I. Abid, R. Kabouche, F. Medjdoub, S. Besendörfer, E. Meissner, J. Derluyn, S. Degroote, M. Germain, H. Miyake: Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructureProceedings of the International Symposium on Power Semiconductor Devices and Ics, Vol 2020, Art. No. 9170170, Vienna, Austria, September 13, 2020 - September 18, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 310-312 |
M. Albrecht, F. J. Klüpfel, T. Erlbacher: An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETsIEEE Transactions on Electron Devices, Vol 67 (3), Art. No. 8982172 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 855-862 |
M. Albrecht, D. Pérez, R. C. Martens, A. J. Bauer, T. Erlbacher: Impact of channel implantation on a 4H-SiC CMOS operational amplifier for high temperature applicationsMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 1123-1128 |
M. Angerer, R. Schwanninger, M. März: Active common-mode filter for capacitive-coupled isolated signalingElectronics Letters, Vol 56 (2) (Institution of Engineering and Technology (IET), London, 2020) pp. 73-76 |
C. F. Bayer, S. Wagner: Robust converters for renewable energy plantsMikroelektronik Nachrichten (80), 2020 (Fraunhofer-Verbund Mikroelektronik, Berlin, 2020) p. 10 |
C. F. Bayer: Robuster Umrichter für Erneuerbare EnergienMikroelektronik Nachrichten (80), 2020 (Fraunhofer-Verbund Mikroelektronik, Berlin, 2020) p. 12 |
B. Bayer, M. Groccia, H. L. Bach, C. F. Bayer, A. Schletz, C. Lenz, S. Ziesche: LTCC Embedding of SiC Power Devices for High Temperature Applications over 400 °CProceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020, Art. No. 9229859, Tønsberg, Norway, September 15, 2020 - September 18, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) p. 5 |
I. Bejenari, A. Burenkov, P. Pichler, I. Deretzis, A. La Magna: Molecular dynamics modeling of the radial heat transfer from silicon nanowiresInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Art. No. 9241646, Kobe, Japan, September 03, 2020 - October 06, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 67-70 |
S. Besendörfer, E. Meissner, T. Zweipfennig, H. Yacoub, D. Fahle, H. Behmenburg, H. Kalisch, A. Vescan, J. Friedrich, T. Erlbacher: Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structuresAIP Advances, Vol 10 (4), Art. No. 45028 (American Institute of Physics Inc. (AIP Publishing), Melville, 2020) |
S. Besendörfer, E. Meissner, A. Tajalli, M. Meneghini, J. A. Jr. Freitas, J. Derluyn, F. Medjdoub, G. Meneghesso, J. Friedrich, T. Erlbacher: Vertical breakdown of GaN on Si due to V-pitsJournal of Applied Physics, Vol 127 (1), Art. No. 15701 (American Institute of Physics Inc. (AIP Publishing), Melville, 2020) |
S. Besendörfer, E. Meissner, F. Medjdoub, J. Derluyn, J. Friedrich, T. Erlbacher: The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistorsScientific Reports, Vol 10 (1), Art. No. 17252 (Springer Nature, Berlin, 2020) |
K. Dadzis, R. Menzel, U. Juda, K. Irmscher, C. Kranert, M. Müller, M. Ehrl, R. Weingärtner, C. Reimann, N. Abrosimov, H. Riemann: Characterization of Silicon Crystals Grown from Melt in a Granulate CrucibleJournal of Electronic Materials, Vol 49 (9) (Springer Nature, Berlin, 2020) pp. 5120-5132 |
L. Di Benedetto, G. D. Licciardo, T. Erlbacher, A. J. Bauer, A. Rubino: A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential BarrierIEEE Transactions on Electron Devices, Vol 67 (1), Art. No. 8913626 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 154-159 |
