Publikationen

2022

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2022	Homoepitaxial Growth of 4H-SiC on Vicinal Substrates Kallinger, Birgit	Aufsatz in Buch Book Article
2022	Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence Babin, C.; Stöhr, R.; Morioka, N.; Linkewitz, T.; Steidl, T.; Wörnle, R.; Liu, D.; Hesselmeier, E.; Vorobyov, V.; Denisenko, A.; Hentschel, M.; Gobert, C.; Berwian, P.; Astakhov, G.V.; Knolle, W.; Majety, S.; Saha, P.; Radulaski, M.; Son, N.T.; Ul-Hassan, J.; Kaiser, F.; Wrachtrup, J.	Zeitschriftenaufsatz Journal Article

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2021

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2021	Facet growth and geometry of the growth ridge during dynamic Czochralski processes Kranert, C.; Raming, G.; Miller, A.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Metal contamination of silicon from the furnace atmosphere after crystallization Kranert, C.; Trempa, M.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Influence of crucible properties and Si3N4-coating composition on the oxygen concentration in multi-crystalline silicon ingots Schwanke, S.; Trempa, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Heitmann, J.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Assessment of residual melt removal as approach to reduce the top redzone of cast silicon ingots Kranert, C.; Ghosh, M.; Hamacher, M.; Bähr, T.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	A Low-Cost Al-Graphite Battery with Urea and Acetamide-Based Electrolytes Jach, F.; Wassner, M.; Bamberg, M.; Brendler, E.; Frisch, G.; Wunderwald, U.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Numerical forecast of redzone extension in cast silicon ingots in dependence on the purity level of crucible, coating and feedstock Schwanke, S.; Trempa, M.; Schuck, K.; Kranert, C.; Müller, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Stenzenberger, J.; Hesse, K.; Heitmann, J.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Current Status of Carbon-Related Defect Luminescence in GaN Zimmermann, F.; Beyer, J.; Röder, C.; Beyer, F.C.; Richter, E.; Irmscher, K.; Heitmann, J.	Zeitschriftenaufsatz Journal Article
2021	The long journey from crystal growth to power devices, the role of material development for III-nitride semiconductors Meissner, E.; Besendörfer, S.; Faraji, S.; Bahat-Treidel, E.; Würfl, J.	Konferenzbeitrag Conference Paper
2021	Verfahren zur Reduzierung von strukturellen Beschädigungen an der Oberfläche von einkristallinen Aluminiumnitrid-Substraten und derart herstellbare einkristalline Aluminiumnitrid-Substrate Epelbaum, Boris; Müller, Stephan; Meißner, Elke	Patent
2021	High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste Liu, Z.; Zhang, Q.; Wolff, U.; Blum, C.G.F.; He, R.; Bahrami, A.; Beier-Ardizzon, M.; Reimann, C.; Friedrich, J.; Reith, H.; Schierning, G.; Nielsch, K.	Zeitschriftenaufsatz Journal Article
2021	A New Perspective on Growth of GaN from the Basic Ammonothermal Regime Meissner, E.; Jockel, D.; Koch, M.; Niewa, R.	Aufsatz in Buch Book Article
2021	Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals Hirsch, A.; Schulze, M.; Sturm, F.; Trempa, M.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2021	Lifetime limiting defects in 4H-SiC epitaxial layers: The influence of substrate originated defects Erlekampf, Jürgen; Rommel, Mathias; Rosshirt-Lilla, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias	Zeitschriftenaufsatz Journal Article
2021	Physically-based, lumped-parameter models for the prediction of oxygen concentration during Czochralski growth of silicon crystals Wang, K.; Koch, H.; Trempa, M.; Kranert, C.; Friedrich, J.; Derby, J.J.	Zeitschriftenaufsatz Journal Article
2021	X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks Rafaja, D.; Fischer, P.; Barchuk, M.; Motylenko, M.; Röder, C.; Besendörfer, S.; Meissner, E.	Zeitschriftenaufsatz Journal Article
2021	Ammonothermal Materials Schnick, W.; Cordes, N.; Mallmann, M.; Niewa, R.; Meissner, E.	Aufsatz in Buch Book Article
2021	A carbon-doping related luminescence band in GaN revealed by below bandgap excitation Zimmermann, F.; Beyer, J.; Beyer, F.C.; Gärtner, G.; Gamov, I.; Irmscher, K.; Richter, E.; Weyers, M.; Heitmann, J.	Zeitschriftenaufsatz Journal Article
2021	Preface Meissner, E.; Niewa, R.	Aufsatz in Buch Book Article
2021	Doping-related photoluminescence spectroscopy in 4H-SiC Kallinger, Birgit; Schlichting, Holger; Kocher, Matthias; Rommel, Mathias; Berwian, Patrick	Poster

