Projects & Publications

Erlbacher, T.

SiC Power MOS technology evolution. Sustainable and efficient energy conversion in DC grids; Presentation held at SEMICON Europa 2021, Munich, November 19th, 2021

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Böttcher, N.; Erlbacher, T.

A Monolithically Integrated SiC Circuit Breaker; IEEE Electron Device Letters 42 (2021), Nr.10, S.1516-1519; ISSN: 0741-3106

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Romjin, J.; Vollebregt, S.; Middelburg, L.M.; El Mansouri, B.; Zeijl, H.W. van; May, A.; Erlbacher, T.; Zhang, G.; Sarro, P.M.

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology; IEEE transactions on electron devices (2021), Online First, 7 S., ISSN: 0018-9383

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Lim, M.; Kim, S.; Rusch, O.; Kang, M.-J.; Lee, N.-S.; Shin, H.-K.; Erlbacher, T.; Bauer, A.

Frabrication and Evaluation of 4H-SiC Double Trench MOSFETs on 6-inch Wafer; Presentation held at ICAE 2021, 6th International Conference on Advanced Electromaterials, Hybrid Conference, November 9-12, 2021, Jeju, Korea

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Lim, M.; Rusch, O.; Erlbacher, T.; Bauer, A.

Device Design and Process Integration of SiC Trench MOSFETs; Presentation held at 5th International Symposium on SiC Materials and Devices 2021, November 25, 2021, Busan, Korea

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Becker, T.; Matlok, S.; Heckel, T.; Böttcher, N.; Leib, J.; Erlbacher, T.

Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors, Presentation held at ECPE Online Workshop: Capacitors in Power Electronics, 20.-21.04.2021

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Erlbacher, T.

SiC for Power Electronics and More - 150mm and 200mm Technologies on the Move; Presentation held at SEMICON Technology Week 2021, Online-Event, 23.03.2021

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Böttcher, N.; Erlbacher, T.

Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker, Institute of Electrical and Electronics Engineers -IEEE-:IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 : Virtual Conference, September 23-25, 2020

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Erlekampf, J.; Rommel, M.; Rosshirt-Lilla, K.; Kallinger, B.; Berwian, P.; Friedrich, J.; Erlbacher, T.

Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects, Journal of Crystal Growth 560-561 (2021), Art. 126033

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Erlbacher, T.

Beyond SIC Power Devices and Technology - Novel High Temperature SIC CMOS 1 Micron Technology, Presentation held at 4th International Symposium on SiC Materials and Devices 2020, 26.11.2020, Busan, Republic of Korea

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Besendörfer, S.; Meissner, E.; Medjoub, F.; Derluyn, J.; Friedrich, J.; Erlbacher, T.

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors; Scientific Reports 10 (2020), Art. 17252, 12 S.

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Weiße, J.; Matthus, C.; Schlichting, H.; Mitlehner, H.; Erlbacher, T.

RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC,  IEEE Transactions on Electron Devices ( Volume: 67 , Issue: 8 , Aug. 2020 )

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Liu, S.; Cheng, X.; Zheng, L.; Sledziewski, T.; Erlbacher, T.; Yu, Y.

Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET; Zeitschriftenaufsatz Solid-State Electronics 171 (2020), Art. 107873

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Albrecht, M.; Klüpfel, F.J.; Erlbacher, T. 

An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETs, Zeitschriftenaufsatz, IEEE transactions on electron devices 67 (2020), Nr., S.855-862, ISSN: 0018-9383

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Besendörfer, S.; Meissner, E.; Zweipfennig, T.; Yacoub, H; Fahle, D:, Behmenburg, H.; Kalisch, H.; Vascan, A.; Friedrich, J.; Erlbacher, T. 

Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures; Zeitschriftenaufsatz, AIP Advances 10 (2020), Nr.4, Art. 045028, 7 S., ISSN: 2158-3226

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Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.Jr.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.

Vertical breakdown of GaN on Si due to V-pits, Journal of applied physics 127 (2020), Nr.1, Art. 015701, 10 S.

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Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A. 

A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier, IEEE transactions on electron devices 67 (2020), Nr.1, S.154-159

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Ni, W.; Erlbacher, T.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q., Schlichting, H. 

Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure, Institute of Electrical and Electronics Engineers -IEEE-: 16th China International Forum on Solid State Lighting and International Forum on Wide Bandgap Semiconductors China, SSLChina & IFWS 2019. Proceedings : 25-27 November 2019, Shenzhen, China

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Lim, M.; Sledziewski, T.; Rommel, M.; Erlbacher, T., Kim, H.-K.; Kim, S.; Shin H.-K.; Bauer A.J.

Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC; Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Sledziewski, T.; Erlbacher, T.

SiC MOSFET with a self-aligned channel defined by shallow source-JFET implantation: A simulation study; Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Rusch, O.; Hellinger, C:; Moult, J.; Corcoran, Y.; Erlbacher, T.

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology; Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Albrecht, M.; Perez, D.; Martens R.C.; Bauer A.J.; Erlbacher, T.

Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications; 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 : Kyoto, Japan, September 29 to October 4, 2019

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Schlichting, H.; Kocher, M.; Weisse, J.; Erlbacher, T.; Bauer, A.J.

Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors; Poster presented at 18th International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Hellinger, C.; Rusch, O.; Rommel, M.; Bauer, A.J.; Erlbacher, T.

Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC; Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Kocher, M.; Schlichting, H.; Kallinger, B.; Rommel, M.; Bauer, A.J.; Erlbacher, T.

Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning; Poster presented at 18th International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

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Abbasi, A.; Mantooth, A.; Roy, S.; Murphree, R.; Rashid, A.-U.; Hossain, M.M.; Lai, P.; Fraley, J.; Erlbacher, T.; Chen, Z. 

Characterization of a silicon carbide BCD process for 300°C circuits, Workshop on Wide Bandgap Power Devices and Applications (WiPDA) <7, 2019, Raleigh/NC>

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Ni, W.; Wang, X.; Feng, C.; Xiao, H.; Jiang, L.; Li, W.; Wang, Q.; Li, M.; Schlichting, H.; Erlbacher, T.

Design and fabrication of 4h-Sic Mosfets with optimized JFET and p-body design; Materials for Electronics : Selected peer-reviewed papers from the Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM 2019), July 17-20, 2019, Beijing, China

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Köck, A.; Wimmer-Teubenbacher, R.; Sosada-Ludwikovska, F.; Rohracher, K.; Wachmann, E.; Herold, M.; Welden, T. an ; Kim, J.M.; Ali, Z.; Poenninger, A.; Stahl-Offergeld, M.; Hohe, H.-P.; Lorenz, J.; Erlbacher, T.; Dolmans, G.; Offermans, P.; Vandecasteele, M.; Yurchenko, O.; Sicard, O. von; Pohle, R.; Udrea, F.; Falco, C.; Flandre, D.; Bol, D.; Comini, E.; Zappa, D.; Gardner, J.; Cole, M.; Theunis, J.; Peters, J.; Baldwin, A.

3D-Integrated Multi-Sensor Demonstrator System for Environmental Monitoring, 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII, TRANSDUCERS & EUROSENSORS 2019 : 23-27 June 2019, Berlin, Germany

Ni, W.; Wang, X.; Xiao, H.; Xu, M.; Li, M.; Schlichting, H.; Erlbacher, T.

1700V 34mOhm SiC MOSFET with retrograde doping in junction field-effect transistor region, Proc. Internat. Conf. Electron Dev. Solid State Circ. (EDSSC) 2019, 8754174

Erlekampf, J.; Kallinger, B.; Weiße, J.; Rommel, M.; Berwian, P.; Friedrich, J.; Erlbacher, T. 

Deeper insight into lifetime-engineering in 4H-SiC by ion implantation, J. Appl. Phys. 126 (2019), 045701

Rattmann, G., Pichler, P., Erlbacher, T. 

On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics, Phys. Stat. Solidi (A) 216 (2019), 1900167

Kim, S.; Kim, H.-K., Lim, M.; Jeong, S.; Kang, M.-H.; Kang, M.-S.; Lee, N.-S.; Coung, T.V.; Kim, H.; Erlbacher, T.; Bauer, A.J.; Shin, H.-K. 

Ohmic Contact Mechanism for Ni/C-Faced 4H-n-SiC Substrate, Journal of nanomaterials. Online journal 2019 (2019), Art. 5231983, 5 S

Büttner, J.; Beuer, S.; Petersen, S.; Rommel, M.; Erlbacher, T.; Bauer, A. 

A TCAD Process Model with Monte Carlo Ion Implantation for 4H-SiC JBS Diode Analysis and Design, Poster presented at ICSCRM 2019, International Conference on Silicon Carbide and Related Materials, September 29 - October 4, 2019, Kyoto, Japan

Schlichting, H.; Kocher, M.; Weiße, J.; Erlbacher, T.; Bauer, A. J. 

Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors, Poster presented at 18th International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

Sledziewski, T.; Erlbacher, T. 

SiC MOSFET with a self-aligned channel defined by shallow source-JFET implantation: A simulation study, Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

Rusch, O.; Hellinger, C.; Moult, J.; Corcoran, Y.; Erlbacher, T.

Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology, Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

Lim, M.; Sledziewski, T.; Rommel, M.; Erlbacher, T.; Kim, H.-K.; Kim, S.; Shin, H.-K.; Bauer, A.  

Pre-deposition interfacial oxidation and post-deposition interface nitridation of LPCVD TEOS used as gate dielectric on 4H-SiC; Poster presented at International Conference on Silicon Carbide & Related Materials, September 29th - October 04th, 2019, Kyoto, Japan

Saponara, S.; Ciarpi, G.; Erlbacher, T.; Rattmann, G.

Integrated Passive Devices and Switching Circuit Design for a 3D DC/DC Converter up to 60 V, Journal of circuits, systems and computers (2019), Online First

Sledziewski, T.; Erlbacher, T.; Bauer, A.

Process and design optimization of SiC MOSFET for low on-state resistance, Presentation held at Europe-Korea Conference on Science and Technology, EKC 2019, July 15-18, 2019, Vienna, Austria

Erlbacher, T.  

