Workshop "Entwicklungen in der Plasmaätztechnologie"

November 26, 2003

Fraunhofer IISB, Erlangen

Entwicklungen in der Plasmaätztechnologie

Ätzen kleiner Strukturen und neuer Materialien

ITRS: The Roadmap of Material Challenges
Dr. Manfred Engelhardt, Infineon Technologies AG, Munich, Germany

Line edge roughness investigations for dielectric etches with 193nm lithography
Dr. Stefan Machill, Infineon Technologies AG, Dresden, Germany

Influence of resist strip on low-k materials
Dr. Robert Müller, Mattson International GmbH, Dornstadt, Germany


Influence of organic and inorganic masks on process stability
Klaus Reingruber, Infineon Technologies AG, Regensburg, Germany

Integrated metrology for gate-etch control
Joachim Dannenberg, Lam Research GmbH, Ismaning, Germany

Advanced etch-to-depth process control
Ralf Tiede, Applied Materials GmbH, Dresden, Germany

High aspect ratio silicon trench etch using a high density plasma source with interferometric endpoint detection
Kevin Powell, Trikon Technologies Ltd., Newport, United Kingdom

In situ monitoring of a via-etch process
Gerhard Spitzlsperger, Renesas Semiconductor Europe (Landshut) GmbH, Germany