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2020

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2020	Impact of different SiO2 diffusion barrier layers on lifetime distribution in multi-crystalline silicon ingots Trempa, M.; Sturm, F.; Kranert, C.; Schwanke, S.; Reimann, C.; Friedrich, J.; Schenk, C.	Zeitschriftenaufsatz Journal Article
2020	High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications Tajalli, A.; Meneghini, M.; Besendörfer, S.; Kabouche, R.; Abid, I.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.	Zeitschriftenaufsatz Journal Article
2020	X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals Wicht, T.; Müller, S.; Weingartner, R.; Epelbaum, B.; Besendörfer, S.; Bläß, U.; Weisser, M.; Unruh, T.; Meissner, E.	Zeitschriftenaufsatz Journal Article
2020	Verfahren und Tiegel zur Herstellung von partikel- und stickstoff-freien Silicium-Ingots mittels gerichteter Erstarrung, Silicium-Ingot und die Verwendung des Tiegels Reimann, Christian; Trempa, Matthias; Schwanke, Stanislaus; Kranert, Christian; Friedrich, Jochen	Patent
2020	Characterization of Silicon Crystals Grown from Melt in a Granulate Crucible Dadzis, K.; Menzel, R.; Juda, U.; Irmscher, K.; Kranert, C.; Müller, M.; Ehrl, M.; Weingärtner, R.; Reimann, C.; Abrosimov, N.; Riemann, H.	Zeitschriftenaufsatz Journal Article
2020	Solid state diffusion of metallic impurities from crucible and coating materials into crystalline silicon ingots for PV application Sturm, F.; Trempa, M.; Schwanke, S.; Schuck, K.; Kranert, C.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2020	Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure Abid, I.; Kabouche, R.; Medjdoub, F.; Besendörfer, S.; Meissner, E.; Derluyn, J.; Degroote, S.; Germain, M.; Miyake, H.	Konferenzbeitrag Conference Paper
2020	Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures Besendörfer, S.; Meissner, E.; Zweipfennig, T.; Yacoub, H.; Fahle, D.; Behmenburg, H.; Kalisch, H.; Vescan, A.; Friedrich, J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2020	Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias	Konferenzbeitrag Conference Paper
2020	The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors Besendörfer, S.; Meissner, E.; Medjoub, F.; Derluyn, J.; Friedrich, J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2020	Vertical breakdown of GaN on Si due to V-pits Besendörfer, S.; Meissner, E.; Tajalli, A.; Meneghini, M.; Freitas, J.A.; Derluyn, J.; Medjdoub, F.; Meneghesso, G.; Friedrich, J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2020	Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment Tajalli, A.; Borga, M.; Meneghini, M.; Santi, C.D.; Benazzi, D.; Besendörfer, S.; Püsche, R.; Derluyn, J.; Degroote, S.; Germain, M.; Kabouche, R.; Abid, I.; Meissner, E.; Zanoni, E.; Medjdoub, F.; Meneghesso, G.	Zeitschriftenaufsatz Journal Article
2020	Investigation of gas bubble growth in fused silica crucibles for silicon Czochralski crystal growth Hirsch, A.; Trempa, M.; Kupka, I.; Schmidtner, L.; Kranert, C.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2020	Stress evolution in thick GaN layers grown by HVPE Lukin, G.; Meissner, E.; Friedrich, J.; Habel, F.; Leibiger, G.	Zeitschriftenaufsatz Journal Article
2020	In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal Faraji, S.; Meissner, E.; Weingärtner, R.; Besendörfer, S.; Friedrich, J.	Zeitschriftenaufsatz Journal Article

