Bauelemente

Anwendungsspezifische Lösungen für Bauelemente und Dienstleistungen

Im Bereich Bauelemente  entstehen innovative Bauelemente mit starkem Schwerpunkt auf der Energieelektronik. Neuartige Bauelementkonzepte aufHalbleitermaterialien wie Silizium, Siliziumkarbid und ähnlichen eröffnen Wege für neue und leistungsfähigere Anwendungen. Darüber hinaus werden kundenspezifische Bauelemente, die auf herkömmlichen Konzepten basieren, weiterentwickelt, um besser die individuellen Ansprüche zu erfüllen („application-pull“). Hier liegt der Fokus liegt auf der Entwicklung von kostengünstigen Prozessen für die Realisierung maßgeschneiderter Produkte.

Power device simulation

© Fraunhofer IISB

Implementation of process simulation for prediction of electron device parameters

© Fraunhofer IISB

Implementation of process simulation for prediction of electron device parameters

Verification of novel designs - „more than moore“

  • Process simulation of device structures
  • Definition of process flow from scratch or from existing design
  • Incorporation of custom mask layouts
  • Verification of manufacturability
  • Simulation of extracted device structures
  • Evaluation of electrical performance
  • Calculation of quasistatical behavior
  • Dynamic small-signal analysis
  • Comparison of different design variations
  • Optimization of device design and process flow
  • Shorter development cycles due to smaller feedback loops

Device development

© Fraunhofer IISB

Silicon wafer with monolithically integrated passive networks and test structures

© Fraunhofer IISB

High-voltage capacitors monolithicalls integrated into silicon using deep trench technology

Customized solutions for semiconductor devices

  • Novel and exclusive fabrication capabilities
  • Processing of lightly doped substrates
  • Beyond-CMOS processing
  • Alternative substrate materials, e.g. SOI, SiC, GE
  • Transfer to industrial volume fabrication
  • Process and control plans, FMEAs, SPC
  • Full-fledged device testing and qualification
  • Prototype devices and small volume production at π-Fab
  • Large volume production with foundries and partners in semiconductor industry

Device integration

© Fraunhofer IISB

LDMOS device with reduced R DS,on by combining trench gate technology with planar topology

Application specific integration concepts

  • Silicon carbide power devices
  • Lateral and vertical power MOSFETs
  • Sensoric for harsh environments
  • Passive devices for power electronics
  • High-voltage trench capacitors and temperature-stable resistors
  • Passive devices integrated on single chip
  • Glass capacitors
  • Circuit protection devices
  • Controllable active fuses
  • High-current anti-fuses
  • Solid state circuit breakers
  • Integrated X-ray and UV sensors

Electrical characterization

Performance and reliability characterization

  • Measurement of device performance
  • Forward conduction and blocking behavior of power devices
  • High-voltage capacitors (voltage, temperature and frequency characteristics)
  • Switching properties in non-volatile memories
  • Statistical device reliability predictions considering individual failure mechanisms
  • Gate oxide integrity of transistors and capacitors
  • Retention time and endurance in non-volatile memories
  • Specific device qualification according to standards, e.g. automotive
  • Process evaluation based on yield analysis

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Publications