Prototype device fabrication

Development of application-specific devices for our customers also demands manufacturing capabilities to turn device concepts into products. Different options for achieving this return-of-investment are available.


Device development conducted at our institute can be transferred into a small-volume manufacturing process by ISO 9001 certified “π-Fab”. π-Fab is a joint collaboration between the Fraunhofer IISB and the Chair of Electron Devices dedicated to the realization of prototype devices under an industry-compatible fabrication environment. Fabrication ranges from single process steps across process modules up to full-fledged device fabrication including Statistical Process Control and Process Control Measurements on calibrated measurement tools. Additionally, electrical characterization for 100% device testing is available. These activities allow for the first phase of a product ramp-up when fabrication capacities by foundries – due to non-standard CMOS technology requirements – or the global players in power device fabrication are not yet available due to the low production values. Read more about π-Fab here.

SiC- and Si-Foundy services

For larger device volumes, we are working together with partners in industry that provide silicon and SiC CMOS production capabilities. A thorough process transfer ensures that the properties of the developed devices meet your expectations. Choice of partner and technology strongly depends on the individual product and has to be discussed on an individual basis. Nevertheless, silicon and silicon carbide device development at Fraunhofer IISB is guided by the aspect of manufacturability in a large volume environment as a viable “exit strategy” for our customers.

Process and device optimization

We are also offering R&D on process and device optimization for your existing device technology. For example, this includes process transfer from university-like fabrication capabilities to larger wafer diameters or volumes. By transferring a 100mm technology to 150mm, a significant improve in yield and performance can be achieved. Moreover, production costs per chip are reduced. Similar considerations hold true when going from 150mm to 200mm.


High-Q SI-Embedded 3D Inductors


Ion Implanted SiC UV-Photodiodes