Dynamic Device Characterization

Motivation

“A new era begins,” “lowest losses,” “Ultra fast switching,” “50 MHz switching frequency,” “10 x higher power density”

That’s the current opinion of novel SiC and GaN power devices.

 

But do you want to know the real benefits of using SiC and GaN in your specific system?

We are your manufacturer-independent partner for device evaluation and power semiconductor modelling for virtual prototyping.

Fields of Research and Services

Power semiconductor benchmarks

Evaluation of novel devices in highly efficient power electronic systems

Device modelling for computer-based system optimization and virtual prototyping

Verification of measured and simulated device characteristics

Modelling of all application-related device characteristics

Features

Highly dynamic switch and diode characterization up to 2000 V, 100 A, 250 °C

All kinds of packaged and bare die devices

Flexible gate drive for normally-on and off behavior

Extended features like switching energy, gate charge, on resistance, diode charge according to international standards

Ease of use automated documentation and numerical database generation for device modeling 

Brochure

Publications

AUTHORS

TITLE

TALK

PAPER

Endruschat

A. Endruschat; T. Heckel; R. Reiner; P. Waltereit; R. Quay; O. Ambacher; M. März; B. Eckardt; L. Frey, Slew rate control of a 600 V 55 mΩ GaN cascode, IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)

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Kreutzer

Kreutzer O., Heckel T., Maerz M.: Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs. International Conference on Silicon Carbide and Related Materials, ICSCRM, Giardini Naxos, 2015

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Heckel

T. Heckel, B. Eckardt, M. März, L. Frey, "SiC MOSFETs in Hard-Switching Bidirectional DC/DC Converters", Materials Science Forum, Vols. 821-823, pp. 689-692, Jun. 2015

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Heckel

T. Heckel, Frey, L., "A novel charge based SPICE model for nonlinear device capacitances," in Wide Bandgap Power Devices and Applications (WiPDA), 2015 IEEE 3rd Workshop on , vol., no., pp.141-146, 2-4 Nov. 2015

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Heckel

T. Heckel, C. Rettner, M. März, “Fundamental Efficiency Limits in Power Electronic Systems”, International Telecommunications Energy Conference 2015

   

Heckel

Heckel, T.: Aufbruch in neue Performance-Regionen bei Schaltwandlern – Messungen an GaN-Bauelementen und Anwendungserfahrungen. Workshop Schaltungstechnik für GaN-Bauelemente in der Leistungselektronik, 4. November 2013, Berlin

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Heckel

Heckel, T.: GaN-Devices in power electronics. Jahrestagung Fraunhofer IISB und 27. DGKK Workshop, 06.12.2012, Erlangen

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Heckel

Heckel, T.: GaN- and SiC-Devices in power electronics. Leistungselektronik-Kolloquium des Fraunhofer Innovationsclusters „Elektronik für nachhaltige Energienutzung“, 17.12.2012, Erlangen

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