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2019

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2019	Theoretical aspects and microstructural investigations on V-pit defects in HVPE grown GaN Knetzger, M.; Meissner, E.; Schröter, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2019	Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices Besendörfer, S.; Meissner, E.; Lesnik, A.; Friedrich, J.; Dadgar, A.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2019	Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method Stockmeier, Ludwig; Kranert, Christian; Fischer, Peter; Epelbaum, Boris; Reimann, Christian; Friedrich, Jochen; Raming, Georg; Miller, Alfred	Zeitschriftenaufsatz Journal Article
2019	Corrigendum to "Particle engulfment dynamics under oscillating crystal growth conditions" [J. Crystal Growth 468 (2017) 24-27] Tao, Y.; Sorgenfrei, T.; Jauß, T.; Cröll, A.; Reimann, C.; Friedrich, J.; Derby, J.J.	Zeitschriftenaufsatz Journal Article
2019	Silicon waste from the photovoltaic industry - A material source for the next generation battery technology? Beier, M.; Reimann, C.; Friedrich, J.; Peuker, U.A.; Leißner, T.; Gröschel, M.; Ischenko, V.	Konferenzbeitrag Conference Paper
2019	Wässrige Suspension enthaltend Metallcarbid-Partikel Schwanke, Stanislaus; Müller, Stephan; Meißner, Elke; Epelbaum, Boris; Friedrich, Jochen; Reimann, Christian; Becker, Lucas	Patent
2019	Tiegel zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung, Verfahren zu dessen Herstellung und dessen Verwendung, sowie Verfahren zur Herstellung von multikristallinem Silicium mittels gerichteter Erstarrung Schwanke, Stanislaus; Reimann, Christian; Kuczynski, Maciej; Sans, Jürgen; Hoislbauer, Christoph; Friedrich, Jochen; Schroll, Georg	Patent
2019	Verfahren zur Herstellung von Kristallmaterialien Friedrich, Jochen; Stockmeier, Ludwig; Wunderwald, Ulrike	Patent
2019	Heteroepitaxial growth of GaN on sapphire substrates by high temperature vapor phase epitaxy Lukin, G.; Schneider, T.; Förste, M.; Barchuk, M.; Schimpf, C.; Röder, C.; Zimmermann, F.; Niederschlag, E.; Pätzold, O.; Beyer, F.C.; Rafaja, D.; Stelter, M.	Zeitschriftenaufsatz Journal Article
2019	Evaluation of improvement strategies of grain structure properties in high performance multi-crystalline silicon ingots Trempa, M.; Kranert, C.; Kupka, I.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2019	Considerations on the limitations of the growth rate during pulling of silicon crystals by the Czochralski technique for PV applications Friedrich, J.; Jung, T.; Trempa, M.; Reimann, C.; Denisov, A.; Muehe, A.	Zeitschriftenaufsatz Journal Article
2019	Thermoelectric properties of silicon and recycled silicon sawing waste He, R.; Heyn, W.; Thiel, F.; Pérez, N.; Damm, C.; Pohl, D.; Rellinghaus, B.; Reimann, C.; Beier, M.; Friedrich, J.; Zhu, H.; Ren, Z.; Nielsch, K.; Schierning, G.	Zeitschriftenaufsatz Journal Article
2019	Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers Kallinger, B.; Erlekampf, J.; Rosshirt, K.; Berwian, P.; Stockmeier, M.; Vogel, M.; Hens, P.; Wischmeyer, F.	Konferenzbeitrag Conference Paper
2019	Verfahren zur Herstellung von polykristallinem Silizium Berwian, Patrick	Patent
2019	Minority carrier lifetime measurements on 4H-SiC epiwafers by time-resolved photoluminescence and microwave detected photoconductivity Beyer, J.; Schüler, N.; Erlekampf, J.; Kallinger, B.; Berwian, P.; Dornich, K.; Heitmann, J.	Konferenzbeitrag Conference Paper
2019	Erlangen - An Important Center of Crystal Growth and Epitaxy. Major Scientific Results and Technological Solutions of the Last Four Decades Friedrich, J.; Müller, G.	Zeitschriftenaufsatz Journal Article
2019	Production of high performance multi-crystalline silicon ingots for PV application by using contamination-free SixNy seed particles Schwanke, S.; Trempa, M.; Reimann, C.; Kuczynski, M.; Schroll, G.; Sans, J.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2019	Laser Writing of Scalable Single Color Centers in Silicon Carbide Chen, Y.-C.; Salter, P.S.; Niethammer, M.; Widmann, M.; Kaiser, F.; Nagy, R.; Morioka, N.; Babin, C.; Erlekampf, J.; Berwian, P.; Booth, M.J.; Wrachtrup, J.	Zeitschriftenaufsatz Journal Article
2019	Deeper insight into lifetime-engineering in 4H-SiC by ion implantation Erlekampf, J.; Kallinger, B.; Weiße, J.; Rommel, M.; Berwian, P.; Friedrich, J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2019	Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by using PL scanning Kocher, Matthias; Schlichting, Holger; Kallinger, Birgit; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias	Poster
2019	Grain boundaries in multicrystalline silicon Trempa, M.; Müller, G.; Friedrich, J.; Reimann, C.	Aufsatz in Buch Book Article
2019	Lifetime engineering in 4H-SiC materials and devices Rommel, Mathias; Erlekampf, Jürgen; Kallinger, Birgit; Weiße, Julietta; Berwian, Patrick; Friedrich, Jochen; Erlbacher, Tobias	Vortrag Presentation

