Publications

2018

Author

Title

Journal

L. Shen, S. Müller, X. Cheng, D. Zhang, L. Zheng, D. Xu, Y. Yu, E. Meissner, T. Erlbacher The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM Superlattices and Microstructures 114 (2018) 200-206
L. Stockmeier, C. Kranert, G. Raming, A. Miller, C. Reimann, P. Rudolph, J. Friedrich Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method Journal of Crystal Growth 491 (2018) 57–65
B. Kallinger, D. Kaminzky, P. Berwian, J. Friedrich, S. Oppel Optical stressing of 4H-SiC material and devices Materials Science Forum Vol 924 (2018) 196-199
J. Erlekampf, D. Kaminzky, K. Rosshirt, B. Kallinger, M. Rommel, P. Berwian, J. Friedrich, L. Frey Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC Materials Science Forum Vol 924 (2018) 112-115
M. Shapouri Ghazvini,  G. Pulletikurthi, T. Cuia, C. Kuhl, F. Endres Electrodeposition of zinc from 1-ethyl-3-methylimidazolium acetate-water mixtures: Investigations on the applicability of the electrolyte for Zn-air batteries Journal of The Electrochemical Society 165 (9) (2018) D354-D363
J. Derluyn, M. Germain, E. Meissner Taking the next step in GaN: Bulk GaN substrates and GaN-on-Si epitaxy for electronics in Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion (Eds. G. Meneghesso, M. Meneghini, Matteo, E. Zanoni) Springer (2018) 1-28
G. Meneghesso, J. Derluyn, E. Meissner, F. Medjdoub, A. Banerjee, J. Naundorf, M. Rittner Pushing the limits of GaN-based power devices and power electronics Bodo´s Power Systems® 8 (2018) 52-55

2017

Author

Title

Journal

M. Trempa, I. Kupka, C. Kranert, T. Lehmann, C. Reimann, J. Friedrich Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots Journal of Crystal Growth 459 (2017) 67–75
T. Sorgenfrei, T. Jauß, J. Friedrich, C. Reimann, A. Cröll The Critical Growth Rate for Particle Incorporation during the Directional Solidification of Solar Silicon under Microgravity Int. J. Microgravity Sci. Appl., 34 (1) (2017) 340115
I. Kupka, T. Lehmann, M. Trempa, C. Kranert, C. Reimann, J. Friedrich Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots Journal of Crystal Growth 465 (2017) 18–26
M. Trempa, I. Kupka, C. Kranert, C. Reimann, J. Friedrich HPM silicon: The next generation of multicrystalline silicon for PV Photovoltaics International 35/04 (2017) 36-41
D. Oriwol, M. Trempa, L. Sylla, H. S. Leipner Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon Journal of Crystal Growth 463 (2017) 1–9
J. J. Derby, Y. Tao, C. Reimann, J. Friedrich, T. Jauß, T. Sorgenfrei, A. Cröll A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth Journal of Crystal Growth 463 (2017) 100–109
J. Kundin, H. Emmerich, H. Aufgebauer, J. Friedrich, C. Reimann, A. Cröll, T. Jauß, T. Sorgenfrei Dynamic modeling of critical velocities for the
pushing/engulfment transition in the Si-SiC system under gravity conditions
Metallurgical and Materials Transactions A 48A (2017) 342-353
Y. Tao, T. Sorgenfrei, T. Jauß,  A. Cröll, C. Reimann, J. Friedrich, J. J. Derby Particle engulfment dynamics under oscillating crystal growth conditions Journal of Crystal Growth 468 (2017) 24–27
L. Stockmeier , L. Lehmann, A. Miller, C. Reimann, J. Friedrich Dislocation formation in heavily As-doped Czochralski grown silicon Cryst. Res. Technol. 1600373 (2017), 1-6
J. Friedrich, C. Reimann, T. Jauss, A. Cröll, T. Sorgenfrei, Y. Tao, J.J. Derby Engulfment and pushing of Si3N4 and SiC particles during directional solidification of silicon under microgravity conditions Journal of Crystal Growth 475 (2017) 33–38
R. Belitz, P. Meisner, M. Coeler, U. Wunderwald, J. Friedrich, J. Zosel, M. Schelter, S. Jachalke, E. Mehner Waste Heat Energy Harvesting by use of BaTiO3 for Pyroelectric Hydrogen Generation Energy Harvesting and Systems: Materials, Mechanisms, Circuits and Storage 4/3 (2017);  DOI: https://doi.org/10.1515/ehs-2016-0009.
E. Meissner, M. Haeckel, J. Friedrich A Practical Example of GaN-LED Failure Cause Analysis by Application of Combined Electron Microscopy Techniques Materials 2017 (10) 1202; doi:10.3390/ma10101202
T. Luka, M. Turek, C. Kranert, S. Großer, C. Hagendorf Microstructural investigation of LID sensitive mc-PERC solar cells Energy Procedia 124 (2017) 759-766
A. Bauer, E. Bär, T. Erlbacher, J. Friedrich, J. Lorenz, M. Rommel, M. Schellenberger Elektronik in Angewandte Nanotechnologie - Beispiele aus der Fraunhofer-Allianz Nanotechnologie
(Hrsg.: Karl-Heinz Haas, Günter Tovar), Fraunhofert Verlag (2018) 98-115
J. Laurent, G. Rancoule, E.Drode, C. Reimann, M. Trempa, C. Kranert, J.Friedrich, L.Teale, R. Dyer, I.Dorrity Properties of multi-crystalline silicon ingot grown by self-nucleating crucible Proceedings of 33th European Photovoltaic Solar Energy Conference and Exhibition (2017) 305-308
M. Trempa, M. Hinderer, I. Kupka, C. Reimann, J. Friedrich, P. Czurratis In-situ measurement of the solid-liquid interface during the growth of silicon ingots by the ultrasonic sound method Proceedings of 33th European Photovoltaic Solar Energy Conference and Exhibition (2017) 491-494

