The AlN crystals were also refined in our institute’s crystal laboratory into so-called “epi-ready” wafers with a diameter of 2 inches (50 mm) and then delivered to our research partners for further processing. 

Thanks to the dedication of our colleagues, the IISB is now the first research institution in Europe capable of producing AlN semiconductor substrates of this size and quality.

As an ultra-wide bandgap (UWBG) semiconductor material for next-generation power electronic devices, aluminum nitride is of strategic interest for Europe’s technological independence and resilience.

The availability of such semiconductor materials is key for the commercialization and widespread use of UWBG devices in power electronics.

Congratulations to Sven, Martin, Adnan and Gleb on this outstanding achievement and remarkable teamwork!