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2018

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2018	Nano- and micro-patterned S-, H- and X-PDMS for cell-based applications: Comparison of wettability, roughness and cell-derived parameters Scharin-Mehlmann, Marina; Häring, Aaron; Rommel, Mathias; Dirnecker, Tobias; Friedrich, Oliver; Frey, Lothar; Gilbert, Daniel F.	Zeitschriftenaufsatz Journal Article
2018	Principle of lifetime-engineering in 4H-SiC by ion implantation Erlekampf, Jürgen; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen; Frey, Lothar; Erlbacher, Tobias	Poster
2018	Influence of triangular defects on the electrical characteristics of 4H-SiC devices Schoeck, J.; Schlichting, H.; Kallinger, B.; Erlbacher, T.; Rommel, M.; Bauer, A.J.	Konferenzbeitrag Conference Paper
2018	Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC Erlekampf, Jürgen; Kaminzky, Daniel; Rosshirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar	Konferenzbeitrag Conference Paper
2018	The GaN trench gate MOSFET with floating islands Shen, L.; Müller, S.; Cheng, X.; Zhang, D.; Zheng, L.; Xu, D.; Yu, Y.; Meissner, E.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2018	Elektronik Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin	Aufsatz in Buch Book Article
2018	Edge facet dynamics during the growth of heavily doped n-type silicon by the Czochralski-method Stockmeier, Ludwig; Kranert, Christian; Raming, Georg; Miller, Alfred; Reimann, Christian; Rudolph, Peter; Friedrich, Jochen	Zeitschriftenaufsatz Journal Article
2018	Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers Kallinger, Birgit; Erlekampf, Jürgen; Roßhirt, Katharina; Berwian, Patrick; Stockmeier, Matthias; Vogel, Michael; Hens, Philip; Wischmeyer, Frank	Vortrag Presentation
2018	Optical stressing of 4H-SiC material and devices Kallinger, B.; Kaminzky, D.; Berwian, P.; Friedrich, J.; Oppel, S.	Konferenzbeitrag Conference Paper
2018	Defects and carrier lifetime in 4H-Silicon Carbide Kallinger, Birgit; Erlekampf, Jürgen; Rommel, Mathias; Berwian, Patrick; Friedrich, J.; Matthus, Christian D.	Vortrag Presentation