2016

Author

Title

Journal

C. Reimann, M. Trempa, T. Lehmann, K. Rosshirt, J.Stenzenberger, J. Friedrich, K. Hesse, E. Dornberger Influence of different seed materials on multi crystalline silicon ingot properties Journal of Crystal Growth 434 (2016) 88–95
J. Friedrich Methods for Bulk Growth of Inorganic Crystals: Crystal Growth in Reference Module in Materials Science and Materials Engineering (Editor-in-Chief: Saleem Hashmi),  Oxford, Elsevier (2016) 1-16
T. Lehmann, C. Reimann, E. Meissner, J. Friedrich Clarification of the relation between the grain structure of industrial
grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation
Acta Materialia 106 (2016) 98-105
V. Schneider, C. Reimann, J. Friedrich Wetting and infiltration of nitride bonded silicon nitride by liquid silicon Journal of Crystal Growth 440 (2016) 31–37
H. Aufgebauer, J. Kundin, H. Emmerich, M. Azizi, C. Reimann, J. Friedrich, T. Jauß, T. Sorgenfrei, A. Cröll Phase-field simulations of particle capture during the directional solidification of silicon Journal of Crystal Growth 446 (2016) 12–26
J. Friedrich, C. Reimann, T.Jauss, A.Cröll, T.Sorgenfrei Interaction of SiC particles with moving solid–liquid interface during directional solidification of silicon Journal of Crystal Growth 447 (2016) 18–26
M. Trempa, M.Beier, K. Roßhirth, C. Reimann, J. Friedrich, L. Sylla, T. Richter Dislocation formation in seed crystals by feedstock indentation during growth of quasi mono crystalline silicon ingots Journal of Crystal Growth 454 (2016) 6–14
M. Knetzger, E. Meissner, J. Derluyn, M. Germain, J. Friedrich Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics Microelectronics Reliability 66 (2016) 16–21
D. Kaminzky, B. Kallinger, P. Berwian, M. Rommel, J. Friedrich Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers Materials Science Forum  Vol. 858 (2016) 341-344
J. Hertrampf, N. Alt, E. Schlücker, M. Knetzger, E. Meissner, R.Niewa Ammono thermal synthesis of GaN using Ba(NH2)2 as mineralizer Journal of Crystal Growth 456 (2016) 2–4
L. Wehrhahn-Kilian, K. Dohnke, D. Kaminzky, B. Kallinger, S. Oppel Bipolar degradation of 6.5 kV SiC pn-diodes: result prediction by photoluminescence Materials Science Forum  Vol. 858 (2016) 410-413
L. Stockmeier, M. Elsayed, R. Krause-Rehberg, M. Zschorsch, L. Lehmann, J. Friedrich Electrically inactive dopants in heavily doped as-grown Czochralski silicon Solid State Phenomena Vol. 242 (2016) 10-14
M. Knetzger, E. Meissner, J. Derluyn, M. Germain, J. Friedrich Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices Solid State Phenomena Vol. 242 (2016) 417-420
P. Berwian, D. Kaminzky, K. Roßhirt, B. Kallinger, J. Friedrich, S. Oppel, A. Schneider, M. Schütz Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence Solid State Phenomena Vol. 242 (2016) 484-489
M. Herms, M. Wagner, A. Molchanov, M. Rommel, M. Zschorsch, S. Wuerzner Comparative spatially resolved characterization of a Czochralski-grown silicon crystal by different laser-based imaging techniques Solid State Phenomena Vol. 242 (2016) 478-483
C. Kranert, C. Sturm, R. Schmidt-Grund, M. Grundmann Raman tensor elements of β-Ga2O3 Nature, Scientific Reports | 6:35964 | (2016) DOI: 10.1038/srep35964
M. Widenmeyer, L. Shlyk, N. Becker, R. Dronskowski, E. Meissner, R. Niewa Synthesis of metastable Co4N, Co3N, Co2N, and CoO0.74N0.24 from a single azide precursor and intermediates in CoBr2 ammonolysis European Journal of Inorganic Chemistry (2016) 4792–4801
A. Le Donne, M. Acciarri, C. Reimann, J. Friedrich, T. Jauss, A. Cröll, T. Sorgenfrei, S. Binetti Impurities and defects distrubution during the growth of PV silicon: Influence of melt convection and gravity Proceedings of 32nd European Photovoltaic Solar Energy Conference and Exhibition (2017) 1025-1028

