We develop the SiC epitaxy process with emphasis on improved material quality.
State of the art metrology tools such as UV-PL or XRT together with the possibility to process complete devices allows us to correlate the properties of the epilayer and the substrate with electrical device parameters. Based on the findings solutions are demonstrated how to overcome harmful defects.
In addition, the potential of SiC & diamond for quantum applications is explored. In this area, we investigate especially how color centers in SiC & diamond can be generated.