We are experienced with the characterization of the optical, electrical, structural, physical, and chemical properties of different crystal, wafer and epi materials. This includes e.g. x-ray topography, various atomic force microscopy methods, transmission electron microscopy, and electrical and optical defect spectroscopy.
Furthermore, we utilize a customized design of test devices which are processed in a fully CMOS equipped clean room facility. This allows a systematic correlation of the material properties to device performance and the identification of device critical defects.
Customized design of test devices
Processing of test devices (e.g. GaAs, AlGaN, SiC, Diamond) in a fully CMOS equipped clean room facility
Identification of device critical materials defects and correlation with device performance
Characterization of crystals and epitaxial structures (e.g. x-ray topography, defect selective etching, cathodoluminescence, photoluminescence, optical, Raman- and FTIR spectroscopy, conductive atomic force microscopy and electron beam induced current measurements, IV, CV measurements, DLTS)
Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.