Publications

Autors

Title

Lecture

Publications

Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.

Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectronics reliability 53 (2013), No.12, pp.1841-1847, ISSN: 0026-2714

 

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Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J., Pichler, P., Erlbacher, T., Ryssel, H., Frey, L.

Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs. Symposium on Gallium Nitride and Silicon Carbide Power Technologies 3, San Francisco, 28-31-Oct-2013, ISBN: 978-1-62332-095-9 (Print), ISBN: 978-1-60768-449-7 (PDF), pp.71-80

 

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Uhnevionak, V., Burenkov, A., Strenger, C., Bauer, A.J., Pichler, P.

On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs. Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 3, San Francisco, 28-31-Oct-2013, ISBN: 978-1-62332-095-9 (Print), ISBN: 978-1-60768-449-7 (PDF), pp.81-86

 

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Uhnevionak, U., Burenkov, A., Strenger, C., Mortet, V., Bedel-Peireira, E., Cristiano, F., Bauer, A.J., Pichler, P.

Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs. 15th International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), Miyazaki, Japan, 29-Sep-2013 - 4-Oct-2013, ISBN: 978-3-03835-010-1 (Print), ISBN: 978-3-03795-705-9 (CD-ROM), ISBN: 978-3-03835-010-1 (Print + CD-ROM), ISBN: 978-3-03826-391-3 (eBook), pp.483-486

 

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Lorenz, J., Pichler, P.

Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis. ESSDERC 2013, Proceedings of the 43rd European Solid-State Device Research Conférence, Bucharest, Romania, 16-20-Sep-2013, ISBN: 1-4799-0647-6, ISBN: 978-1-4799-0647-5, pp.242-245

 

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Iglesias, V., Martin-Martinez, J., Porti, M., Rodriguez, R., Nafria, M., Aymerich, X., Erlbacher, T., Rommel, M., Murakami, K., Bauer, A.J., Frey, L., Bersuker, G.

Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries. Microelectronic engineering 109 (2013), pp.129-132, ISSN: 0167-9317

 

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Erlbacher, T., Bauer, A. J., Frey, L.

Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration. IEEE transactions on electron devices 59 (2012), No.12, pp.3470-3476, ISSN: 0018-9383

 

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Häublein, V. Temmel, G., Mitlehner, H., Rattmann, G., Strenger, C., Hürner, A., Bauer, A.J., Ryssel, H., Frey, L.

Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.887-890

 

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Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J., Mortet, V., Bedel-Pereira, E., Cristiano, F., Krieger, M., Ryssel, H.

Correlation of interface characteristics to electron mobility in channel- implanted 4H-SiC MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.537-540

 

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Mortet, V., Bedel-Pereira, E., Bobo, J.F., Cristiano, F., Strenger, C., Uhnevionak, V., Burenkov, A., Bauer, A.J.

Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.525-528

 

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Cristiano, F., Bauer, A., Pichler, P.

Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012, ISBN: 978-3-03-785624-6, pp.533-536

 

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Mortet, V., Bedel-Pereira, E., Bobo, J., Strenger, C., Uhnevionak, V., Burenkov, A., Cristiano, F., Bauer, A.

Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation. Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, St. Petersburg, Russian Federation, 2-6-Sep-2012

 

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Erlbacher, T., Huerner, A., Bauer, A.J., Frey, L.

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications. Solid-State Electronics 75 (2012), ISSN: 0038-1101, pp.33-36

 

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Schramm, A., Lanfer, H., Petzoldt, J., Rädel, U., Schwarzmann, H., Erlbacher, T.

Comparative investigation on installation space requirements for input filters of DC-link- and matrix converters based on amplitude pseudo-spectra. 3rd IEEE International Symposium on Power Electronics for Distributed Generation Systems, PEDG 2012, Aalborg, Denmark, 25-28-Jun-2012, ISBN: 978-1-4673-2021-4 (print), ISBN: 978-1-4673-2022-1 (online), ISBN: 978-1-4673-2023-8, pp.9-14

 

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Iglesias, V., Erlbacher, T., Rommel, M., Murakami, K., Bauer, A.J., Frey, L., Porti, M.; Martin-Martinez, J., Rodriguez, R., Nafria, M., Aymerich, X., Bersuker, G.