H. Du, S. A. Letz, N. Baker, T. Götz, F. Iannuzzo, A. Schletz: Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysisMicroelectronics Reliability, Vol 114, Art. No. 113784 (Elsevier, Amsterdam, 2020) |
A. Erdmann, H. S. Mesilhy, P. Evanschitzky, V. Philipsen, F. J. Timmermans, M. Bauer: Perspectives and tradeoffs of absorber materials for high NA EUV lithographyJournal of Micro/ Nanolithography, MEMS, and MOEMS, Vol 19 (4), Art. No. 41001 (Society of Photo-Optical Instrumentation Engineers (SPIE), Bellingham, 2020) |
T. Erlbacher, M. Kocher, H. Schlichtig, J. Weiße, A. J. Bauer: Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS TransistorsMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2029 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 843-849 |
T. Erlbacher, T. Śledziewski: SiC MOSFET with a Self-Aligned Channel Defined by Shallow Source-JFET Implantation: A Simulation StudyMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 850-855 |
S. Faraji, E. Meissner, R. Weingärtner, S. Besendörfer, J. Friedrich: In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystalCrystals, Vol10 (12), Art. No. 1100 (Multidisciplinary Digital Publishing Institute (MDPI), Basel, 2020) pp. 1-11 |
J. Friedrich, G. Müller: Erlangen—An Important Center of Crystal Growth and Epitaxy: Major Scientific Results and Technological Solutions of the Last Four DecadesCrystal Research and Technology, Vol 55 (2), Art. No. 1900053 (Wiley-VCH Verlag, Hoboken, 2020) |
M. Gepp, V. R. H. Lorentz, M. März, F. Geffray, E. Guyon, F. Chopard: Spatial and Temporal Temperature Homogenization in an Automotive Lithium-Ion Pouch Cell Battery ModuleELECTRIMACS 2019, Lecture Notes in electrical Engineering, Vol 604 LNEE (Proceedings of 1st European Advances in Digital Transformation Conference, EADTC 2018 and the 2nd European Advances in Digital Transformation Conference, EADTC 2019), Salerno, Italy, April 04, 2019 (Springer Nature, Berlin, 2020) pp. 625-639 |
M. Gerwig, A. S. Ali, D. Neubert, S. Polster, U. Böhme, G. Franze, M. Rosenkranz, A. Popov, I. Ponomarev, M. P. M. Jank, C. Viehweger, E. Brendler, L. Frey, P. Kroll, E. Kroke: From Cyclopentasilane to Thin-Film TransistorsAdvanced Electronic Materials (Wiley-VCH Verlag, Hoboken, 2020) |
A. Hauke, S. Oertel, L. Knoke, V. Fein, C. Maier, F. Brinkmann, M. P. M. Jank: Screen-Printed Sensor for Low-Cost Chloride Analysis in Sweat for Rapid Diagnosis and Monitoring of Cystic FibrosisBiosensors, Vol 10 (9), Art. No. 123 (Multidisciplinary Digital Publishing Institute (MDPI), Basel, 2020) p. 8 |
C. Hellinger, O. Rusch, M. Rommel, A. J. Bauer, T. Erlbacher: Low-resistance ohmic contact formation by laser annealing of n-implanted 4H-SiCMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 850-855 |
S. Hessler, S. Knopf, M. Rommel, M. Girschofsky, B. Schmauss, R. Hellmann: Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayersOptical Letters, Vol 45 (19) (OSA - The Optical Society, Washington D.C., 2020) pp. 5510-5513 |
A. Hirsch, M. Trempa, I. Kupka, L. Schmidtner, C. Kranert, C. Reimann, J. Friedrich: Investigation of gas bubble growth in fused silica crucibles for silicon Czochralski crystal growthJournal of Crystal Growth, Vol 533, Art. No. 125470 (Elsevier, Amsterdam, 2020) |