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

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2017

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2017	Tiegel zur Herstellung von Silicium-Ingots, Verfahren zu dessen Herstellung sowie Silicium-Ingot Schneider, Veronika; Reimann, Christian; Friedrich, Jochen; Sans, Jürgen; Kuczynski, Maciej	Patent
2017	Evolution of grain structure and recombination active dislocations in extraordinary tall conventional and high performance multi-crystalline silicon ingots Trempa, M.; Kupka, I.; Kranert, C.; Lehmann, T.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2017	Particle engulfment dynamics under oscillating crystal growth conditions Tao, Y.; Sorgenfrei, T.; Jauß, T.; Cröll, A.; Reimann, C.; Friedrich, J.; Derby, J.J.	Zeitschriftenaufsatz Journal Article
2017	A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth Derby, J.J.; Tao, Y.; Reimann, C.; Friedrich, J.; Jauß, T.; Sorgenfrei, T.; Cröll, A.	Zeitschriftenaufsatz Journal Article
2017	Dislocation formation in heavily As-doped Czochralski grown silicon Stockmeier, Ludwig; Lehmann, Lothar; Miller, Alfred; Reimann, Christian; Friedrich, Jochen	Zeitschriftenaufsatz Journal Article
2017	Influence of different nucleation layers on the initial grain structure of multicrystalline silicon ingots Kupka, I.; Lehmann, T.; Trempa, M.; Kranert, C.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2017	Influence of triangular defects on the electrical characteristics of 4H-SiC devices Schöck, Johannes; Schlichting, Holger; Kallinger, Birgit; Erlbacher, Tobias; Rommel, Mathias; Bauer, Anton J.	Poster
2017	Waste heat energy harvesting by use of BaTiO3 for pyroelectric hydrogen generation Belitz, R.; Meisner, P.; Coeler, Matthias; Wunderwald, U.; Friedrich, Jochen; Zosel, J.; Schelter, Matthias; Jachalke, Sven; Mehner, Erik	Zeitschriftenaufsatz Journal Article
2017	Dynamic Modeling of Critical Velocities for the Pushing/Engulfment Transition in the Si-SiC System Under Gravity Conditions Kundin, J.; Aufgebauer, H.; Reimann, C.; Seebeck, J.; Friedrich, J.; Jauss, T.; Sorgenfrei, T.; Croell, A.	Zeitschriftenaufsatz Journal Article
2017	Optical stressing of 4H-SiC material and devices Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen	Poster
2017	A practical example of GaN-LED failure cause analysis by application of combined electron microscopy techniques Meissner, E.; Haeckel, M.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2017	Influence and mutual interaction of process parameters on the Z1/2 defect concentration during epitaxy of 4H-SiC Erlekampf, Jürgen; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen; Frey, Lothar	Poster
2017	Engulfment and pushing of Si3N4 and SiC particles during directional solidification of silicon under microgravity conditions Friedrich, J.; Reimann, C.; Jauss, T.; Cröll, A.; Sorgenfrei, T.; Tao, Y.; Derby, J.J.	Zeitschriftenaufsatz Journal Article

