Fraunhofer Institute for Integrated Systems and Device Technology IISB
GaN Vertical Power Transistors at Silicon Cost
YESvGaN targets a new low-cost wide-bandgap (WBG) power transistor technology for enabling high-efficiency power electronic systems for electromobility, industrial drives, renewable energies, and data centers.
The main objective of the project is to demonstrate innovative vertical gallium nitride (GaN) power transistors fabricated on a low-cost substrate such as silicon. This so-called vertical membrane architecture combines the superior performance of GaN as WBG power transistor material with the advantages of a vertical architecture regarding current and voltage robustness at a price competitive to silicon IGBTs. Within YESvGaN, the entire value chain is addressed – from substrate, epitaxy, process, and interconnect technology to applications in power electronic systems. The YESvGaN consortium combines the experience and competence of 23 industrial and research partners from 7 European countries.