T. Hutsch, R. W. Doncker, A. Neumann, T. Zetterer, G. Mitic, K. Kriegel, A. Burghardt, A. Sewergin, M. Rittner, F. B. Simon: Highly Integrated Switching Cell Design based on Copper Diamond Heat Spreader, 3D Printed Heat Sink and HTCC Logic BoardCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems. Proceedings, Berlin, Germany, March 24, 2020 - March 26, 2020 (VDE Verlag, Berlin, 2020) pp. 397-402 |
A. Hutzler, B. Fritsch, C. D. Matthus, M. P. M. Jank, M. Rommel: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopyScientific Reports, Vol 10 (1), Art. No. 13676 (Springer Nature, Berlin, 2020) |
M. Kocher, H. Schlichting, B. Kallinger, M. Rommel, A. J. Bauer, T. Erlbacher: Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mappingMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 299-305 |
C. Lange, A. Rueß, A. Nuß, R. Öchsner, M. März: Dimensioning battery energy storage systems for peak shaving based on a real-time control algorithmApplied Energy, Vol 280, Art. No. 115993, December 15, 2020 (Elsevier, Amsterdam, 2020) |
C. Lenz, S. Ziesche, A. Schletz, H. L. Bach, T. Erlbacher: Real embedding process of SiC devices in a monolithic ceramic package using LTCC technologyProceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020, Art. No. 9229653, Tønsberg, Norway, September 15, 2020 - September 18, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) p. 5 |
M. Lim, T. Śledziewski, M. Rommel, T. Erlbacher, H. K. Kim, S. J. Kim, H. K. Shin, A. J. Bauer: Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiCMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 535-540 |
M. Lim, A. J. Bauer, M. Rommel, T. Erlbacher, H. Shin, H. Kim, S. Kim, T. Śledziewski: Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiCMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 535-540 |
S. Liu, X. Cheng, L. Zheng, T. Śledziewski, T. Erlbacher, L. Sheng, Y. Yu: Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFETSolid-State Electronics, Vol 171, Art. No. 107873 (Elsevier, Amsterdam, 2020) |
G. Lukin, E. Meissner, J. Friedrich, F. Habel, G. Leibiger: Stress evolution in thick GaN layers grown by HVPEJournal of Crystal Growth, Vol 550, Art. No. 125887 (Elsevier, Amsterdam, 2020) |
P. J. Martínez, S. A. Letz, E. Maset, D. Zhao: Failure analysis of normally-off GaN HEMTs under avalanche conditionsSemiconductor Science and Technology, Vol 35 (3), Art. No. 35007 (Institute of Physics Publishing (IOP), Bristol, 2020) |
M. März, Z. Yu, S. A. Letz, D. Zhao, A. Schletz: Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling testESREF 2020, the 31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Art. No. 113785, Virtual, Online, October 05, 2020 - October 08, 2020 (Elsevier, Amsterdam, 2020) |
M. März, S. Letz, D. Zhao, A. Schletz: A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under Thermal Cycling TestCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems. Proceedings, Berlin, Germany, March 24, 2020 - March 26, 2020 (VDE Verlag, Berlin, 2020) pp. 490-495 |
M. März, C. F. Bayer, M. Jank, Z. Yu, A. Zoerner, V. Zimmermann, A. Schletz: Integration of Printed Electronics in Potted Power Electronic ModulesCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems. Proceedings, Berlin, Germany, March 24, 2020 - March 26, 2020 (VDE Verlag, Berlin, 2020) pp. 137-141 |
M. März, A. Klische, A. Diepgen, T. Heckel, A. Apelsmeier, M. Schiedermeyer, C. Rettner, D. Dirksen: SiC Power Module with integrated RC-Snubber Design for Voltage Overshoot and Power Loss ReductionCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems. Proceedings, Berlin, Germany, March 24, 2020 - March 26, 2020 (VDE Verlag, Berlin, 2020) pp. 142-147 |