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2016

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2016	Investigations of critical structural defects in active layers of GaN-on-Si for power electronic devices Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.	Konferenzbeitrag Conference Paper
2016	Nitride bonded silicon nitride as a reusable crucible material for directional solidification of silicon Schneider, V.; Reimann, C.; Friedrich, J.; Müller, G.	Zeitschriftenaufsatz Journal Article
2016	Phase-field simulations of particle capture during the directional solidification of silicon Aufgebauer, H.; Kundin, J.; Emmerich, H.; Azizi, M.; Reimann, C.; Friedrich, J.; Jauß, T.; Sorgenfrei, T.; Cröll, A.	Zeitschriftenaufsatz Journal Article
2016	Electrically inactive dopants in heavily doped as-grown czochralski silicon Stockmeier, L.; Elsayed, M.; Krause-Rehberg, R.; Zschorsch, M.; Lehmann, L.; Friedrich, J.	Konferenzbeitrag Conference Paper
2016	Bipolar degradation of 6.5 kV SiC pn-Diodes: Result prediction by photoluminescence Wehrhahn-Kilian, L.; Dohnke, K.O.; Kaminzky, D.; Kallinger, B.; Oppel, S.	Konferenzbeitrag Conference Paper
2016	Wetting and infiltration of nitride bonded silicon nitride by liquid silicon Schneider, V.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2016	Imaging defect luminescence of 4H-SiC by ultraviolet-photoluminescence Berwian, Patrick; Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael	Konferenzbeitrag Conference Paper
2016	Correlation of carbon doping variations with the vertical breakdown of GaN-on-Si for power electronics Knetzger, M.; Meissner, E.; Derluyn, J.; Germain, M.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2016	Synthesis of metastable Co4N, Co3N, Co2N, and CoO0.74N0.24 from a single azide precursor and intermediates in CoBr2 ammonolysis Widenmeyer, M.; Shlyk, L.; Becker, N.; Dronskowski, R.; Meissner, E.; Niewa, R.	Zeitschriftenaufsatz Journal Article
2016	Interaction of SiC particles with moving solid-liquid interface during directional solidification of silicon Friedrich, J.; Reimann, C.; Jauss, T.; Cröll, A.; Sorgenfrei, T.	Zeitschriftenaufsatz Journal Article
2016	Low inductance 2.5kV packaging technology for SiC switches Mouawad, B.; Li, J.; Castellazzi, A.; Johnson, C.M.; Erl-Bacher, T.; Friedrichs, P.	Konferenzbeitrag Conference Paper
2016	Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen	Konferenzbeitrag Conference Paper
2016	Influence of different seed materials on multi-crystalline silicon ingot properties Reimann, C.; Trempa, M.; Lehmann, T.; Rosshirt, K.; Stenzenberger, J.; Friedrich, J.; Hesse, K.; Dornberger, E.	Zeitschriftenaufsatz Journal Article
2016	Clarification of the relation between the grain structure of industrial grown mc-Si and the area fraction of electrical active defects by means of statistical grain structure evaluation Lehmann, T.; Reimann, C.; Meissner, E.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2016	Dislocation formation in seed crystals induced by feedstock indentation during growth of quasimono crystalline silicon ingots Trempa, M.; Beier, M.; Reimann, C.; Roßhirth, K.; Friedrich, J.; Löbel, C.; Sylla, L.; Richter, T.	Zeitschriftenaufsatz Journal Article

