We develop the HVPE growth of GaN bulk crystals up to 4“ diameter. The process is optimized towards a high uniform V/III ratio along the growing interface by comparing in-situ process data, ex-situ determined properties of the crystal with results from numerical modeling of the growth process. We pioneer the PVT growth of AlN crystals by using our unique N-face technology. The focus is on deeper understanding of growth mechanisms and upscaling towards 2” diameter. In our wafering line we explore advanced GaN and AlN crystal preparation technologies for epi-ready wafers. These wafers are used in our R&D clean room line to process prototype devices for fast feedback on material quality.