ICSCRM 2023

The International Conference on Silicon Carbide and Related Materials (ICSCRM) is the most important technical conference series on silicon carbide (SiC) and related materials. Since the first meeting held in Washington DC in 1987, the ICSCRM has become the premiere international forum in this field with an annual attendance of about 800 physicists, engineers, scientists, and students. The conference serves as a platform for the exchange of ideas on the latest scientific and technical issues among researchers and engineers in industrial, academic, and public sectors. Besides the scientific sessions, the ICSCRM also comprises an exhibition which is open for the entire duration of the conference.

ICSCRM 2023 Homepage

Visit Fraunhofer IISB at the exhibition (booth 48) and learn about our latest research results in the presentations.

We are looking forward to meeting you at ICSCRM 2023!

In the scientific sessions, the following presentations report on research results of Fraunhofer IISB (the session code allows you to easily find the presentation in the detailed conference program):
 

Lift-off process for patterning of sputter-deposited thick metal stacks suitable for high temperature applications on 4H-SiC
Alesa Fuchs, Kevin Brueckner and Oleg Rusch (Session 10B)

Fast estimation of the lateral fidelity of ion implantation in 4H-SiC through calibration to JFET transfer characteristics in TCAD
Kota Sakai, Norman Boettcher, Susanne Beuer and Mathias Rommel (Session 10B)

Device modeling of 4H-SiC pin-photodiodes with shallow implanted Al-emitters for VUV sensor applications
Michael Schraml, Mathias Rommel, Niklas Papathanasiou and Tobias Erlbacher (Session 11)

Analysis of dislocation directions by x-ray topography as a tool to understand thermal stress during SiC crystal growth
Paul Wimmer, Christian Kranert, Roland Weingärtner, Christian Reimann and Jochen Friedrich (Session 17D)

Systematic evaluation of contamination behavior originated from innovative spray coated tantalum carbide coating on graphite parts used in SiC epitaxy processes in comparison to conventional CVD coated ones
Kevin Schuck-Buehner, Lukas Friedel, Michael Lang, Christian Reimann, Jochen Friedrich, Dirk Mützenich and Torsten Kornmeyer (Session 21B)

Empirical model of backside low-ohmic nickel contact formation on n-type 4H-SiC
Carsten Hellinger, Mathias Rommel and Anton J. Bauer (Session 21C)

Laser annealing induced formation of low-ohmic nickel contacts on n-type 4H-SiC by surface roughness dependent laser fluence optimization
Carsten Hellinger, Mathias Rommel and Anton J. Bauer (Session 21C)

Comparison of novel charge-based wafer inspection technique to optical defect mapping techniques
Robin Karhu, Kevin Albrecht, Gennadi Polisski, Marshall Wilson and Birgit Kallinger (Session 21D)

On the relationship of epitaxial defects and processing parameters to yield and reliability of gate oxides on 4H-SiC
Holger Schlichting, Tom Becker, Tobias Erlbacher, Leander Baier, Matthias Kocher and Mathias Rommel (Session 21D)

Analytical modeling of conduction, blocking and breakdown operation of a monolithically integrated 4H-SiC circuit breaker device technology
Norman Boettcher and Tobias Erlbacher (Session 25B)

Plasma treatment after NiSi-based ohmic contact formation on 4H-SiC to enhance adhesion of subsequent backside metallization
Tom Becker, Carsten Hellinger, Alesa Fuchs, Oleg Rusch and Julien Koerfer (Session 25C)

Long term reliability and deterioration mechanisms of high temperature metal stacks on 4H-SiC
Kevin Brueckner and Oleg Rusch (Session 25C)

Optimization of reflectance spectroscopy for transparent layers on 4H-SiC
Julien Koerfer, Mathias Rommel, Alesa Fuchs and Oleg Rusch (Session 25C)

Temperature dependence of gate oxide breakdown and C-V properties on 4H-SiC between room temperature and 500 °C
Alexander May, Leander Baier and Mathias Rommel (Session 25C)

Increasing 4H-SiC trench depth by improving the dry-etch selectivity towards the oxide hard mask
Oleg Rusch, Kevin Brueckner and Tobias Erlbacher (Session 25C)

Systematic tracking of defects from substrate to final device by full wafer mapping techniques
Tom Birkoben, Firas Faisal, Nils Steller, Christian Kranert, Robin Karhu, Birgit Kallinger, Stephan Müller and Sönke Habenicht (Session 25D)