Conference  /  December 12, 2023  -  December 13, 2023, (Dec. 12 | 16:00 h - Dec. 13 | 17:00 h)

"Bodo’s Wide Bandgap Event" – Conference on Research and Application for SiC and GaN

The event will bring together researchers and industry experts from around the world to discuss the potential of wide bandgap power semiconductors. The conference serves as a pivotal platform for knowledge exchange, collaboration, and discovery in this rapidly evolving field.

On the first day, there will be a keynote session with a round table for discussing - with guests from top technology leaders - the hurdles that were to overcome on the road to WBG materials adoption today, and the challenges that are still seen on the horizon. The round table will be followed by a come-together, that gives you the opportunity to meet new people and maintain existing relationships.

The second day will contain two parallel scientific sessions, one for SiC and one for GaN. In addition to the sessions, there will be a tabletop exhibition in the foyer, where you can get up-to-date information and learn about the latest products and services firsthand.

As part of the program, Nico Schmied and Dr. Stefan Matlok from Fraunhofer IISB will deliver the following presentations:

Implementing the ZOS Effect in Real Power Electronics
Nico Schmied

The ZOS Effect – Unveil Full Performance of Unlimited Fast Semiconductor Devices
Dr. Stefan Matlok

Research results from Fraunhofer IISB on the zero overvoltage switching (ZOS) phenomenon have been published in an IEEE Access paper.

We are looking forward to meeting you at the conference!

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