E-MRS Spring Meeting 2023

May 29 - June 2, 2023
Strasbourg, France

Key researchers from the project MUNDFAB, which is coordinated by Fraunhofer IISB, are co-organizing the symposium.

Historically, the development of novel materials has played a crucial role in the progress of the semiconductor industry. For instance, the improvement of nanoelectronics logic devices has heavily relied on the integration of high-mobility SiGe alloys, strained silicon substrates, low contact-resistance silicides, new high-k and metal gates, etc. Similarly, wide-bandgap semiconductors such as SiC and GaN have been introduced for the development of new highly efficient power devices.

Today, PPAC (Power Performance Area Cost) scaling and 3D integration issues drive the continuous advancement of logic devices, whereas significant progress in the fabrication of wide-bandgap materials is still required for the enhancement of the transport properties or for the improved thermal management of future power devices. In this context, the broad panel of materials currently utilized in the semiconductor industry must be further explored and optimized, while newer materials for future applications (new materials for beyond-CMOS devices or alternative wide-bandgap semiconductors) are likely to be introduced.

The symposium therefore aims to bring together materials scientists and engineers from both academic and industrial environments to discuss the latest developments in the field of semiconductor materials and related compounds for future semiconductor devices, with a focus on both the scientific and technological aspects of the fabrication, processing, characterization and applications of these materials.

Topics of the symposium include but are not restricted to:

• Substrate fabrication
• Nanostructured and new materials for future devices
• Dopant and contact engineering
• Selective and low thermal budget processes
• Surfaces and interfaces
• Metrology and characterization
• Integration issues
  
• Applications in advanced devices
• Modeling and simulation of material properties and processing (from ab-initio to continuum TCAD)