Equipment and processes for the production of crystalline bulk and layer materials for electronics, comprising silicon, wide-band-gap semiconductors (e.g., SiC, GaN), materials for optical applications, detectors, and energy technology.
Semiconductor technology lines, cleanroom infrastructure, metrology on Si and SiC for custom processes and prototype devices; nanotechniques, particle / thin-film systems.
Customer-specific active and passive electron devices on silicon and silicon carbide for application in power electronics, microelectronics, and sensors, including novel device concepts and development cost-efficient processes.
New methods and materials for packaging, cooling, lifetime and failure analysis, and reliability, analysis of failure mechanisms after lifetime and reliability tests, joining technologies, new packaging designs.
Efficient, compact, and robust power electronic systems for all kind of vehicles, comprising electric drives, battery systems, and charging infrastructure for electric cars, further applications in aviation and shipping.
Power electronic systems on all levels of power grid, e.g., electronic components for HV DC transport, local DC micro grids or integration of electrical storages and regenerative sources in the power grid.
Monitoring, Coupling and Management of electric and non-electric energies and development of necessary interfaces for implementing a sustainable energy infrastructure, especially for industry-size environments.
Fraunhofer Institute for Integrated Systems and Device Technology IISB