SiC manufacturing technology towards integrated circuits: Sensors and power devices, Europe-Korean Conference on Science and Technology (EKC) 2019 Vienna, Austria

Weiße, J., Hauck, M., Krieger, M., Bauer, A.J., Erlbacher, T.  

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC, AIP Advances 9 (2019), Nr.5, Art. 055308, 5 S.

Erlbacher, T.  

SIC device manufacturing using ion implantation. Opportunities and challenges Presentation held at KTH IEEE Seminar, Stockholm, Sweden, 23.05.2019

Boettcher, N.; Heckel. T.; Erlbacher, T.; Pelaic, K. 

Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride, 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD 2019. Proceedings : May 19-23, 2019, Shanghai, China

Erlbacher, T., Rattmann, G.  

TSV-basierte Passive Netzwerke zur Monolithischen Integration in SmartPower ICs für Automobilanwendungen, AmE 12.-13.03.2019 Dortmund

Matthus, C.D.; Benedetto, L. di; Kocher, M.; Bauer, A.J.; Licciardo, G.D.; Rubino, A.; Erlbacher, T.

Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements between 20.5 K and 802 K; IEEE Sensors Journal (2019), Online First, 1 S.

Matthus, C.D.; Bauer, A.J.; Frey, L.; Erlbacher, T.

Wavelength-selective 4H-SiC UV-sensor array,
Materials Science in Semiconductor Processing 90 (2019), S.205-211

Albrecht, M.; Erlbacher, T.; Bauer, A.J.; Frey, L. 

Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Pichler, P.; Sledziewski, T.; Häublein, V.; Bauer, A.J.; Erlbacher, T. 

Channeling in 4H-SiC from an Application Point of View; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Sledziewski, T.; Erlbacher, T.; Bauer, A.J.; Frey, L.; Chen, X.M.; Zhao, Y.L.; Li, C.Z.; Dai, X.P. 

Comparison between Ni-SALICIDE and Self-Aligned Lift-Off Used in Fabrication of Ohmic Contacts for SiC Power MOSFET; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Weisse, J.; Hauck, M.; Sledziewski, T.; Krieger, M.; Bauer, A.J.; Mitlehner, H.; Frey, L.; Erlbacher, T. 

On the Origin of Charge Compensation in Aluminum-Implanted n-Type 4H-SiC by Analysis of Hall Effect Measurements; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Weisse, J.; Mitlehner, H.; Frey, L.; Erlbacher, T. 

Design of a 4H-SiC RESURF n-LDMOS Transistor for High Voltage Integrated Circuits; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Kim, H.K.; Kim, S.J.; Buettner, J.; Lim, M.; Erlbacher, T.; Bauer, A.J.; Koo, S.M.; Lee, N.S.; Shin, H.-K. 

Surface Characterization of Ion Implanted 4H-SiC Epitaxial Layers with Ion Energy and Concentration Variations; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Benedetto, L. di; Matthus, C.D.;  Erlbacher, T.; Bauer, A.J.; Licciardo, G.D.; Rubino; A.; Frey, L. 

Performance of 4H-SiC Bipolar Diodes as Temperature Sensor at Low Temperatures; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Benedetto, L. di; Licciardo, G.D.; Huerner, A.; Erlbacher, T.; Bauer, A.J.; Rubino, A.  

First Experimental Test on Bipolar Mode Field Effect Transistor Prototype in 4H-SiC. A Proof of Concept; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Schlichting, H.; Sledziewski, T.; Bauer, A.J.; Erlbacher, T. 

Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors; European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Kocher, M.; Erlbacher, T.; Rommel, M.; Bauer, A.J. 

Decoration of Al Implantation Profiles in 4H-SiC by Bevel Grinding and Dry Oxidation, European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Kocher, M.; Yao, B.T.; Weisse, J.; Rommel, M.; Xu, Z.W.; Erlbacher, T.; Bauer, A.J.

Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements, European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham
 

Rusch, O.; Moult, J., Erlbacher, T.  

Influence of Trench Design on the Electrical Properties of 650V 4H-SiC JBS Diodes, European Conference on Silicon Carbide and Related Materials (ECSCRM) 12, 2018, Birmingham

Buettner, J.; Erlbacher, T.; Bauer, A.

Technological advances towards 4H-SiC JBS diodes for wind power applications, Presentation held on APPLEPIES 2018 : International Conference on Applications in Electronics Pervading Industry, Environment and Society, APPLEPIES 2018; Pisa; Italy; 26 September 2018 through 27 September 2018

Lorenz, Leo; Erlbacher, Tobias; Hilt, Oliver

Future technology trends, Aufsatz in Buch Wide Bandgap Power Semiconductor PacKaging : Materials, Components, and Reliability Cambridge: Woodhead Publishing, 2018

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Matthus C.D., Huerner A., Erlbacher T., Bauer A.J., Frey L.

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes, Solid State Electronics 144 (2018) 101-105

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Weisse, J.; Hauck, M.; Sledziewski, T.; Tschiesche, M.; Krieger, M.; Bauer, A.; Mitlehner, H.; Frey, L.; Erlbacher, T.

Analysis of compensation effects in aluminum-implanted 4H-SiC devices; Konferenzbeitrag International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017, Washington/DC

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Huerner, A.; Heckel, T.; Enduschat, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.

Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs, Konferenzbeitrag International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017, Washington/DC

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Erlbacher, T.; Huerner, A.; Zhu, Y.; Bach, L.; Schletz, A.; Zuerbig, V.; Pinti, L.; Kirste, L.; Giese, C.; Nebel, C.E.; Bauer, A.J.; Frey, L.

Electrical properties of schottky-diodes based on B doped diamond, Konferenzbeitrag International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017, Washington/DC

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Matthus, C.D.; Erlbacher, T.; Hess, A.; Bauer, A.J.; Frey, L.

Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 degrees C, Zeitschriftenaufsatz IEEE transactions on electron devices 64 (2017), Nr.8, S.3399-3404

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Kocher, Matthias; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton

Influence of Al doping concentration and annealing parameters on TiAl based ohmic contacts on 4H-SiC, Poster presented at International Conference on Silicon Carbide and Related Materials, September 17th - 22th, 2017, Washington, D.C., USA

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Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.

Influence of triangular defects on the electrical characteristics of 4H-SiC devices, Poster International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017, Washington/DC

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V. Zuerbig, L. Pinti, L. Kirste, C. Giese, T. Erlbacher, A. Schletz, C.E. Nebel

High Power Schottky Diodes based on p-doped Diamond, OIST Diamond Workshop 2017, Okinawa, Japan, 29.10.-01.11.2017

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Banzhaf, S., Kenntner, J.,  Grieb, M., Schwaiger, S., Erlbacher, T., Bauer, A.J., Frey, L.

Stress reduction in high voltage MIS capacitor fabrication, 19th International Symposium on Power Electronics, Ee 2017; Novi Sad; Serbia; 19 October 2017 through 21 October 2017

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Erlbacher, T.  

Future Bipolar Power SiC Device Trends, International Conference on Advanced Electromaterials (ICAE) 2017, 19.11.2017, Jeju, Korea

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Sledziewski T.

Current Status and Challenges for SiC Power Devices, ICAE 2017, 21. November 2017, Ramada Plaza Jeju Hotel, Jeju, Korea

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Matthus, C.D.; Erlbacher, T.; Schöfer, B.; Bauer, A.J.; Frey, L.

Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration, Konferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Albrecht, M.; Hürner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.

Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFETKonferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Matlok, S.; Erlbacher, T.; Krach, F.; Eckardt, B.

Switching SiC devices faster and more efficient using a DBC mounted terminal decoupling Si-RC element, Konferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Huerner, A.; Erlbacher, T.; Bauer, A.J.; Frey, L.

Monolithically integrated solid-state-circuit-breaker for high power application, sKonferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Benedetto, L. di; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Rubino, A.

Novel advanced analytical design tool for 4H-SiC VDMOSFET devices, Konferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Matthus, C.D.; Burenkov, A.; Erlbacher, T.

Optimization of 4H-SiC photodiodes as selective UV sensors, Konferenzbeitrag European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki

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Schöck, Johannes; Büttner, Jonas; Rommel, Mathias; Erlbacher, Tobias; Bauer, Anton

4.5 kV SiC junction barrier schottky diodes with low leakage current and high forward current density, Poster European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016, Halkidiki 

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Di Benedetto, L.; Licciardo, G.D.; Erlbacher, T.; Bauer, A.J.; Bellone, S.

Analytical Model and Design of 4H-SiC Planar and Trenched JBS Diodes, Zeitschriftenaufsatz IEEE transactions on electron devices 63 (2016), Nr.6, S.2474-2481

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Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Liguori, R.; Rubino, Alfredo

A model of electric field distribution in gate oxide and JFET-region of 4H-SiC DMOSFETs, Zeitschriftenaufsatz IEEE transactions on electron devices 63 (2016), Nr.9, S.3795-3799

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Gruenler, S.; Rattmann, G.; Erlbacher, T.; Bauer, A.J.; Frey, L.

Monolithic 3D TSV-based high-voltage, high-temperature capacitors; Zeitschriftenaufsatz, Konferenzbeitrag Microelectronic engineering 156 (2016), S.19-23

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Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias

Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation, Zeitschriftenaufsatz IEEE Sensors Journal 16 (2016), Nr.11, S.4246-4252

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Benedetto, Luigi di; Licciardo, Gian D.; Erlbacher, Tobias; Bauer, Anton J.; Rubino, Alfredo

Optimized design for 4H-SiC power DMOSFETs, Zeitschriftenaufsatz IEEE Electron Device Letters 37 (2016), Nr.11, S.1454-1457

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Banzhaf, Stefanie; Schwaiger, Stefan; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

Post-trench processing of silicon deep trench capacitors for power electronic applications; International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, Prague

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Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter

Simulating wafer bow for integrated capacitors using a multiscale approach, Konferenzbeitrag, International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) 2016, Montpellier

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Huang, Yaren (Technische Universität München); Erlbacher, Tobias (Fraunhofer IISB); Buettner, Jonas (Fraunhofer IISB); Wachutka, Gerhard (Technische Universität München)

A trade-off between nominal forward current density and surge current capability for 4.5kV SiC MPS diodes, Konferenzbeitrag, International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2016, Prague

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F. Krach, N. Thielen, T. Heckel, A.J. Bauer, T. Erlbacher, L. Frey

Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability, Konferenzbeitrag, Device Research Conference (DRC) , 2016, Newark/DE

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F. Krach, T. Heckel, L. Frey, A. J. Bauer, T. Erlbacher, M. März

Innovative Monolithic RC-Snubber for Fast Switching Power Modules, Proceedings of 9th International Conference on Integrated Power Electronics Systems (CIPS), 2016

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Matthus C.D., Erlbacher T., Burenkov A., Bauer A.J., Frey L.

Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and Characterization, Material Science Forum 858 (2016) 1032-1035

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Wachmann E., Saponara S., Zambelli C., Tisserand P., Charbonnier J., Erlbacher T., Gruenler S., Hartler C., Siegert J., Chassard P., Ton D.M., Ferrari L., Fanucci L.

ATHENIS_3D: Automotive tested high-voltage and embedded non-volatile integrated SoC platform with 3D technology, Proceedings of Design, Automation & Test in Europe Conference & Exhibition (DATE) 2016 894-899

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Gruenler S., Rattmann G., Erlbacher T., Bauer A.J., Krach F., Frey L.

Towards Highly Integrated, Automotive Power SoCs Using 3D TSV-based Capacitors Operating at 100V, CIPS 2016, Nuremberg, Germany

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Hürner, Andreas; Mitlehner, Heinz; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

Conduction loss reduction for bipolar injection field-effect-transistors (BIFET), Konferenzbeitrag International Conference on Silicon Carbide and Related Materials (ICSCRM) 2015, Giardini Naxos

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Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar

Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization, Konferenzbeitrag International Conference on Silicon Carbide and Related Materials (ICSCRM) 2015, Giardini Naxos

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Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs, Konferenzbeitrag
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2015, Giardini Naxos

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Grünler, Saeideh; Rattmann, Gudrun; Erlbacher, Tobias; Bauer, Anton; Frey, Lothar

High-voltage monolithic 3D capacitors based on through-silicon-via technology. (Poster, 2015)

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Erlbacher, T.; Schwarzmann, H.; Bauer, A.J.; Döhler, G.H.; Schreivogel, M.; Lutz, T.; Guillén, F.H.; Graf, J.; Fix, R.; Frey, L.

Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors, Zeitschriftenaufsatz 2015

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Szwarc, R.; Frey, L.; Weber, H.; Moder, I.; Erlbacher, T.; Rommel, M.; Bauer, A.J.

Modelling of the electrochemical etch stop with high reverse bias across pn-junctions. Konferenzbeitrag, 2015

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Hürner, A.; Benedetto, L. di; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.

Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC., Konferenzbeitrag, 2015
 

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Krach, F.; Schwarzmann, H.; Bauer, A.J.; Erlbacher, T.; Frey, L.

Silicon nitride, a high potential dielectric for 600 V integrated RC-snubber applications. Zeitschriftenaufsatz, 2015
 

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Hürner, A.; Erlbacher, T.; Mitlehner, H.; Bauer, A.J.; Frey, L.

Temperature dependent characterization of bipolar injection field-effect-transistors (BiFET) for determining the short-circuit-capability. Konferenzbeitrag, 2015 

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Hürner A., DiBenedetto L., Erlbacher T., Mitlehner H., Bauer A.J., Frey L.

Robust  Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices based on 4H-SiC, Mat. Sci. Forum 821-823 (2015) 656-65

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Gruenler S., Rattmann G., Erlbacher T., Bauer A.J., Frey L.

Fabrication and Characterization of High-Voltage Monolithic 3D Capacitors based on Through-Silicon-Via Technology, IEEE Internat. Interconnect Technology and Advanced Metallization Conference 2015, 18.-21. May 2015 (Talk)

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Matthus C.D., Erlbacher T., Bauer A.J. Frey L.

Ion implanted 4H-SiC UV pin diodes for solar radiation detection – simulation and characterization, Internat. Conference on Silicon Carbide and Related Materials 2015, 04.-09. Oct. 2015, Giardini Naxos, Italy (Poster presentation)

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Albrecht M., Erlbacher T., Bauer A.J., Frey L.

Potential of SiC CMOS for high temperature applications using advanced lateral p-MOSFETs, Internat. Conference on Silicon Carbide and Related Materials 2015, 04.-09. Oct. 2015, Giardini Naxos, Italy (Poster presentation)

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Erlbacher T.

Recent device and process developments towards 4H-SiC power devices for Green Technology, 3^rd Internat. Conference on Advanced Electromaterials, 17.-20. Nov 2015, Jeju, Korea (Invited Talk)

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Huerner, A.

Experimental analysis of bipolar SiC-devices for future energy distribution systems, Konferenzbeitrag, 2014

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Erlbacher, T.

Lateral Power Transistors in Integrated Circuits.
(Habilitationsschrift, 2014)

X

Erlbacher, T.

Reliability of monolithic RC-snubbers in MOS-based power modules. (Konferenzbeitrag, 2014)

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Strenger, C.

Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs., (Konferenzbeitrag, 2014)

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Hürner, A.

Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC, (Konferenzbeitrag, 2014)

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Hutzler, A.; Noreik, B.; Schletz, A.; Schimanek, E.; Erlbacher, T.

Statistische Lebensdauer- und Zuverlässigkeitsanalyse. Cluster Leistungselektronik, Nürnberg, 21.-22.10.2014

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Strenger C., Uhnevionak, V., Mortet V., Ortiz, G., Erlbacher T., Burenkov A., Bauer A.J., Cristiano F., Bedel-Pereira E., Pichler P., Ryssel H., Frey L.

Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs, Materials Science Forums 778-780 (2014) 583-586

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Erlbacher T., Schwarzmann H., Bauer A.J., Frey L., Döhler G., Scheivogel M., Lutz T., Guillén F.H., Graf J., Fix R.

Modeling of ion drift in SiC MOSFET-based chemical sensors, Workshop on Dielectrics in Microelectronics 2014, Cork, Ireland, 9.-11. Jun 2014 (Talk)

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Erlbacher T.

Prospects of Monolithic Capacitors for Power Electronic Applications, CMOS Emerging Technologies Research 2014, Grenoble, France, 6.-8. Jul 2014 (Invited Talk)

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Huerner A., Kallinger B., Mitlehner H., Erlbacher T., Haeublein V., Bauer A.J., Frey L.

Electrical Characterization of n-doped 4H-SiC Epitaxial Layers Grown with Hydrogen Chlorine Addition, European Conference on Silicon Carbide and Related Materials 2014

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Huerner A., Erlbacher T., Mitlehner H., Bauer A.J., Frey L.

Temperature Dependent Characterization of Bipolar-Injection Field-Effect-Transistors (BiFET) for determining the short-circuit capability; European Conference on Silicon Carbide and Related Materials 2014, Grenoble, France, 21.-25. Sep 2014 (Poster presentation)

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Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectronics reliability 53 (2013), No.12, pp.1841-1847, ISSN: 0026-2714

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Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J., Pichler, P., Erlbacher, T., Ryssel, H., Frey, L.

Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs. Symposium on Gallium Nitride and Silicon Carbide Power Technologies 3, San Francisco, 28-31-Oct-2013, ISBN: 978-1-62332-095-9 (Print), ISBN: 978-1-60768-449-7 (PDF), pp.71-80

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Uhnevionak, V., Burenkov, A., Strenger, C., Bauer, A.J., Pichler, P.

On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs. Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 3, San Francisco, 28-31-Oct-2013, ISBN: 978-1-62332-095-9 (Print), ISBN: 978-1-60768-449-7 (PDF), pp.81-86

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Uhnevionak, U., Burenkov, A., Strenger, C., Mortet, V., Bedel-Peireira, E., Cristiano, F., Bauer, A.J., Pichler, P.

Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs. 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), Miyazaki, Japan, 29-Sep-2013 - 4-Oct-2013, ISBN: 978-3-03835-010-1 (Print), ISBN: 978-3-03795-705-9 (CD-ROM), ISBN: 978-3-03835-010-1 (Print + CD-ROM), ISBN: 978-3-03826-391-3 (eBook), pp.483-486

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Lorenz, J., Pichler, P.

Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis. ESSDERC 2013, Proceedings of the 43rd European Solid-State Device Research Conférence, Bucharest, Romania, 16-20-Sep-2013, ISBN: 1-4799-0647-6, ISBN: 978-1-4799-0647-5, pp.242-245

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Iglesias, V., Martin-Martinez, J., Porti, M., Rodriguez, R., Nafria, M., Aymerich, X., Erlbacher, T., Rommel, M., Murakami, K., Bauer, A.J., Frey, L., Bersuker, G.

Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries. Microelectronic engineering 109 (2013), pp.129-132, ISSN: 0167-9317

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Erlbacher, T., Bauer, A. J., Frey, L.

Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration. IEEE transactions on electron devices 59 (2012), No.12, pp.3470-3476, ISSN: 0018-9383

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Häublein, V. Temmel, G., Mitlehner, H., Rattmann, G., Strenger, C., Hürner, A., Bauer, A.J., Ryssel, H., Frey, L.

Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.887-890

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Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J., Mortet, V., Bedel-Pereira, E., Cristiano, F., Krieger, M., Ryssel, H.

Correlation of interface characteristics to electron mobility in channel- implanted 4H-SiC MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.537-540

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Mortet, V., Bedel-Pereira, E., Bobo, J.F., Cristiano, F., Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J.

Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.525-528

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Cristiano, F., Bauer, A., Pichler, P.

Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.533-536

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Mortet, V., Bedel-Pereira, E., Bobo, J., Strenger, C., Uhnevionak, V., Burenkov, A., Cristiano, F., Bauer, A.

Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation. Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2-6-Sep-2012

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Erlbacher, T., Huerner, A., Bauer, A.J., Frey, L.

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications. Solid-State Electronics 75 (2012), ISSN: 0038-1101, pp.33-36

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Schramm, A., Lanfer, H., Petzoldt, J., Rädel, U., Schwarzmann, H., Erlbacher, T.