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2015

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2015	Defect Luminescence Scanner (DLS): Scientific and industrial-scale defect analysis Oppel, Steffen; Schneider, Adrian; Schütz, Michael; Kaminzky, Daniel; Kallinger, Birgit; Weber, Jonas; Krieger, Michael	Vortrag Presentation
2015	Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs Salinaro, A.; Pobegen, G.; Aichinger, T.; Zippelius, B.; Peters, D.; Friedrichs, P.; Frey, L.	Zeitschriftenaufsatz Journal Article
2015	Species transport by natural convection of supercritical ammonia Seebeck, J.; Savva, P.; Erlekampf, J.; Meissner, E.; Friedrich, J.; Frey, L.	Konferenzbeitrag Conference Paper
2015	Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick	Konferenzbeitrag Conference Paper
2015	Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen	Poster
2015	Quality control of SiC materials by optical detection of defects Kallinger, Birgit; Kaminzky, Daniel; Roßhirt, Katharina; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen	Vortrag Presentation
2015	Characterization and application of nano- and microstructured silicon-polymer-based surfaces for manipulation of cells Scharin, Marina; Haering, Aaron; Gilbert, D.; Dirnecker, Tobias; Stumpf, Florian; Rommel, Mathias; Friedrich, Oliver; Frey, Lothar	Poster
2015	Czochralski growth of silicon crystals Friedrich, J.; Ammon, W. von; Müller, G.	Aufsatz in Buch Book Article
2015	Improvement of 4H-SiC material quality Kallinger, Birgit; Kaminzky, Daniel; Rommel, Mathias; Berwian, Patrick; Friedrich, Jochen	Vortrag Presentation
2015	Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips Fuegl, M.; Mackh, G.; Meissner, E.; Frey, L.	Konferenzbeitrag Conference Paper
2015	Optical in-situ monitoring system for simultaneous measurement of thickness and curvature of thick layer stacks during hydride vapor phase epitaxy growth of GaN Semmelroth, K.; Berwian, P.; Schroter, C.; Leibiger, G.; Schonleber, M.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2015	Structural and optical properties of AlN grown by solid source solution growth method Kangawa, Y.; Suetsugu, H.; Knetzger, M.; Meissner, E.; Hazu, K.; Chichibu, S.F.; Kajiwara, T.; Tanaka, S.; Iwasaki, Y.; Kakimoto, K.	Zeitschriftenaufsatz Journal Article
2015	Influence of growth temperature on the defect density for 4H-SiC homoepitaxy Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen	Poster
2015	Guest Editors' Preface Klimm, D.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2015	Response of as grown dislocation structure to temperature and stress treatment in multi-crystalline silicon Reimann, C.; Friedrich, J.; Meissner, E.; Oriwol, D.; Sylla, L.	Zeitschriftenaufsatz Journal Article
2015	Bioactivation and functionalization of PDMS surfaces to control cellular adhesion behaviour by micro- or nanopatterning and plasma treatment Scharin, Marina; Rommel, Mathias; Dirnecker, Tobias; Stumpf, Florian; Zipfel, J.; Marhenke, J.; Friedrich, O.; Gilbert, D.F.; Herrmann, M.; Frey, Lothar	Poster
2015	Characterization and application of nano- and microstructured PDMS surfaces for manipulation of cells Scharin, Marina; Gilbert, D.; Rommel, Mathias; Dirnecker, Tobias; Stumpf, Florian; Haering, A.; Friedrich, O.; Frey, Lothar	Vortrag Presentation
2015	Imaging defect luminescence of 4H-SiC by UV-photoluminescence Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael	Vortrag Presentation
2015	Controlling cellular adhesion through micro- or nanopatterning of silicone-based surfaces to improve biomedical devices for in vitro based applications Scharin, Marina; Rommel, Mathias; Dirnecker, Tobias; Stumpf, Florian; Zipfel, J.; Marhenke, J.; Friedrich, O.; Glibert, D.F.; Herrmann, M.; Frey, Lothar	Poster
2015	Influence of grain boundaries intentionally induced between seed plates on the defect generation in quasi-mono-crystalline silicon ingots Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T.	Zeitschriftenaufsatz Journal Article
2015	Functionalization of PDMS surfaces through micro- or nano-patterning to control the cellular adhesion Scharin, Marina; Häring, Aron; Dirnecker, Tobias; Rommel, Mathias; Marhenke, Julius; Friedrich, O.; Gilbert, D.F.; Herrmann, Martin; Frey, Lothar	Vortrag Presentation
2015	Investigation of iron contamination of seed crystals and its impact on lifetime distribution in Quasimono silicon ingots Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Sylla, L.; Krause, A.; Richter, T.	Zeitschriftenaufsatz Journal Article
2015	Imaging defect luminescence measurements of 4H-SiC by UV-PL Kaminzky, Daniel; Roßhirt, Katharina; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schneider, Adrian; Schütz, Michael	Vortrag Presentation

