GaN & AlN

We develop the HVPE growth of GaN crystals. The process is optimized towards a high uniform V/III ratio along the growing interface by comparing in-situ process data, ex-situ determined properties of the crystal with results from numerical modeling of the growth process.

We pioneer the PVT growth of AlN crystals with the focus of deeper understanding of growth mechanisms and upscaling towards larger crystal diameters.

In our wafering line we explore advanced GaN and AlN crystal preparation and characterization technologies for epi-ready wafers.


© Fraunhofer IISB
XRT image of HVPE GaN sample
© Anja Grabinger / Fraunhofer IISB
Aluminium Nitride Crystal
© Fraunhofer IISB
AlN wafer



  • Growth of GaN and AlN crystals
  • Simulation of heat and mass transport of the HVPE and PVT process
    Correlation of material defects with device performance and reliability, identification of device critical defects in nitrides
  • Characterization of crystals and epitaxial structures (imaging of extended defects by x-ray topography, defect selective etching, cathodoluminescence, photoluminescence, Raman- and FTIR spectroscopy)
  • Investigation of electrical properties of extended defects by conductive atomic force microscopy and electron beam induced current measurements and imaging techniques
© Fraunhofer THM
Employee of Technology Center for Semiconductor THM Freiberg examines gallium nitride substrate.
© Fraunhofer IISB
Fraunhofer IISB is equipped with a wafering laboratory for cutting GaN & AlN crystals into wafers.
© Fraunhofer IISB
The epi ready quality of GaN & AlN wafers after grinding, polishing and cleaning is controlled in house by AlGaN epitaxy up to 1450°C.

Innovative Reliable Nitride based Power Devices and Applications

Fraunhofer IISB is partner in the large highly visible EU research initiative "InRel-Power"

Focus Areas

Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.