We develop the HVPE growth of GaN crystals. The process is optimized towards a high uniform V/III ratio along the growing interface by comparing in-situ process data, ex-situ determined properties of the crystal with results from numerical modeling of the growth process.
We pioneer the PVT growth of AlN crystals with the focus of deeper understanding of growth mechanisms and upscaling towards larger crystal diameters.
In our wafering line we explore advanced GaN and AlN crystal preparation and characterization technologies for epi-ready wafers.