2015

Author

Title

Journal

J. Hanzig, E. Mehner, S. Jachalke, F. Hanzig, M. Zschornak, C. Richter, T. Leisegang, H. Stocker, D. C. Meyer Dielectric to pyroelectric phase transition induced by defect migration New J. Phys. 17 (2015) 023036
C. Reimann, M. Lang, V. Schneider, J. Friedrich Influence of atmospheric conditions and substrate porosity on the stability of Si3N4-based crucible coatings Proceedings of 31st European Photovoltaic Solar Energy Conference and Exhibition (2015) 605-609
R. Søndenå , K. E. Ekstrøm, G. Stokkan, H. Dalaker, T. Lehmann, L. Arnberg, M. D. Sabatino EFFECT OF PHOSPHORUS GETTERING ON QUASI-SINGLE-CRYSTALLINE SILICON WAFERS Proceedings of 31st European Photovoltaic Solar Energy Conference and Exhibition (2015) 571- 574
V. Schneider, C. Reimann, M. Kuczynski, J. Sans, W. Gross, J. Friedrich Development of an industrial applicable crucible coating based on high pure Silzot® SQ Si3N4 powder Proceedings of 31st European Photovoltaic Solar Energy Conference and Exhibition (2015) 307 - 311
J. Seebeck, P. Savva, J. Erlekampf, E. Meissner, J. Friedrich, L. Frey Species transport by natural convection of supercritical ammonia Proc. of 8th Int. Symp. on Turbulence, Heat and Mass Transfer, Sarajevo, Bosnia and Herzegovina, 15 – 18 September (2015)
M. Fuegl, G. Mackh, E. Meissner, L. Frey Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips Proceedings of Electronic Components and Technology Conference (ECTC) , San Diego, 26 - 29 May (2015) 214-219
Y. Kangawa, H. Suetsugu, M. Knetzger, E. Meissner, K. Hazu, S. F. Chichibu, T. Kajiwara, S. Tanaka, Y. Iwasaki, K. Kakimoto Structural and optical properties of AlN grown by solid source solution growth method Japanese Journal of Applied Physics 54 (2015) 08550
K. E. Ekstrøm, G. Stokkan, R. Søndenå, H. Dalaker, T. Lehmann, L. Arnberg, M. Di Sabatino Structure and dislocation development in mono-like silicon Phys. Status Solidi A, 1–11 (2015)
V. Schneider, C. Reimann, J. Friedrich, G. Müller Nitride bonded silicon nitride as a reusable crucible material for directional solidification of silicon Cryst. Res. Technol. 51/1 (2016) 74-86
M. Trempa, C. Reimann, J. Friedrich, G. Müller, L. Sylla, A. Krause, T. Richter Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots Journal of Crystal Growth 429 (2015) 56-62  
K. Semmelroth, P. Berwian, C. Schröter, G. Leibigec, M. Schönleber, J. Friedric Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN Journal of Crystal Growth 27 (2015) 99–103
C. Reimann, J. Friedrich, E. Meissner, D. Oriwol, L. Sylla Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon Acta Materialia 93 (2015) 129–137
C. Bayer, E. Bär, Birgit Kallinger, P. Berwian Thermal Simulation of Paralleled SiC PiN Diodes in a Module Designed for 6.5 kV/1 kA Materials Science Forum Vols 821-823 (2015) 616-619
M. Trempa, C. Reimann, J. Friedrich, G. Mueller, A. Krause, L. Sylla, T. Richter Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots Cryst. Res. Technol. 50, No. 1 (2015) 124–132
D. Klimm, J. Friedrich Guest Editors' Preface Cryst. Res. Technol. 50, No. 1 (2015) 1

