The Basis for new Applications

We support material, device and equipment manufacturers and their suppliers by delivering scientific-technological solutions in the field of production and characterization of crystals, epitaxial layers, and devices. This ultimately enables our partners to improve their material quality and reduce production costs. To achieve this, we identify defects that are harmful for the device performance and reliability and look for solutions to avoid them. We develop technologies for new materials and tailor the material properties for new applications. Our focus is on semiconductors for power electronics, communication electronics, sensors, detectors, and quantum technologies.


Our strategy is the optimization of the manufacturing processes through a combination of thorough experimental process analysis, tailored characterization techniques, and numerical modeling. For that purpose, we have a well-suited infrastructure at hand, which consists of R&D type furnaces and epitaxial reactors, state of the art metrology tools for the investigation of the physical, chemical, electrical, and structural material properties as well as powerful simulation programs well suited for heat and mass transport calculations. Prototype devices can be processed in house in our qualified 150 mm SiC line or in our flexible R&D line.


We have profound experience in the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling. In the past, we have significantly contributed to the development of the VGF technique for the industrial production of a variety of crystal materials as well as to the epitaxy of high quality SiC layers. Several national and international research awards underline the achievements of the Materials Department over the last years for its outstanding scientific-technological results as well as for its excellent contributions to the education of students and engineers.



TRANSFORM - European SiC Value Chain for a Greener Economy

© Fraunhofer IISB
200 mm and 150 mm SiC wafers in comparison.

With the European TRANSFORM project, the IISB is building a complete and highly competitive European supply chain for power electronics based on silicon carbide (SiC) power semiconductors.

The partners of the ECSEL project TRANSFORM, funded by the EU and the BMBF, are building a highly competitive European supply chain for SiC power electronics. One focus is the development of a semiconductor technology for future SiC substrates with 200 mm diameter, which will significantly reduce the cost of SiC power devices, as currently substrates with a diameter of 150 mm are state of the art.

In the Joint Lab in close partnership with the equipment manufacturers, the IISB is developing

  • processes for an advanced multi-wafer SiC epitaxy reactor from the company Aixtron,
  • novel equipment for implant activation and substrate oxidation from the company Centrotherm,
  • as well as innovative material characterisation by means of X-ray topography with the company Rigaku.

The close scientific exchange also provides valuable feedback to the substrate and device manufacturers involved in the project to accelerate the transition to 200 mm technologies and to further improve quality and reliability of the substrates, epitaxial layers and devices.

TRANSFORM homepage



Explore the Entire Power Electronic Systems Value Chain