YESvGaN targets a new low-cost wide-bandgap (WBG) power transistor technology for enabling high-efficiency power electronic systems for electromobility, industrial drives, renewable energies, and data centers.
The main objective of the project is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. Within YESvGaN, the entire value chain is addressed – from substrate, epitaxy, process, and interconnect technology to applications in power electronic systems. The YESvGaN consortium combines the experience and competence of 23 industrial and research partners from 7 European countries.
Fraunhofer IISB contributes to the project along the entire value chain, including:
- Analysis of epitaxial layer stacks and crystal defects, development of innovative routines for measuring the electrical properties of defects and thin membranes
- Definition of new processes for handling of thin membranes during packaging and ceramic embedding
- Electrical characterization of novel power devices, development of an electrical simulation model, and design of a half-bridge power module