2014

Author

Title

Journal

W. von Ammon, J. Friedrich, G. Müller Czochralski Growth of Silicon Crystals in: Handbook of Crystal Growth 2nd Edition (Eds: T. Nishinaga, P. Rudolph, T. Kuech), Elsevier (2014) 45-104
M. Beier, M. Trempa, J. Seebeck, C. Reimann, P. Wellmann, B. Gründig-Wendrock, J. Friedrich, K. Dadzis, L. Sylla, T. Richter Feedstock recharging during directional solidification of silicon ingots for PV applications Proceedings of 29th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC 2014), Amsterdam, September 22-26, 2014 (2014) 717-721
J. Hanzig, M. Nentwich, F. Hanzig, M. Zschornak, T. Leisegang, S. Gemming, D.C. Meyer Strontiumtitanate: An all in one rechargeable battery material J. Power Sources 267 (2014) 700
T. Nestler, R. Schmid, W. Munchgesang, V. Bazhenov, J. Schilm, T. Leisegang, D. C. Meyer Separators-–-Technology-Review:Ceramic based Separators for Secondary-Batteries AIP Conference Proceedings 1597 (2014) 155-184
D. C. Meyer, T. Leisegang Preface: 1st International Freiberg Conference on Electrochemical Storage Materials, 3rd - 4th June 2013 in Freiberg, Germany AIP Conference Proceedings 1597 (2014) 1–2
M. Wysokowski, M. Motylenko, J. Walter, G. Lota, J. Wojciechowski, H. Stocker, R. Galli, A. L. Stelling, C. Himcinschi, E. Niederschlag, E. Langer, V. V. Bazhenov, T. Szatkowski, J. Zdarta, I. Pertenko, Z. Kljajic, T. Leisegang, S. L. Molodtsov, D. C. Meyer, T. Jesionowskia, H. Ehrlich Synthesis of nanostructured chitin7 hematite composites under extreme biomimetic conditions RSC Adv. 4 (2014) 61743
E.‐R. Carl, A. Danilewsky, E. Meissner, T. Geiger Large‐ and small‐angle grain boundaries in multi‐crystalline silicon and implications for the evolution of grain boundaries during crystal growth Journal of Applied Crystallography (2014) 47
M. Widenmeyer, E. Meissner, A. Senyshyn, R. Niewa On the Formation Mechanism of Chromium Nitrides: An in situ Study Zeitschrift für anorganische und allgemeine Chemie Volume 640, Issue 14 (2014) 2801–2808
M. Fuegl,  G. Mackh, E. Meissner, L. Frey Analytical stress characterization after different chip separation methods Microelectronics Reliability 54 (2014) 1735-1740
M. Trempa, C. Reimann, J. Friedrich, G. Müller, A. Krause, L. Sylla, T. Richter Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots Journal of Crystal Growth 405 (2014), pp. 131-141
S. Sintonen, M. Rudziski, S. Suihkonen, H. Jussila, M. Knetzger, E. Meissner, A. Danilewsky, T. O. Tuomi, H. Lipsanen Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN Journal of Applied Physics 116 (2014), 083504
S. Krukowski, R. Fornari, Z. R. Zytkiewicz, J. Friedrich Editorial - Chairpersons' preface  Journal of Crystal Growth 401 (2014), pp. 1-3 
M. Widenmeyer, T. C. Hansen, E. Meissner, R. Niewa Formation and Decomposition of Iron Nitrides Observed by in situ Powder Z. Anorg. Allg. Chem. 640, (7) (2014), pp. 1265-1274
J. Erlekampf, J. Seebeck, P. Savva, E. Meissner, J. Friedrich, N.S.A. Alt, E. Schlücker, L. Frey Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes  Journal of Crystal Growth 403 (2014), pp. 96-104 
J. A.Freitas, E. Meissner, T. Paskova, H. Miyake Preface: 8th “International Workshop on Bulk Nitride Semiconductors” (IWBNS-VIII) Journal of Crystal Growth 403 (2014) 1–2
L. Stockmeier, G. Müller, A. Seidl, T. Lehmann, C. Reimann, J. Friedrich  Preferred Grain Orientations in Silicon Ribbons Grown by the String Ribbon and the Edge-defined Film-fed Growth Methods  Journal of Crystal Growth 395 (2014), pp. 74-79 
T. Lehmann, M. Trempa, E. Meissner, M. Zschorsch, C. Reimann, J. Friedrich  Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale  Acta Materialia 69 (2014), pp. 1-8 
B. Kallinger, M. Rommel, L. Lilja, J. Hassan, I. Booker, E. Janzen, P. Bergman  Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminescence and μ-PCD  Materials Science Forum Vols. 778-780 (2014), pp. 301-304 
B. Kallinger, C. Ehlers, P. Berwian, M. Rommel, J. Friedrich  HCl assisted growth of thick 4H-SiC epilayers for bipolar devices  Materials Science Forum Vols. 778-780 (2014), pp. 210-213 