M. März, C. F. Bayer, Z. Yu, W. Zeng, A. Schletz: Application of response surface methodology for optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics PackagingCIPS 2020 - 11th International Conference on Integrated Power Electronics Systems. Proceedings, Berlin, Germany, March 24, 2020 - March 26, 2020 (VDE Verlag, Berlin, 2020) |
T. Menrath, A. Rosskopf, F. B. Simon, M. Groccia, S. Schuster: Shape Optimization of a Pin Fin Heat Sink36th Annual Semiconductor Thermal Measurement, Modeling and Management Symposium, SEMI-THERM 2020 - Proceedings, Art. No. 9142830, San Jose, United States, March 16, 2020 - March 20, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 10-16 |
H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. van Setten, T. Fliervoet, A. Erdmann: Pathfinding the perfect EUV mask: The role of the multilayerProceedings of SPIE - The International Society for Optical Engineering, Vol 11323 (Extreme Ultraviolet (EUV) Lithography XI 2020), Art. No. 1132316, San Jose, United States, February 24, 2020 - February 27, 2020 (Society of Photo-Optical Instrumentation Engineers (SPIE), Bellingham, 2020) |
M. L. Pourteau, A. Gharbi, P. Brianceau, J. A. Dallery, F. Laulagnet, G. Rademaker, R. Tiron, H. J. Engelmann, J. von Borany, K. H. Heinig, M. Rommel, L. Baier: Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integrationMicro and Nano Engineering, Vol 9, Art. No. 100074 (Elsevier, Amsterdam, 2020) |
M. Rommel, Z. Xu, T. Liu, H. Wang, Y. Wang, F. Fang, Y. Song: Depth Profiling of Ion-Implanted 4H-SiC Using Confocal Raman SpectroscopyCrystals Vol 10 (2), Art. No. 131 (Multidisciplinary Digital Publishing Institute (MDPI), Basel, 2020) |
O. Rusch, C. Hellinger, J. Moult, Y. Corcoran, T. Erlbacher: Reducing on-resistance for SiC diodes by thin wafer and laser anneal technologyMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 155-160 |
O. Rusch, C. Hellinger, J. Moult, Y. Corcoran, T. Erlbacher: Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal TechnologyMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 155-160 |
S. Saponara, G. Ciarpi, T. Erlbacher, G. Rattmann: Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 VJournal of Circuits, Systems and Computers, Art. No. 2050039 (World Scientific Publishing Co. Pte Ltd, Singapur, 2020) |
M. Schellenberger, S. Anger, M. Pfeffer, V. Häublein, G. Roeder, A. J. Bauer: Smart Platform for Rapid Prototyping: A First Solution Approach to Improve Time-to-Market and Process Control in Low-Volume Device FabricationELECTRIMACS 2019, Lecture Notes in electrical Engineering, Vol 604 LNEE (Proceedings of 1st European Advances in Digital Transformation Conference, EADTC 2018 and the 2nd European Advances in Digital Transformation Conference, EADTC 2019), Salerno, Italy, April 04, 2019 (Springer Nature, Berlin, 2020) pp. 129-135 |
M. Schellenberger, M. Pfeffer, V. Häublein, G. Roeder, A. Bauer, S. Anger: Smart Platform for Rapid Prototyping: A First Solution Approach to Improve Time-to-Market and Process Control in Low-Volume Device FabricationDigital Transformation in Semiconductor Manufacturing : Proceedings of the 1st and 2nd European Advances in Digital Transformation Conference, EADTC 2018, Zittau, Germany and EADTC 2019, Milan, Italy (Springer Nature Switzerland AG, Cham, 2020) pp. 129-135 |
