Silicon Carbide

Research Topics

In close collaboration with substrate, device and equipment manufacturers, we develop epitaxy processes and characterization methods for SiC power electronic devices. Our goals for SiC power electronics are improved material quality, understanding the impact of defects on device yield and reliability by using in-line characterization. Additionally, we explore new applications for SiC, e.g. as sensor material or for quantum electronic devices.

One of our approaches is to analyze structural defects in the substrates and epilayers during device processing and to clarify their influence on the performance and reliability of different SiC device types. Another research focus is the determination of point defects limiting the minority carrier lifetime and how to increase it during epitaxy and further device processing.

The experimental work is complemented by numerical simulation of the fluid dynamics, heat transfer, and species transport, including chemical reactions during SiC bulk and epitaxial growth processes.

 

© Intego GmbH / Fraunhofer IISB

Operator loading a 100 mm SiC epiwafer in a defect luminescence scanner at Fraunhofer IISB.

© Fraunhofer IISB

Analysis of electrical properties of SiC substrates by carrier lifetime measurements, deep level transient spectroscopy (DLTS).

© Fraunhofer IISB

Full wafer scale images of structural defects in various substrates up to 300mm diameter by x-ray topography.

Services

We offer n- and p-type service epitaxy on 4H-SiC wafers (up to 150mm) as well as processing of complete SiC prototype devices (e.g. Schottky, MOS, diodes).

Our equipment includes well-suited metrology tools and techniques for in-depth characterization of substrates and epilayers (e.g. x-ray topography, combined optical surface and photoluminescence imaging system, defect selective etching, carrier lifetime measurements, deep level transient spectroscopy (DLTS)). Furthermore, we correlate material defects with device performance and reliability along the whole device processing chain.

Additionally, we develop and apply numerical models of heat transfer and species transport (including chemical reactions) for SiC bulk growth, epitaxy, and other high temperature SiC specific processes (e.g. annealing, oxidation).

Individual SiC Services

 

 

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