We perform specific research on growth of silicon by the Czochralski technique mainly for power electronics and photovoltaics application with respect to higher yield and improved material quality.

In the field of directional solidification emphasis is put on innovative crucible and coating materials to reduce harmful defects and impurities. Numerical modeling gives us a deeper insight into the heat and mass transport phenomena occurring during growth.

We offer individual services such as specific crystal growth experiments and characterization of silicon material.

© Fraunhofer IISB
Life time map of a mc Si ingot
© Kurt Fuchs / Fraunhofer IISB
Full wafer mapping of defects by XRT
© Fraunhofer IISB
Analysis of growth instabilities in heavily doped Si


  • Specific crystal growth experiments in special R&D furnaces in house and at partners’ sites
  • Investigation of melt – crucible interaction phenomena for Cz and DS configurations
  • Spray coating of crucibles, substrates and other furnace parts based on Si3N4, SiO2, SiC and TaC suspensions
  • Characterization (shape of the solid-liquid interface by LPS, imaging of structural defects by X-ray topography, analysis of edge facets, determination of O, C, N by FTIR, minority carrier life time mappings, …)
  • Simulation of heat and mass transport phenomena for Cz, FZ and DS configurations including magnetic fields
© Anja Grabinger / Fraunhofer IISB
Silicon crystals are being grown in special R&D-furnaces.
© Fraunhofer IISB
Analysis of wetting behavior of silicon and other melts according to the sessile drop method.
© Fraunhofer THM
Analysis of physical, chemical, and electrical properties of silicon and other semiconductor materials.

IISB insights: Functional Coatings in 90 Seconds

Focus Areas

Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.