2013

Author

Title

Journal

D. M. Cupid, T. Lehmann, T. Bergfeldt, H. Berndt, H. J. Seifert Investigation of the lithium-rich boundary of the Li1+xMn22xO4 cubic spinel phase in air  J. Mater. Sci. 48 (2013), pp. 3395-3403
P. Karzel, M. Ackermann, L. Gröner, C. Reimann, M. Zschorsch, S. Meyer, G. Hahn  Dependence of POCl3 Gettering and Hydrogen Passivation Efficacy on Grain Boundary Type in multicrystalline Silicon  Proceedings of 28th European Photovoltaic Solar Energy Conference and Exhibition, Paris, September 30 – October 4 (2013), pp. 895-901 
B. Kallinger, S. Polster, P. Berwian, J. Friedrich, A. N. Danilewsky Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates J. Appl. Phys. 114 (2013),  183507
D. Vizman, K. Dadzis, J. Friedrich Numerical parameter studies of 3D melt flow and interface shape for directional solidification of silicon in a traveling magnetic field Journal of Crystal Growth 381 (2013), pp. 169-178
B. Kallinger, P. Berwian, J. Friedrich, B. Thomas Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates Journal of Crystal Growth 381 (2013), pp. 127-133
J. Friedrich, L. Stockmeier, G. Müller Constitutional Supercooling in Czochralski Growth of Heavily Doped Silicon Crystals Acta Physica Polonica A Vol. 124/2 (2013), pp. 219-226
Y. Zorenko, K. Fabisiak, T. Zorenko, A. Mandowski, Q., M. Batentschuk, J. Friеdrich, G. Zhusupkalieva Comparative study of the luminescence of Al2O3:C and Al2O3 crystals under synchrotron radiation excitation Journal of Luminescence 144 (2013), pp. 41-44
K. Dadzis, K. Niemietz, O. Pätzold, U. Wunderwald, J. Friedrich Non-isothermal model experiments and numerical simulations for directional solidification of mult icrystalline silicon in a traveling magnetic field Journal of Crystal Growth 372 (2013), pp. 145-156
T. Jung , J. Seebeck , J. Friedrich Combined global 2D-local 3D modeling of the industrial Czochralski silicon crystal growth process Journal of Crystal Growth 368 (2013), pp. 72-80
K. Dadzis, D. Vizman, J. Friedrich Unsteady coupled 3D calculations of melt flow,interface shape, and species transport for directional solidification of silicon in a traveling magnetic field Journal of Crystal Growth 367 (2013), pp. 77-87
B. Kallinger, P. Berwian, J. Friedrich, C. Hecht, D. Peters, P. Friedrichs, B. Thomas SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV Materials Science Forum Vols. 740-742 (2013), pp. 899–902
B. Kallinger, P. Berwian, J. Friedrich, M. Rommel, M. Azizi, C. Hecht, P. Friedrichs Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC Materials Science Forum Vols. 740-742 (2013), pp. 633-636

