Epitaxy and Layer Deposition

Fraunhofer Institute for Integrated Systems and Device Technology

Development of epitaxial and bulk crystal growth processes

Compared to conventional silicon-based devices, power electronic devices out of silicon carbide (SiC) and gallium nitride (GaN) possess a high potential to increase the energy efficiency. Yet, the production of these materials is still difficult and related with several crystal defects, which have a negative effect on performance and reliability of devices out of these materials.

We analyze how to avoid these damaging crystal defects, which can reach the material during the epitaxy or from the substrate.

In the area of detectors and optical materials for high energy physics, earth exploration, safety and medicine technology, there is a high demand for new materials for generation and detection of high-energy radiation. Based on our experience in the breeding of optical crystals, we have started to develop the technological basis for the production of special detector and laser crystals, to be able to rate the market potential of these new materials and the new manufacturing methods.