Effect of HfO2 polycrystallinity on distribution of the CAFM-induced TDDB in high-k gate stacks. Poster at 17th Workshop on Dielectrics in Microelectronics, 25-27-Jun-2012, Dresden

 

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Erlbacher, T., Schwarzmann, H., Bauer, A. J., Dorp, J. vom, Frey, L.

Reliability characterization of dielectrics in 200V trench capacitors. Poster at Workshop on Dielectrics in Microelectronics, WoDiM 2012, Dresden, 25-28-Jun-2012

 

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Schramm, A., Lanfer, H., Petzoldt, J., Rädel, U., Schwarzmann, H., Erlbacher, T.

A generic approach for comparing input filter efforts of voltage- and current source converters. 21st International Symposium on Power Electronics, Electrical Drives, Automation and Motion, SPEEDAM 2012. Vol.2,  Sorrento, Italy, 20-22-Jun-2012, ISBN: 978-1-4673-1299-8 (print), ISBN: 978-1-4673-1300-1, ISBN: 978-1-4673-1301-8, pp.1263-1270

 

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Erlbacher, T., Schwarzmann, H., Bauer, A. J., Berberich, S. E., Dorp, J. vom, Frey, L.

Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers. ISPSD 2012, 24th International Symposium on Power Semiconductor Devices & ICs, Bruges, Belgium, 3-7-Jun-2012, ISBN: 978-1-4577-1594-5 (Print), ISBN: 978-1-4577-1596-9 (Online), ISBN: 978-1-4577-1597-6, pp.283-286

 

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Uhnevionak, V., Strenger, C., Burenkov, A., Mortet, V., Bedel-Pereira, E., Cristiano, F., Bauer, A., Pichler, P.

Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs. 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), St. Petersburg, Russian Federation, 2-6-Sep-2012

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Erlbacher, T., Bickermann, M., Kallinger, B., Meissner, E., Bauer, A. J., Frey, L.

Ohmic and rectifying contacts on bulk AlN for radiation detector applications. Physica status solidi. C 9 (2012), No.3-4, pp.968-971, ISSN: 1610-1634, ISSN: 1610-1642, ISSN: 1862-6351

 

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Schwarzmann, H., Erlbacher, T., Bauer, A. J., Ryssel, H., Frey, L.

Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications. CIPS 2012, 7th International Conference on Integrated Power Electronics Systems, Nuremberg, 6 - 8-Mar-2012, VDE-Verlag, ISBN: 978-3-8007-3414-6, ISSN: 0341-3934, pp. 114-118

 

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Dorp, J. vom, Berberich, S. E., Erlbacher, T., Bauer, A. J., Ryssel, H., Frey, L.

Monolithic RC-snubber for power electronic applications. IEEE Ninth International Conference on Power Electronics and Drive Systems, PEDS 2011, Singapore, 5-8-Dec-2011, ISBN: 978-1-61284-999-7 (Print), ISBN: 978-1-4577-0000-2 (Online), pp.11-14

 

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Dorp, J. vom

Monolithisches RC-Element für leistungselektronische Anwendungen. Erlangen-Nürnberg, 2011, 158 pp.
Erlangen-Nürnberg, Univ., Diss., 2011

 

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Strenger, C., Häublein, V., Erlbacher, T., Bauer, A.J., Ryssel, H., Beltran, A.M., Schamm-Chardon, S., Mortet, V., Bedel-Pereira, E., Lefebvre, M., Cristiano, F.

Comparative study of electrical and microstructural properties of 4H-SiC MOSFETs. ICSCRM 2011, 14th International Conference on Silicon Carbide and Related Materials 2011, Cleveland, Ohio, USA, 11-16-Sep-2011, ISSN: 0255-5476, ISBN: 978-3-03-785419-8, pp.437-440 (Vol.1)

 

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Murakami, M., Rommel, M., Yanev, V., Erlbacher, T., Bauer, A.J., Frey, L.

