Material Qualification

We are experienced with the characterization of the optical, electrical, structural, physical, and chemical properties of different crystal, wafer and epi materials. This includes e.g. x-ray topography, various atomic force microscopy methods, transmission electron microscopy, and electrical and optical defect spectroscopy.

Furthermore, we utilize a customized design of test devices which are processed in a fully CMOS equipped clean room facility. This allows a systematic correlation of the material properties to device performance and the identification of device critical defects.

© C. Miersch / Fraunhofer IISB
SAW structures on sapphire
© Kurt Fuchs / Fraunhofer IISB
Optical and electron microscopy
© Fraunhofer IISB
EBIC image of GaN HEMT device


  • Customized design of test devices
  • Processing of test devices (e.g. GaAs, AlGaN, SiC, Diamond) in a fully CMOS equipped clean room facility
  • Identification of device critical materials defects and correlation with device performance
  • Characterization of crystals and epitaxial structures (e.g. x-ray topography, defect selective etching, cathodoluminescence, photoluminescence, optical, Raman- and FTIR spectroscopy, conductive atomic force microscopy and electron beam induced current measurements, IV, CV measurements, DLTS)

Focus Areas

Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.