GaN & AlN

We develop the HVPE growth of GaN crystals. The process is optimized towards a high uniform V/III ratio along the growing interface by comparing in-situ process data, ex-situ determined properties of the crystal with results from numerical modeling of the growth process.

We pioneer the PVT growth of AlN crystals with the focus of deeper understanding of growth mechanisms and upscaling towards larger crystal diameters.

In our wafering line we explore advanced GaN and AlN crystal preparation and characterization technologies for epi-ready wafers.

Services

• Growth of GaN and AlN crystals
• Simulation of heat and mass transport of the HVPE and PVT process
  Correlation of material defects with device performance and reliability, identification of device critical defects in nitrides
• Characterization of crystals and epitaxial structures (imaging of extended defects by x-ray topography, defect selective etching, cathodoluminescence, photoluminescence, Raman- and FTIR spectroscopy)
• Investigation of electrical properties of extended defects by conductive atomic force microscopy and electron beam induced current measurements and imaging techniques

http://www.inrel-npower.eu/