Project Summary:
Technology-computer-aided design (TCAD) is an indispensable tool for development and optimization of new generations of electronic devices in industrial environments. It was estimated in the International Technology Roadmap for Semiconductors that TCAD reduces technology development costs by 35% with a tendency to rise. However, to continue to be that useful for the 32 nm technology node and beyond, the capabilities of TCAD have to follow the paradigm shifts to processes and materials considered for such nanodevices.
The objective of this project is to extend the capabilities of TCAD to the materials and doping processes used at the 32 nm node and beyond. In particular, quantitative models for the deactivation and activation mechanisms for dopants in silicon will be developed which are suited for the low ion implantation energies and low-temperature or millisecond-annealing strategies of future nanodevices. These models will be able to predict the effects of point-defect engineering and, for boron, the influence of fluorine. For strained and unstrained silicon-germanium alloys, strained silicon, and silicon-on-insulator materials, models will be developed for the evolution of extended defects and for the activation, segregation, and diffusion of dopants. Special test structures will also be used to investigate a possible diffusion anisotropy in isolated semiconductor layers. The models developed will be implemented and integrated into Sentaurus Process to be of immediate value to the semiconductor industry and validated with respect to their needs.
To reach these ambitious goals, the consortium consists of companies active in complementary fields of competence (STM-France: device manufacturing, Mattson: equipment production, Synopsys: TCAD software, CSMA: characterization) in addition to three leading European research institutes (Fraunhofer-IISB, Univ. Newcastle, CNRS-LAAS/CEMES) with extensive experience in modeling and simulation.
Fact Sheet on CORDIS:
A fact sheet about the ATOMICS project is hosted at the CORDIS site.
Keywords:
Integrated Circuits, Process Simulation, Ion Implantation, Diffusion, Transient Diffusion, Activation, Extended Defects
Project Presentation:
The Project
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