SiC Services

Custom-Tailored SiC-Services

IISB’s interdisciplinary toolbox for your projects

Embedded into IISB’s 'Technology & Manufacturing‘ and in close collaboration with our very own in-house brand ‘π-Fab’ we offer R&D Services ranging from material development and prototype devices to module assembly and mechatronic systems. Its unique material properties characterize 4H-SiC as ideal semiconductor for the realization of high-voltage and high-power electronic devices as well as for sensor and detector applications in harsh environments. Design studies, feasibility tests, proofs of concept or prototype fabrication make up only part of what IISB’s interdisciplinary toolbox has to offer.  

 

 

One-stop Solutions from Material to System

 

It is our major perspective to make our technology and knowledge in SiC available to our customers and in doing so support their research, development and manufacturing of devices, modules as well as systems. A mission that heavily relies on 20 years of expertise, in which the Fraunhofer IISB has been cooperating with partners from SiC industry and research, and has been able to establish its headquarter in Erlangen as Germany’s hotspot for silicon carbide.

SiC Core Competencies

SiC Material Development

 

Material development forms the base of IISB’s SiC Services. Device and system expertise support our aim to provide customtailored material with quality beyond state of the art.  As to that, we offer one-stop solutions from epitaxy, to characterization, simulation and device processing.

 

Homoepitaxy

 

Fraunhofer IISB has been developing epitaxial growth processes for growth on the Si- and C-face of 4H-SiC vicinal substrates having different off-cuts, e.g. different off-cut angles and directions. Furthermore, a certain growth process for epilayers with low Basal Plane Dislocation densities is available.

 

Equipment

  • Horizontal hot-wall reactor (VP508GFR)
  • 2 separate growth tubes for n- and p-type layers with low compensation
  • Wafer capacity: 1 x 3 inch, 1 x 100 mm

CVD Process

  • Growth temperature up to 1700 °C
  • Precursors: silane, propane
  • Carrier gas: hydrogen
  • n-type by nitrogen doping (N2)
  • p-type by aluminum doping (TMA)

Typical Specifications

  • Epilayer thickness: 1 µm up to 60 µm
  • Thicker layers on request
  • n-type : 1 x 1015 cm-3 < n < 5 x 1017 cm-3
  • p-type : 1 x 1016 cm-3 < p < 5 x 1019 cm-3
  • Other doping levels on request

Characterization & Defect Analysis

 

Additionally, the IISB has profound knowledge about the characterization of structural defects in 4H-SiC material as well as about the electrical characterization of electronic devices at its disposal. We offer characterization services based on the methods listed below and support our customers to identify the appropriate characterization methods for their specific topics.

Epilayers and Devices

  • SEM equipped with EDS, CL, EBIC
  • TEM equipped with EDS, EELS
  • Focused ion beam (FIB)
  • X-ray topography (XRT)
  • Atomic force microscopy (AFM)

Epitaxial Layers

  • Defect selective etching (DSE)
  • Capacitance-voltage (C-V) measurements
  • Fourier-transformed infrared spectroscopy (FTIR)
  • Microwave-detected photoconductivity decay (µ-PCD)

Electronic Devices

  • Electrical characterization of devices (I-V, C-V) up to 500 °C
  • Parameter analysis of MOSFET devices
  • Static and dynamic characterization of high voltage devices
  • Automatic prober for reliability prediction