π-Fab - Prototype Fabrication

π-Fab - Electron Device Prototype Fabrication

As part of IISB‘s ‚Technology & Manufacturing‘ we operate our stand-alone brand π-Fab – a prototyping service which comprises a continuous silicon CMOS and silicon carbide process line in an industry-compatible environment. π-Fab is the result of three decades of experience in microelectronics research and development, in which we extended our activities to industry-oriented low-volume prototype fabrication of custom-tailored electron devices, with a focus on power devices, CMOS devices, passives, sensors, and MEMS.

 

Flexibility as a Matter of Principle

 

 


 

The unique characteristic of π-Fab is a high flexibility in wafer material and size. Silicon wafers with diameters of 150 mm and 200 mm are handled by default, further diameters on request. The process line is based on a 0.8 μm Si-CMOS technology. To keep flexibility high an advanced contamination control is available.

 

SiC Prototype Foundry


Special attention has been given to silicon carbide (SiC) device processing on 100 mm and 150 mm wafers. In order to realize all dedicated SiC process steps, such as epitaxy, ICP dry trench etching, growth of silicon dioxide, implantation at elevated temperatures, implant activation annealing, or ohmic contact alloying, we provide additional equipment.

Furthermore, π-Fab is designed as a platform where equipment assessment and optimization, or manufacturing control issues for customers can be covered. It thus also forms the basis for IISB’s SiC-Services, which cover the whole value chain, from material to devices, SiC modules development and assembly up to implementation of SiC mechatronic systems.

 

Available Process Steps

 

As described above, π-Fab sums up to flexibility and individuality and handles various wafer sizes and types. As of that, it is our main objective to support our customers with the fabrication of customized electron devices, as well as with particular processing steps or combination of steps, while enabling the customer to determine the points of entry and exit from the process line, at any time:

Optionality ...

  • Epitaxy
  • Lithography
  • Oxidation
  • LPCVD
  • Ion Implantation
  • Annealing  

 

... for Individuality

  • Dry & Wet Etching
  • Metallization
  • Difussion
  • Layer Deposition
  • Metrology
  • and more ...

Publications

 

Brochures

 

Further Services at IISB

Custom-tailored SiC

SiC-Services


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