Operando and In-line Analysis

In recent years, the requirements regarding variability and functionality of semiconductor materials for applications in power and communication electronics have grown enormously. In this area, compound semiconductors play a significant role. These materials exhibit physical properties for such applications that are superior to those of established silicon. Furthermore, defects in these materials are candidates for realizing isolated quantum states for future highly sensitive quantum sensors or ultra-powerful quantum computers.

We have in-depth expertise in characterizing the optical, structural, physical, and chemical properties of various crystal and wafer materials. This allows us to carry out service measurements within a short turnaround time for our customers. The focus of our research is operando characterization, which refers to the investigation of (test) devices while in operation. Such measurements enable testing the performance and reliability of devices. By performing a comprehensive defect analysis at an early stage of material development, critical defects that may affect the reliability of the devices can be identified. Together with our customers, we find solutions for defect engineering.

In the context of research and services, we carry out material characterization of semiconductor materials, crystals, and epitaxial layers using optical defect spectroscopy.

Key topics:

• Micro-Raman spectroscopy
• Photoluminescence spectroscopy (PL)

Services:

• Photoluminescence (PL) imaging for qualitative mapping of lateral inhomogeneities of charge carriers or their interaction with extended defects (spatial resolution ≥ 2 µm, sample size ≤ 180 × 180 mm²)
• Confocal micro-Raman spectroscopy for monitoring mechanical residual stress and charge carrier density (spatial resolution ≥ 1 µm, sample size ≤ 100 × 100 mm²)
• Measurement of lateral photovoltage (LPS) to determine phase boundary profiles, for example, in Cz-Si (sample size ≤ 280 × 280 mm²)
  
• Fourier transform infrared (FTIR) spectroscopy for detecting concentrations of oxygen, carbon, and nitrogen dissolved in the silicon lattice (spatial resolution ≥ 15 µm, sample size ≤ 90 × 70 mm²)
• Development of customized measurement methods in collaboration with industry partners in the field of metrology.
  

In the context of research and services, we carry out structural characterization of crystals, substrates, epitaxial layers, and thin-film systems.

Key topics:

• Structural analysis using high-resolution X-ray diffraction (HRXRD) and X-ray reflectometry (XRR)
• Qualitative and quantitative phase analysis using powder X-ray diffraction (PXRD) and Rietveld analysis
• Microscopy: optical microscopy (VIS, NIR), confocal laser scanning microscopy (CLSM), scanning electron microscopy (SEM)
  

Services:

• Phase and elemental analysis
• Determination of lattice parameters and residual stress
• Development of customized measurement methods in collaboration with measurement device manufacturers
  

In the context of our research, we perform operando investigations on electronic (test) devices and in-line analytics of recycling processes. This involves the use of imaging optical, spectroscopic, and X-ray methods.

Key topics:

• Operando investigations on electronic devices and modules
• In-line process monitoring of recycling processes using (spectroscopic) imaging techniques
• Application and (further) development of AI-based evaluation algorithms
  

Services:

• Development and implementation of operando and in-line measurement techniques
• Thermochemical simulation for process understanding