GADEST 2011
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
XIV. International Conference on "Gettering and Defect Engineering in Semiconductor Technology"
Presentation at the XIV. International Conference on "Gettering and Defect Engineering in Semiconductor Technology", Loipersdorf (Austria), September 25-30, 2011
Lothar Pfitzner: 450 mm Manufacturing - Synergies and Benefits for Smaller Diameters
Since more than 4 years, the pros and cons of manufacturing developments of 450 mm silicon technology is in discussion. Meanwhile the planning phase for pilot lines and introduction of high volume manufacturing is agreed between materials suppliers, equipment industry and the device manufacturers. Basic specifications, urgent necessary standards, time lines and task distributions are discussed and detailed. In that respect, details on the state-of-the-art and future needs of silicon materials, equipment and manufacturing of the 450 mm generation will be given. An optimum re-use of advances by 450 mm developments and their transfer back into 300 mm and even 200 mm technologies will guarantee synergies and benefits for smaller diameters. Thus, not only the 450 mm technology will become a success story, but also the next generation of 300 mm fabs and of More-Than-Moore fabs will have strong benefits.

