E-MRS Fall Meeting 2026

Symposium A: New frontiers in wide-bandgap semiconductors and heterostructures for electronics, optoelectronics and sensing – III

In the last decades, WBG (wide bandgap) semiconductors SiC and group III-nitrides experienced tremendous improvements in materials quality and device maturity and are now employed in a variety of electronics, optoelectronics and sensing applications. Concerning materials, 4H-SiC is now available on large area substrates (200 mm diameter) for JBS diodes and power MOSFETs. On the other hand, GaN-based optoelectronic devices (LED, lasers) and high-electron-mobility transistors (HEMTs) have been often developed from heteroepitaxial materials on foreign substrates (Al₂O₃, Si, SiC). Recently, high-quality bulk GaN substrates have started to be available for research for these technologies.

The symposium will serve as a forum for experts from academia and industry to discuss the critical issues in the state-of-the-art SiC and GaN technologies, giving wide attention to new frontiers in novel UWBG materials and devices and 2D heterostructures on them.

Scientific program of Symposium A
 

Symposium organizers:

• Michal Bockowski (Polish Academy of Science, Warsaw)
• Vanya Darakchieva (Lund University)
• Elke Meissner (Fraunhofer IISB, Erlangen)
• Fabrizio Roccaforte (CNR-IMM, Catania)
   

We are looking forward to seeing you in Warsaw!