A. Schletz, W. Grübl, M. Novak, J. Müller: Selektives Ag-Sintern auf Organischer Leiterplatte10. DVS/GMM-Fachtagung EBL (Elektronische Baugruppen und Leiterplatten) 2020, Fellbach, Germany, February 18, 2020 - February 19, 2020 (DVS Media GmbH, Düsseldorf, 2020) pp. 210-215 |
T. Schneider, M. Förste, G. Lukin, P. Fischer, M. Barchuk, C. Schimpf, E. Niederschlag, O. Pätzold, D. Rafaja, M. Stelter: Recent progress of high temperature vapor phase epitaxy for the growth of GaN layers – Controlled coalescence of nucleation layersJournal of Crystal Growth, Vol 533, Art. No. 125465 (Elsevier, Amsterdam, 2020) |
M. Schulz, N. Schleippmann, K. Gosses, B. Wunder, M. März: Four Switch Buck/Boost Converter for DC Microgrid Applications2020 22nd European Conference on Power Electronics and Applications, EPE 2020 ECCE Europe, Art. No. 9215754, Lyon, France, September 07, 2020 - September 11, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) |
M. Schulz, N. Schleippmann, K. Gosses, R. Chacon, B. Wunder: Four switch buck/boost converter to handle bidirectional power flow in DC subgridsPCIM Europe Conference Proceedings, Vol 1 (Proceedings of International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020), Virtual, Online, June 07, 2020 - June 08, 2020 (Mesago PCIM, Frankfurt, 2020) pp. 1764-1771 |
A. Sciuto, I. Deretzis, G. Fisciardo, S. F. Lombardo, A. La Magna, M. G. Grimaldi, K. Huet, B. Lespinasse, A. Verstraete, B. Curvers, I. Bejenari, A. Burenkov, P. Pichler: Advanced simulations on laser annealing: Explosive crystallization and phonon transport correctionsInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Art. No. 9241660, Kobe, Japan, September 03, 2020 - October 06, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 71-74 |
T. Śledziewski, T. Erlbacher: SiC mosfet with a self-aligned channel defined by shallow source-jfet implantation: A simulation studyMaterials Science Forum, Vol 1004 (Proceedings of 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019), Kyoto, Japan, September 29, 2019 - October 04, 2019 (Trans Tech Publications Ltd., Bäch SZ, 2020) pp. 850-855 |
Y. Song, Z. Xu, R. Li, H. Wang, Y. Fan, M. Rommel, J. Liu, G. V. Astakhov, G. Hlawacek, B. Li, J. Xu, F. Fang: Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiCNanomanufacturing and Metrology, Vol 3 (3) (Springer Science and Business Media, Berlin, 2020) pp. 205-217 |
M. L. Stern, M. Schellenberger: Fully convolutional networks for chip-wise defect detection employing photoluminescence images: Efficient quality control in LED manufacturingJournal of Intelligent Manufacturing, Vol 32 (Springer Nature, Berlin, 2020) pp. 113-126 |
T. Stolzke, S. Ehrlich, C. Joffe, M. März: Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1 MHzJournal of Magnetism and Magnetic Materials, Vol 497, Art. No. 166022 (Elsevier, Amsterdam ?, 2020) |
F. Sturm, M. Trempa, S. Schwanke, K. Schuck, C. Kranert, C. Reimann, J. Friedrich: Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV applicationJournal of Crystal Growth, Vol 540, Art. No. 125636 (Elsevier, Amsterdam, 2020) |
A. Tajalli, M. Meneghini, S. Besendörfer, R. Kabouche, I. Abid, R. Püsche, J. Derluyn, S. Degroote, M. Germain, E. Meissner, E. Zanoni, F. Medjdoub, G. Meneghesso: High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applicationsMaterials, Vol 13 (19), Art. No. 2674 (Multidisciplinary Digital Publishing Institute (MDPI), Basel, 2020) |
