GADEST 20/24

The GADEST (Gettering and Defect Engineering in Semiconductor Technology) conference is devoted to semiconductor defect physics, materials science, and device technology and focuses on both fundamental as well as technological aspects of defects, growth, processing, and modelling of electronic materials and devices, ranging from microelectronics to photovoltaics.

Since 1985, the GADEST conference series provides a forum for experts in the field of semiconductor technology, semiconductor device physics, and defect physics. Focusing on applied research, an important goal of the GADEST is to bring together academics and industry. The spirit of the GADEST is to establish an atmosphere which allows for close discussions and interactions among participants.

At the GADEST 20/24, Fraunhofer IISB is involved by the conference chairs Prof. Johannes Heitmann and Dr. Franziska Beyer (together with Prof. Daniel Hiller from IAP, TU Freiberg), support of the conference organization, and by research presentations. We are looking forward to meeting you at the GADEST20 2024!

The following presentations report on research results of Fraunhofer IISB:

Monday (Sept. 9), MoA1 Session: Group IV Alloys

13:30-14:10, I05, Jörg Schulze:
Growth of Silicon-based Germanium Tin Alloys

Monday Poster Session

MP03, Ulrich Bläß:
Basal Dislocations in HVPE Grown GaN – Characterization and Importance for Stress Relaxation during Growth

MP16, Christian Röder:
Operando Analysis of Self-heating Effects on AlN-based HEMTs on SiC by Confocal Micro-Raman Spectroscopy

Tuesday (Sept. 10), TuA2 Session: WBG Devices

17:20-17:40, O26, Alexander Kinstler:
Direct Investigation of Localized Leakage Currents in GaN on Sapphire Pin Diodes with Respect to Structural Defects and Conduction Mechanisms

Tuesday Poster Session

TP03, Franziska C. Beyer:
Point Defect Characterization of Proton-irradiated n-type GaAs

TP20, Amy Albrecht:
Optical Characterization of Color Centers in AlN

TP21, Christian Miersch:
Process Mode Engineering of Atomic Layer Etching of Wide-bandgap Materials

Thursday (Sept. 12), ThA2 Session: Defect Characterization II

16:00-16:20, O41, Roland Weingärtner:
Enhanced Emission in Erbium- and Ytterbium-doped Gallium Oxide Devices Based on the Sensitization of Oxygen Vacancies

17:20-17:40, O45, Kuei-Shen Hsu:
Investigation of Striations in Single-crystalline Silicon Wafers by THz-TDS and other Characterization Methods