Power Electronics Colloquium

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If you would like to be informed about upcoming Fraunhofer IISB power electronics colloquia (online as well as on-site in Erlangen), please send an email to Birgit Kott.

The YESvGaN project

The focus of YESvGaN is on the establishment of a new class of vertical GaN-on-foreign-substrates (vGaN) power transistors. These combine the performance benefits of vertical wide-bandgap transistors with the cost advantages of established silicon technology. Fraunhofer IISB contributes to the project along the entire value chain - from material- and processing-related tasks up to the development of a power module.

In the colloquium we will discuss the application of the YESvGaN power module and system demonstrators. Join us to explore the contributions of YESvGaN to the advancement of wide-bandgap technologies!
 

Presentations

YESvGaN - Project Overview and Conclusion
Dr. Christian Huber, Robert Bosch GmbH, Renningen, Germany

The presentation provides a project overview outlining the objectives, methods, and results of the YESvGaN project. Special attention will be paid to the development of epitaxy and chip technology for vertical GaN membrane transistors. The lessons learned include important insights gained from the challenges and successes of the project in order to optimize future projects.

vGaN-ready Power Module with Integrated Gate Driver Stage
Anne Sacher, Fraunhofer IISB, Erlangen, Germany

Power modules require extremely low parasitic elements in the gate drive area. Within YESvGaN, Fraunhofer IISB developed a vGaN-capable power module in which the gate driver is integrated directly onto the substrate in order to optimally connect the driver to the gate.

Application of the Power Module in SiCtech Applications
Prof. Enrique Dede, SiCtech Induction, Valencia, Spain

Bidirectional DC/DC converters for EV battery chargers and induction heating inverters are potential areas of application for the YESvGaN half-bridge power module. The characterization of the module with SiC in terms of efficiency and performance is the basis for the design of these systems as well as for future developments in the field of efficient power electronic systems.