A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers. Journal of applied physics 110 (2011), No.5, Art. 054104, 6 pp., ISSN: 0021-8979, ISSN: 1089-7550

 

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Beltran, A.M., Schamm-Chardon, S., Mortet, V., Lefebvre, M., Bedel-Pereira, E., Cristiano, F., Strenger, C., Häublein, V., Bauer, A.J.

Nano-analytical and electrical characterization of 4H-SiC MOSFETs.  4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications, 27-30-Jun-2011, Tours, France, ISBN: 978-3-03-785332-0, pp.134-138

 

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Dorp, J. vom, Erlbacher, T., Bauer, A.J., Ryssel, H., Frey, L.

Dielectric layers suitable for high voltage integrated trench capacitors. Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.1, Art. 01AB04, 6 pp., ISSN: 0734-211X, ISSN: 1071-1023

 

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Erlbacher, T., Yanev, V., Rommel, M., Bauer, A.J., Frey, L.

Gate oxide reliability at the nano-scale evaluated by combining cAFM and CVS.  Journal of vacuum science and technology B. Microelectronics and nanometer structures 29 (2011), No.1, Art. 01AB08, 4 pp., ISSN: 0734-211X, ISSN: 1071-1023

 

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Aygun, G., Roeder, G., Erlbacher, T., Wolf, M., Schellenberger, M., Pfitzner, L.

Impact of temperature increments on tunneling barrier height and effective electron mass for plasma nitrided thin SiO2 layer on a large wafer area. Journal of applied physics 108 (2010), No.7, Art. 073304, 9 pp., ISSN: 0021-8979, ISSN: 1089-7550

 

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Strenger, C., Bauer, A.J., Ryssel, H.

Effect of increased oxide hole trap density due to nitrogen incorporation at the SiO2/SiC interface on F-N current degradation. 8th European Conference on Silicon Carbide and Related Materials, ECSCRM 2010, Sundvolden Conference Center, Oslo, Norway, ,  29-Aug-2010 - 2-Sep-2010, ISBN: 978-3-03-785079-4, pp.382-385

 

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Erlbacher, T., Rattmann, G., Bauer, A.J., Frey, L.

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices. Poster presented at Symposium on Power Semiconductor Devices & ICs 2010, Hiroshima, Japan, 6-10-Jun-2010

 

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Erlbacher, T., Rattmann, G., Bauer, A.J., Frey, L.

Trench gate integration into planar technology for reduced on-resistance in LDMOS devices. 22nd International Symposium on Power Semiconductor Devices & IC's, ISPSD 2010, Hiroshima, Japan, 6-10-Jun-2010, ISBN: 978-1-4244-7718-0, ISBN: 978-4-88686-069-9, pp.181-184

 

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Erlbacher, T., Bauer, A.J., Frey, L.

Reduced on resistance in LDMOS devices by integrating trench gates into planar technology. IEEE Electron Device Letters 31 (2010), No.5, pp.464-466, ISSN: 0741-3106, ISSN: 0193-8576

 

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Rommel, M., Yanev, V., Paskaleva, A., Erlbacher, T., Lemberger, M., Bauer, A.J., Frey, L.

Electrical scanning probe microscopy techniques for the detailed characterization of high-k dielectric layers. Fourth International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing, Vancouver, Canada, 26-28-Apr-2010, ISBN: 978-1-566-77792-6, ISBN: 978-1-607-68142-7, ISSN: 1938-5862, pp.139-156

 

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Dorp, J. vom, Erlbacher, T., Lorentz, V., Bauer, A.J., Ryssel, H., Frey, L.

Integrierbare Bauelemente zur Erhöhung der Betriebssicherheit elektronischer Systemkomponenten im Automobil. AmE 2010 - Automotive meets electronics, Dortmund, 16-Apr-2010, VDE-Verlag, ISBN: 978-3-8007-3236-4, pp.72-77

 

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Langner, O., Karolczak, M., Rattmann, G., Kalender, W.

