Kolloquium  /  November 15, 2021, 17.15 h

Colloquium on Semiconductor Technology and Metrology
Speeding up SiC Device Commercialization: SiC Substrate Technologies towards Reliable Power Devices

November 15, 2021, 17:15 h, online

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Despite extensive efforts in diameter scaling, cost of 4H-SiC substrates remains a barrier for fast adoption of superior SiC device performance in power electronics. A key cost driver is the high effort associated with the crystal growth process. Therefore, technologies aiming at both reduction of fabrication cost per wafer and improvements in material performance are attracting attention. Here, novel approaches towards suitable wafer material modifications will be discussed and presented. The presentations focus on technology and reliability, respectively.

Enabling the Best of SiC Material for Massive Adoption of Electric Vehicles

Ionut Radu, SOITEC, France

Reliability of SiC Semiconductor Devices: Reliability Results, Sample Preparation and Power Cycling Setup
Jürgen Leib, Fraunhofer IISB, Germany