We contribute to the development of next-generation high-temperature equipment by numerical modeling of the heat and mass transport phenomena during processing. Our main focus is on crystal growth and epitaxy equipment for a variety of materials (Si, Ge, SiC, GaN, AlN, III-V, II-VI, halides, oxides).
Specific expertise is available for modeling heat and mass transport processes for the Czochralski and directional solidification of silicon, the Vertical Gradient Freeze method of compound semiconductors and halides, and the epitaxial growth of wide band semiconductors. The application of our numerical models covers also the tailored thermal treatment of semiconductor wafers and the enhancement of deposition rates in CVD applications.
Using our numerical models we provide solutions for furnace modifications in order to optimize our customers’ process equipment and we give valuable new insights into our customers’ processes, especially for parameters that are hardly accessible via measuring techniques like species concentrations in CVD reactors or the convection pattern in semiconductor melts.