Conference  /  October 24, 2021  -  October 28, 2021


The 13th European Conference on Silicon Carbide and Related Materials (ECSCRM 2020·2021) will be held at the Vinci International Convention Centre (Palais des congrès), from October, Sunday 24th to Thursday 28th, 2021, proudly hosted by the University of Tours.

ECSCRM is a biannual scientific event that explores, presents and discusses the new achievements in the field of wide-bandgap semiconductors focusing on silicon carbide (SiC) and other wide bandgap semiconductors. The topics covered in the ECSCRM include fundamentals (theoretical and experimental), bulk and epitaxial growth, new materials grown on SiC, material characterization, surfaces and interfaces, device fabrication processes, devices and device physics, packaging, applications, reliability and power related materials.

ECSCRM Homepage


We are looking forward to meeting you at ECSCRM!

Visit us at the exhibition.

In the scientific sessions, the following presentations report on research results of Fraunhofer IISB (the session code allows you to easily find the presentation in the detailed conference program):

Mo-IP-03, K.L. Mletsching et al.
Aluminum activation in 4H-SiC measured on laterally contacted MOS capacitors with a buried current-spreading layer

Tu-2B-03, D. Baierhofer et al.
Defect reduction in epilayers for SiC trench MOSFETs by enhanced epitaxial growth

Tu-P-05, M. Lim et al.
Process-based modeling of 4H-SiC double-trench MOSFETs with reshaped trench geometries

Tu-P-21, J. Förthner et al.
Optimization of photon collection efficiency from single silicon vacancy-center in 4H silicon carbide through lens structures

Tu-P-33, B. Kalllinger et al.
Doping-related photoluminescence spectroscopy

Tu-P-37, C. Gobert et al.
Writing structures in 4H-SiC and diamond for quantum technological applications with nanometer precision using a He/Ne ion microscope

Tu-P-61, A. May et al.
Via size-dependent properties of TiAl ohmic contacts on 4H-SiC

We-P-26, A.B. Renz et al.
A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of germanium and vanadium

We-P-56, S.K. Parthasarathy et al.
Environmental effects on the coherence time of VSi color centers in 4H-SiC

We-P-64, C. Kranert et al.
Non-destructive, cost-efficient, and fast full wafer defect quantification for SiC by X-ray topography

We-P-71, H. Schlichting et al.
The influence of extended defects in 4H-SiC epitaxial layers on gate oxide performance and reliability