2012

Author

Title

Journal

J. Friedrich, G. Müller Kristallmaterialien – Schlüsselwerkstoffe für Zukunftstechnologien "Fokus Technologiemarkt: Technologiepotenziale identifizieren – Marktchancen realisieren" (Hrsg. Hans-Jörg Bullinger), Carl Hanser Verlag, München (2012)
C. Reimann, G. Mueller, J. Friedrich, K. Lauer, A. Simonis, H. Waetzig, S. Krehan, R. Hartmann, A. Kruse Systematic characterization of multi-crystalline silicon String Ribbon wafer Journal of Crystal Growth 361 (2012), pp. 38-43
M. Rumler,M. Rommel, J. Erlekampf, M. Azizi, T. Geiger, A. Bauer, E. Meißner, L. Frey Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy JOURNAL OF APPLIED PHYSICS 112, 034909 (2012)
M. Azizi , E. Meissner, J. Friedrich Considerations on the effect of interstitial and precipitated Fe in intentionally Fe-doped mc-Silicon Materials Science Forum Vol. 725 (2012), pp. 145-148
M. Trempa, C. Reimann, J. Friedrich, G. Müller, D. Oriwol Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals Journal of Crystal Growth 351 (2012), pp. 131-140
N. S. A. Alt, E. Meissner, E. Schluecker  In situ monitoring technologies for ammonothermal reactors Journal of Crystal Growth 350 (2012), pp. 2-4
N. S. A. Alt, E. Meissner, E. Schluecker In situ monitoring technologies for ammonothermal reactors  Phys. Status Solidi C 9, No. 3–4 (2012), pp. 436-439
B. Kallinger, P. Berwian, J. Friedrich , G. Müller, A. Weber, E. Volz, G. Trachta, E. Spiecker, B. Thomas Doping induced lattice misfit in 4H–SiC homoepitaxy  Journal of Crystal Growth 349 (2012), pp. 43-49
T. Erlbacher, M. Bickermann, B. Kallinger, E. Meissner, A. Bauer, and L. Frey  Ohmic and rectifying contacts on bulk AlN for radiation detector applications  Phys. Status Solidi C 9 No. 3–4 (2012), pp. 968-971 
A. V. Denisov, A. Molchanov, Y. O. Punin, Y. M. Krymov, G. Müller, J. Friedrich  Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique  Journal of Crystal Growth 344 (2012), pp. 38-44 
E. Meissner, S. Schweigard, J. Friedrich T. Paskova, K. Udwary, G. Leibiger, F. Habel  Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN  Journal of Crystal Growth, Volume 340, Issue 1, 1 February 2012, pp. 78-82 

2011

Author

Title

Journal

C. Tanasie, D.Vizman, J. Friedrich Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingots Journal of Crystal Growth 318 (2011), pp. 293-297
K. Dadzis, J. Ehrig, K. Niemietz, O. Pätzold, U. Wunderwald, J. Friedrich Model experiments and numerical simulation for directional solidification of silicon in a traveling magnetic field Pamir Conference proceeding submitted
J. Friedrich, G. Müller Kristalle - Wunderwerkstoffe für die Industrie "Technologisch! Technologien erfolgreich in den Markt bringen" (Editor : Bullinger, Hans-Jörg:), LOG_X Verlag GmbH, Ludwigsburg (2011), pp. 105-118
K. Dadzis, M. Zschorsch, U. Wunderwald, T. Jung, J. Friedrich Three-dimensional modelling of melt flow in directional solidification of large multi-crystalline silicon ingots with a travelling magnetic field Journal of Crystal Growth 333 (2011), pp. 7-15
B. Kallinger, B. Thomas, P. Berwian, J. Friedrich, GG. Trachta, A.-D. Weber 4H-SiC homoepitaxial growth on substrates with different off-cut directions Materials Science Forum Vols. 679-680 (2011), pp. 55-58
R. Bakowskie, K. Petter, S. Eiternick, D. Lausch, G. Müller Efficient methods for detection of SiC and Si3N4 precipitates and filaments in multi-crystalline silicon wafers and solar cells  Phys. Status Solidi C 8, No. 4, 1380-1383 (2011) 
M. Azizi, E. Meissner, J. Friedrich, G. Müller  Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates  Journal of Crystal Growth 322 (2011), pp. 74-77 
B. Kallinger, S. Polster, P. Berwian, J. Friedrich, G. Mueller, A. Danilewsky, A. Wehrhahn, A.-D. Weber  Dislocation Types and Densities of 4H-SiC Substrates and Homoepitaxial Layers Analyzed by Etching and Synchrotron X-Ray Topography  Journal of Crystal Growth 314 (2011), pp. 21-29