Material Qualification

We are experienced with the characterization of the optical, electrical, structural, physical, and chemical properties of different crystal, wafer and epi materials. This includes e.g. x-ray topography, various atomic force microscopy methods, transmission electron microscopy, and electrical and optical defect spectroscopy.

Furthermore, we utilize a customized design of test devices which are processed in a fully CMOS equipped clean room facility. This allows a systematic correlation of the material properties to device performance and the identification of device critical defects.

• Customized design of test devices
• Processing of test devices (e.g. GaAs, AlGaN, SiC, Diamond) in a fully CMOS equipped clean room facility
• Identification of device critical materials defects and correlation with device performance
• Characterization of crystals and epitaxial structures (e.g. x-ray topography, defect selective etching, cathodoluminescence, photoluminescence, optical, Raman- and FTIR spectroscopy, conductive atomic force microscopy and electron beam induced current measurements, IV, CV measurements, DLTS)