Comparative investigation on installation space requirements for input filters of DC-link- and matrix converters based on amplitude pseudo-spectra. 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2012, Aalborg, Denmark, 25-28-Jun-2012, ISBN: 978-1-4673-2021-4 (print), ISBN: 978-1-4673-2022-1 (online), ISBN: 978-1-4673-2023-8, pp.9-14

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Iglesias, V., Erlbacher, T., Rommel, M., Murakami, K., Bauer, A.J., Frey, L., Porti, M.; Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., Bersuker, G.

Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks. Poster at 17th Workshop on Dielectrics in Microelectronics, 25-27-Jun-2012, Dresden

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Erlbacher, T., Schwarzmann, H., Bauer, A. J., Dorp, J. vom, Frey, L.

Reliability characterization of dielectrics in 200V trench capacitors. Poster at Workshop on Dielectrics in Microelectronics, WoDiM 2012, Dresden, 25-28-Jun-2012

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Schramm, A., Lanfer, H., Petzoldt, J., Rädel, U., Schwarzmann, H., Erlbacher, T.

A generic approach for comparing input filter efforts of voltage- and current source converters. 21st International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2012. Vol.2,  Sorrento, Italy, 20-22-Jun-2012, ISBN: 978-1-4673-1299-8 (print), ISBN: 978-1-4673-1300-1, ISBN: 978-1-4673-1301-8, pp.1263-1270

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Erlbacher, T., Schwarzmann, H., Bauer, A. J., Berberich, S. E., Dorp, J. vom, Frey, L.

Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers. ISPSD 2012, 24th International Symposium on Power Semiconductor Devices & ICs, Bruges, Belgium, 3-7-Jun-2012, ISBN: 978-1-4577-1594-5 (Print), ISBN: 978-1-4577-1596-9 (Online), ISBN: 978-1-4577-1597-6, pp.283-286

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Cristiano, F., Bauer, A., Pichler, P.

Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012

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Erlbacher, T., Bickermann, M., Kallinger, B., Meissner, E., Bauer, A. J., Frey, L.

Ohmic and rectifying contacts on bulk AlN for radiation detector applications. Physica status solidi. C 9 (2012), No.3-4, pp.968-971, ISSN: 1610-1634, ISSN: 1610-1642, ISSN: 1862-6351

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Schwarzmann, H., Erlbacher, T., Bauer, A. J., Ryssel, H., Frey, L.

Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications. CIPS 2012, 7th International Conference on Integrated Power Electronics Systems, Nuremberg, 6 - 8-Mar-2012, VDE-Verlag, ISBN: 978-3-8007-3414-6, ISSN: 0341-3934, pp. 114-118

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Dorp, J. vom, Berberich, S. E., Erlbacher, T., Bauer, A. J., Ryssel, H., Frey, L.

Monolithic RC-snubber for power electronic applications. IEEE Ninth International Conference on Power Electronics and Drive Systems, PEDS 2011, Singapore, 5-8-Dec-2011, ISBN: 978-1-61284-999-7 (Print), ISBN: 978-1-4577-0000-2 (Online), pp.11-14

X

Dorp, J. vom

Monolithisches RC-Element für leistungselektronische Anwendungen. Erlangen-Nürnberg, 2011, 158 pp.
Erlangen-Nürnberg, Univ., Diss., 2011

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Strenger, C., Häublein, V., Erlbacher, T., Bauer, A.J., Ryssel, H., Beltran, A.M., Schamm-Chardon, S., Mortet, V., Bedel-Pereira, E., Lefebvre, M., Cristiano, F.

Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs. ICSCRM 2011, 14th International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, USA, 11-16-Sep-2011, ISSN: 0255-5476, ISBN: 978-3-03-785419-8, pp.437-440 (Vol.1)

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Murakami, M., Rommel, M., Yanev, V., Erlbacher, T., Bauer, A.J., Frey, L.

A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers. Journal of applied physics 110 (2011), No.5, Art. 054104, 6 pp., ISSN: 0021-8979, ISSN: 1089-7550

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Beltran, A.M., Schamm-Chardon, S., Mortet, V., Lefebvre, M., Bedel-Pereira, E., Cristiano, F., Strenger, C., Häublein, V., Bauer, A.J.

Nano-analytical and electrical characterization of 4H-SiC MOSFETs.  4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, 27-30-Jun-2011, Tours, France, ISBN: 978-3-03-785332-0, pp.134-138

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Dorp, J. vom, Erlbacher, T., Bauer, A.J., Ryssel, H., Frey, L.

Dielectric layers suitable for high voltage integrated trench capacitors. Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.1, Art. 01AB04, 6 pp., ISSN: 0734-211X, ISSN: 1071-1023

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Erlbacher, T., Yanev, V., Rommel, M., Bauer, A.J., Frey, L.

Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS.  Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.1, Art. 01AB08, 4 pp., ISSN: 0734-211X, ISSN: 1071-1023

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Aygun, G., Roeder, G., Erlbacher, T., Wolf, M., Schellenberger, M., Pfitzner, L.

Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area. Journal of applied physics 108 (2010), No.7, Art. 073304, 9 pp., ISSN: 0021-8979, ISSN: 1089-7550

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Strenger, C., Bauer, A.J., Ryssel, H.

Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation. 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010, Sundvolden Conference Center, Oslo, Norway, ,  29-Aug-2010 - 2-Sep-2010, ISBN: 978-3-03-785079-4, pp.382-385

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Erlbacher, T., Rattmann, G., Bauer, A.J., Frey, L.

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices. Poster presented at Symposium on Power Semiconductor Devices & ICs 2010, Hiroshima, Japan, 6-10-Jun-2010

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Erlbacher, T., Rattmann, G., Bauer, A.J., Frey, L.

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices. 22nd International Symposium on Power Semiconductor Devices & IC's, ISPSD 2010, Hiroshima, Japan, 6-10-Jun-2010, ISBN: 978-1-4244-7718-0, ISBN: 978-4-88686-069-9, pp.181-184

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Erlbacher, T., Bauer, A.J., Frey, L.

Reduced on resistance in LDMOS devices by integrating trench gates into planar technology. IEEE Electron Device Letters 31 (2010), No.5, pp.464-466, ISSN: 0741-3106, ISSN: 0193-8576

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Rommel, M., Yanev, V., Paskaleva, A., Erlbacher, T., Lemberger, M., Bauer, A.J., Frey, L.

Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers. Fourth International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing, Vancouver, Canada, 26-28-Apr-2010, ISBN: 978-1-566-77792-6, ISBN: 978-1-607-68142-7, ISSN: 1938-5862, pp.139-156

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Dorp, J. vom, Erlbacher, T., Lorentz, V., Bauer, A.J., Ryssel, H., Frey, L.

Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil. AmE 2010 - Automotive meets electronics, Dortmund, 16-Apr-2010, VDE-Verlag, ISBN: 978-3-8007-3236-4, pp.72-77

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Langner, O., Karolczak, M., Rattmann, G., Kalender, W.

Bar and Point Test Patterns Generated by Dry-Etching for Measurement of High Spatial Resolution in Micro-CT. World Congress on Medical Physics and Biomedical Engineering 2009. Vol.2: Diagnostic imaging, Munich, 7-12-Sep-2009, ISBN: 978-3-642-03878-5, ISBN: 978-3-642-03879-2, DOI: 10.1007/978-3-642-03879-2, pp.428-431

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Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

Search for future high-k dielectrics, boundary conditions and examples. Modern trends in mathematics and physics : Proceedings of the 2nd Alexander von Humboldt-Kolleg, Varna, Bulgaria, 5-10-Sep-2008, ISBN: 978-954-580-264-5, 18 pp.

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Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.

Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale. Microelectronic engineering 86 (2009), No.7-9, pp.1911-1914, ISSN: 0167-9317

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Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.

Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale. Poster at 16th biannual conference of Insulating Films on Semiconductors (INFOS 2009), 29-Jun - 01-Jul-2009, Cambridge University, UK

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Berberich, S.E., Dorp, J. vom, Bauer, A.J., Ryssel, H.

Silicon based trench hole power capacitor. EPE journal 19 (2009), No.2, pp.6-10, ISSN: 0939-8368

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Dorp, J. vom, Berberich, S.E., Bauer, A.J., Ryssel, H.

Analysis of the DC-arc behavior of a novel 3D-active fuse. 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, UK, 15-19-Sep-2008, ISSN: 0038-1101, pp.809-813

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Dorp, J. vom, Berberich, S.E., Bauer, A.J., Ryssel, H.

DC-arc behavior of a novel active fuse. ESSDERC 2008, 38th European Solid-State Device Research Conference, Edinburgh, UK, 15-19-Sep-2008, ISBN: 978-1-4244-2363-7, pp.67-70

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Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.

HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories. Thin solid films 516 (2008), No.21, pp.7727-7731, ISSN: 0040-6090

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Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., Sezi, R., Dehm, C.

Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition. Journal of the Electrochemical Society 155 (2008), No.9, pp.H693-H697, ISSN: 0013-4651

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Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.

Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers. 15th Workshop on Dielectrics in Microelectronics, WoDiM 2008, Bad Saarow (Berlin), 23-25-Jun-2008, ISBN: 978-0-9823012-1-0, ISSN: 1071-1023, pp.482-485

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Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., Bauer, A.J., Ryssel, H., Paskalev, A., Weinreich, W., Fachmann, C., Heitmann, J., Schroeder, U.

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics. Applied Physics Letters 92 (2008), No.25, Art. 252910, 3 pp., ISSN: 0003-6951, ISSN: 1077-3118

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Erlbacher, T.

Schichten hoher Dielektrizitätskonstante für den Einsatz in ladungsbasierten nichtflüchtigen Speicherzellen. Erlangen, 2008, 123 pp., Erlangen-Nürnberg, Univ., Diss., 2008

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Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

High-k: Latest developments and perspectives. Rapid thermal processing and beyond: Applications in semiconductor processing : Special topic volume, Dornstadt, ISBN: 0-87849-391-3, ISBN: 978-0-87849-391-3, pp.165-180

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Erlbacher, T., Bauer, A.J., Ryssel, H.

Hafnium silicate as control oxide in non-volatile memories. 15th Biennial Conference on Insulating Films on Semiconductors 2007, Glyfada Athens, Greece, 20-23-Jun-2007

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