Bar and Point Test Patterns Generated by Dry-Etching for Measurement of High Spatial Resolution in Micro-CT. World Congress on Medical Physics and Biomedical Engineering 2009. Vol.2: Diagnostic imaging, Munich, 7-12-Sep-2009, ISBN: 978-3-642-03878-5, ISBN: 978-3-642-03879-2, DOI: 10.1007/978-3-642-03879-2, pp.428-431

 

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Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

Search for future high-k dielectrics, boundary conditions and examples. Modern trends in mathematics and physics : Proceedings of the 2nd Alexander von Humboldt-Kolleg, Varna, Bulgaria, 5-10-Sep-2008, ISBN: 978-954-580-264-5, 18 pp.

 

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Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.

Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale. Microelectronic engineering 86 (2009), No.7-9, pp.1911-1914, ISSN: 0167-9317

 

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Yanev, V., Erlbacher, T., Rommel, M., Bauer, A.J., Frey, L.

Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale. Poster at 16th biannual conference of Insulating Films on Semiconductors (INFOS 2009), 29-Jun - 01-Jul-2009, Cambridge University, UK

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Berberich, S.E., Dorp, J. vom, Bauer, A.J., Ryssel, H.

Silicon based trench hole power capacitor. EPE journal 19 (2009), No.2, pp.6-10, ISSN: 0939-8368

 

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Dorp, J. vom, Berberich, S.E., Bauer, A.J., Ryssel, H.

Analysis of the DC-arc behavior of a novel 3D-active fuse. 38th European Solid-State Device Research Conference, ESSDERC 2008, Edinburgh, UK, 15-19-Sep-2008, ISSN: 0038-1101, pp.809-813

 

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Dorp, J. vom, Berberich, S.E., Bauer, A.J., Ryssel, H.

DC-arc behavior of a novel active fuse. ESSDERC 2008, 38th European Solid-State Device Research Conference, Edinburgh, UK, 15-19-Sep-2008, ISBN: 978-1-4244-2363-7, pp.67-70

 

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Erlbacher, T., Jank, M.P.M., Lemberger, M., Bauer, A.J., Ryssel, H.

HfSiO/SiO2- and SiO2/HfSiO/SiO2-gate stacks for non-volatile memories. Thin solid films 516 (2008), No.21, pp.7727-7731, ISSN: 0040-6090

 

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Erlbacher, T., Jank, M.P.M., Ryssel, H., Frey, L., Engl, R., Walter, A., Sezi, R., Dehm, C.

Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition. Journal of the Electrochemical Society 155 (2008), No.9, pp.H693-H697, ISSN: 0013-4651

 

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Erlbacher, T., Graf, T., DasGupta, N., Bauer, A.J., Ryssel, H.

Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers. 15th Workshop on Dielectrics in Microelectronics, WoDiM 2008, Bad Saarow (Berlin), 23-25-Jun-2008, ISBN: 978-0-9823012-1-0, ISSN: 1071-1023, pp.482-485

 

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Yanev, V., Rommel, M., Lemberger, M., Petersen, S., Amon, B., Erlbacher, T., Bauer, A.J., Ryssel, H., Paskalev, A., Weinreich, W., Fachmann, C., Heitmann, J., Schroeder, U.

Tunneling atomic-force microscopy as a highly sensitive mapping tool for the characterization of film morphology in thin high-k dielectrics. Applied Physics Letters 92 (2008), No.25, Art. 252910, 3 pp., ISSN: 0003-6951, ISSN: 1077-3118

 

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Erlbacher, T.

Schichten hoher Dielektrizitätskonstante für den Einsatz in ladungsbasierten nichtflüchtigen Speicherzellen. Erlangen, 2008, 123 pp., Erlangen-Nürnberg, Univ., Diss., 2008

 

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Bauer, A.J., Lemberger, M., Erlbacher, T., Weinreich, W.

High-k: Latest developments and perspectives. Rapid thermal processing and beyond: Applications in semiconductor processing : Special topic volume, Dornstadt, ISBN: 0-87849-391-3, ISBN: 978-0-87849-391-3, pp.165-180

 

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Erlbacher, T., Bauer, A.J., Ryssel, H.

Hafnium silicate as control oxide in non-volatile memories. 15th Biennial Conference on Insulating Films on Semiconductors 2007, Glyfada Athens, Greece, 20-23-Jun-2007

 

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