We investigate diffusion processes, as encountered in semiconductor technology, both theoretically and experimentally. Our aim is to improve process characterization and optimization by simulation. We develop models and determine the parameters required for process simulation. Our research activities include the investigation of diffusion in multilayer structures, of the electrical activation of dopant atoms, measurements of vacancy concentrations in silicon wafers using platinum diffusion and DLTS, and theoretical work on diffusion mechanisms.

We work on the development and application of simulation programs that predict dopant concentrations resulting from implantation steps. Furthermore, we simulate electrical properties of devices: We can calculate how modifications in the technology procedure affect device behavior and how to optimize processes. As we can rely on our comprehensive experience with the application of such simulators, we are able to tackle your problems and questions effectively.

Product Sheet Doping Simulation

IST Project FRENDTECH "Front-End Models for Silicon Future Technology" (completed)

IST Project ATOMICS "Advanced Front-End Technology Modeling for Ultimate Integrated Circuits"

Alternative Source/Drain Contact Pad Architectures for Contact Resistance Improvement in Decanano-Scaled Devices

Pre-Silicon SPICE Modeling of Nano-Scaled SOI MOSFETs

We work on the development and application of simulation programs for topography steps (etching, deposition, chemical-mechanical polishing) as used in semiconductor technology. This includes physical and chemical modeling on device scale as well as on equipment scale (e.g. deposition furnaces, etch reactors). We integrate our software tools with other process simulation programs as well as with tools for electrical simulation.

Presentation Topography Simulation

Product Sheet Topography Simulation

Publications

Simulation of sputter etching

EU-Projekt MD3 (Material Development for Double exposure and Double patterning)

• Rigorous simulation of light diffraction from advanced masks, including defect-free and defective EUV-masks.
• Modeling of modern chemical amplified resists, including model calibration by local and global optimizers.
• Evaluation and optimization of lithographic imaging, mask and source optimization using genetic algorithms.

Product Sheet Lithography Simulation, Dr.LiTHO

Further information about our activities

EU-Projekt MD3 (Material Development for Double exposure and Double patterning)