In close collaboration with substrate, device and equipment manufacturers, we develop epitaxy processes and characterization methods for SiC power electronic devices. Our goals for SiC power electronics are improved material quality, understanding the impact of defects on device yield and reliability by using in-line characterization. Additionally, we explore new applications for SiC, e.g. as sensor material or for quantum electronic devices.
One of our approaches is to analyze structural defects in the substrates and epilayers during device processing and to clarify their influence on the performance and reliability of different SiC device types. Another research focus is the determination of point defects limiting the minority carrier lifetime and how to increase it during epitaxy and further device processing.
The experimental work is complemented by numerical simulation of the ﬂuid dynamics, heat transfer, and species transport, including chemical reactions during SiC bulk and epitaxial growth processes.