Spectroscopy and Test Devices

Based on a detailed, defect spectroscopic characterization of semiconductor materials (in particular GaN, SiC, AlGaN, AlN, GaAs, InP), test devices can be processed and characterized at an early stage of material development in collaboration with the Institute of Applied Physics at TU Bergakademie Freiberg. This enables a systematic correlation of the material properties with the resulting device properties and the identification of device-critical defects.

At the Fraunhofer IISB branch in Freiberg, customer-specific challenges for process development all the way to the design of test devices can be realized. In our flexible, fully CMOS-equipped cleanroom line, processes can be customized and material properties can be correlated with the performance of devices in order to identify critical material defects.

Key topics and competences

• Wide-Bandgap / Ultrawide-Bandgap based (test)devices
• Atomic layer processing: Atomic Layer Deposition (ALD) and Atomic Layer Etching (ALE)
• Device characterization using current-voltage and capacitance-voltage curves (IV/CV) as well as defects at the interface (D_it) and impurities in the bandgap using Deep Level Transient Spectroscopy (DLTS) and related methods

Services

• Customer-specific challenges in process development
• Development of device processing steps (ALD, ALE, passivation, etching, metallization)
• Single process evaluation using various test devices
• Support for single process technology development
• Customized design of test devices
• Identification of device-critical defects and their correlation to device properties and device characterization
• Electrical characterization of devices at wafer level by IV, CV measurements and determination of interface traps

The variability of semiconductor base materials for applications in power and communication electronics has increased rapidly in recent years. Compound semiconductors play a particularly important role in this area. These materials have physical properties that are superior to those of established silicon for these applications. In addition, defects in these materials are candidates for the realization of individual quantum states for future highly sensitive quantum sensors or ultra-powerful quantum computers.

We have in-depth expertise in characterizing the electrical properties of various crystal and wafer materials as well as partially and fully processed devices. On the one hand, this enables us to carry out service measurements for our customers within a short return time. On the other hand, we use this toolbox, in particular the ability to produce various test devices, to identify critical defects for the performance and reliability of the devices, to understand their origin and to find solutions together with our customers to avoid the critical defects.

Key topics and competences

• Semiconductor material characterization, especially electrical defect spectroscopy of crystals and epitaxial layers using:
  • DLTS, optical DLTS
  • IV and CV measurements