A. Tajalli, M. Borga, M. Meneghini, C. De Santi, D. Benazzi, S. Besendörfer, R. Püsche, J. Derluyn, S. Degroote, M. Germain, R. Kabouche, I. Abid, E. Meissner, E. Zanoni, F. Medjdoub, G. Meneghesso: Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experimentMicromachines, Vol 11 (1), Art. No. 101 (Multidisciplinary Digital Publishing Institute (MDPI), Basel, 2020) |
M. Trempa, F. Sturm, C. Kranert, S. Schwanke, C. Reimann, J. Friedrich, C. Schenk: Impact of different SiO2 diffusion barrier layers on lifetime distribution in multi-crystalline silicon ingotsJournal of Crystal Growth, Vol 532, Art. No. 125378 (Elsevier, Amsterdam, 2020) |
A. Verani, G. Fieramosca, A. Colicelli, R. Di Rienzo, R. Saletti, R. Roncella, R. Schwarz, V. R. H. Lorentz, F. Baronti: FPGA Accelerator for Battery Management Systems in Safety-Critical ApplicationsProceedings - 2020 2nd IEEE International Conference on Industrial Electronics for Sustainable Energy Systems, IESES 2020, Cagliari, Italy, September 01, 2020 - September 03, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) |
S. Waldhör, S. Bockrath, M. Wenger, R. Schwarz, V. R. H. Lorentz: FoxBMS-free and open bms platform focused on functional safety and AIPCIM Europe Conference Proceedings, Vol 1 (Proceedings of International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020), Virtual, Online, June 07, 2020 - June 08, 2020 (Mesago PCIM, Frankfurt, 2020) pp. 605-610 |
J. Weiße, C. D. Matthus, H. Schlichting, H. Mitlehner, T. Erlbacher: RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiCIEEE Transactions on Electron Devices, Vol 67 (8), Art. No. 9132665 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) pp. 3278-3284 |
T. Wicht, S. Müller, R. Weingärtner, B. Epelbaum, S. Besendörfer, U. Bläß, M. Weisser, T. Unruh, E. Meissner: X-ray characterization of physical-vapor-transport-grown bulk AlN single crystalsJournal of Applied Crystallography, Vol 53 (International Union of Crystallography (IUCr), Chester, 2020) pp. 1080-1086 |
M. Wu, D. Thakare, J. F. de Marneffe, P. Jaenen, L. Souriau, K. Opsomer, J. P. Soulié, A. Erdmann, H. Mesilhy, P. Naujok, M. Foltin, V. Soltwisch, Q. Saadeh, V. Philipsen: Mask absorber for next generation EUV lithographyProceedings of SPIE - The International Society for Optical Engineering, Vol 11517 (Extreme Ultraviolet (EUV) Lithography XI 2020), Art. No. 1151706 (Society of Photo-Optical Instrumentation Engineers (SPIE), Bellingham, 2020) |
Z. Xu, L. Lu, Z. He, D. Tian, A. Hartmeier, J. Zhang, X. Luo, M. Rommel, K. Nordlund, G. Zhang, F. Fang: Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approachesInternational Journal of Advanced Manufacturing Technology, Vol 106 (9-10) (Springer Nature, Berlin, 2020) pp. 3896-3880 |
Z. Yu, W. Zeng, D. Zhao, Z. Zhang, C. F. Bayer, A. Schletz, M. März: Reliability of silver direct bonding in thermal cycling testsProceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020, Art. No. 9229753, Tønsberg, Norway, September 15, 2020 - September 18, 2020 (Institute of Electrical and Electronics Engineers Inc. (IEEE), Piscataway Township, 2020) p. 6 |
S. Zeltner, B. Seliger, D. Haager, B. Eckardt, H. L. Bach, Z. Yu, S. Vater, C. F. Bayer, A. Schletz, H. Umeda, T. Morita: Advantages and challenges of using SiC mosfets in a high power density insulated HV/LV DC/DC converterPCIM Europe Conference Proceedings, Vol 1 (Proceedings of International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2020), Virtual, Online, June 07, 2020 - June 08, 2020 (Mesago PCIM, Frankfurt, 2020) pp. 1587-1592 |