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2014

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2014	Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC Hürner, A.; Bonse, C.; Clemmer, G.; Kallinger, B.; Heckel, T.; Erlbacher, T.; Mitlehner, H.; Häublein, V.; Bauer, A.J.; Frey, L.	Konferenzbeitrag Conference Paper
2014	HCl assisted growth of thick 4H-SiC epilayers for bipolar devices Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen	Konferenzbeitrag Conference Paper
2014	Comparison of carrier lifetime measurements and mapping in 4H SiC using time resolved photoluminescence and m-PCD Kallinger, Birgit; Rommel, Mathias; Lilja, Louise; Hassan, Jawad ul; Booker, Ian; Janzen, Erik; Bergman, Peder	Konferenzbeitrag Conference Paper
2014	Verfahren zur Behandlung und/oder Recycling von Säge-Slurries Azizi, Maral; Reimann, Christian; Friedrich, Jochen; Blankenburg, Hans-Joachim; Colditz, Rainer	Patent
2014	Analytical stress characterization after different chip separation methods Fuegl, M.; Mackh, G.; Meissner, E.; Frey, L.	Zeitschriftenaufsatz Journal Article
2014	Verfahren und Vorrichtung zur Bestimmung der Schmelzhöhe und zur Regulation der Erstarrung und Schmelzung in einem Tiegel Friedrich, Jochen; Reimann, Christian; Wunderwald, Ulrike	Patent
2014	Defektlumineszenz in 4H-SiC Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Oppel, Steffen; Schütz, Michael	Vortrag Presentation
2014	Verfahren zur Herstellung einer diffusionshemmenden Beschichtung, Tiegel zum Schmelzen und/oder Kristallisieren von Nicht-Eisen Metallen sowie Verwendungszwecke Reimann, Christian; Obermeier, Sebastian; Trempa, Matthias; Schneider, Veronika; Friedrich, Jochen	Patent
2014	New Defect Luminescence Scanner for Inline Control of Material Quality Kallinger, Birgit; Kaminzky, Daniel; Berwian, Patrick; Oppel, Steffen; Schütz, Michael; Schneider, Adrian; Krieger, Michael; Weber, Jonas; Friedrich, Jochen	Poster
2014	Formation and decomposition of iron nitrides observed by in situ powder neutron diffraction and thermal analysis Widenmeyer, M.; Hansen, T.C.; Meissner, E.; Niewa, R.	Zeitschriftenaufsatz Journal Article
2014	Large- and small-angle grain boundaries in multi-crystalline silicon and implications for the evolution of grain boundaries during crystal growth Carl, E.R.; Danilewsky, A.; Meissner, E.; Geiger, T.	Zeitschriftenaufsatz Journal Article
2014	Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation Friedrich, J.; Kallinger, B.; Ehlers, C.; Berwian, P.	Vortrag Presentation
2014	Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale Lehmann, T.; Trempa, M.; Meissner, E.; Zschorsch, M.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2014	Preferred grain orientations in silicon ribbons grown by the string ribbon and the edge-defined film-fed growth methods Stockmeier, L.; Müller, G.; Seidl, A.; Lehmann, T.; Reimann, C.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2014	On the formation mechanism of chromium nitrides: An in situ study Widenmeyer, M.; Meissner, E.; Senyshyn, A.; Niewa, R.	Zeitschriftenaufsatz Journal Article
2014	Defect formation induced by seed-joints during directional solidification of quasi-mono-crystalline silicon ingots Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Krause, A.; Sylla, L.; Richter, T.	Zeitschriftenaufsatz Journal Article
2014	Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN Sintonen, S.; Rudzinski, M.; Suihkonen, S.; Jussila, H.; Knetzger, M.; Meissner, E.; Danilewsky, A.; Tuomi, T.O.; Lipsanen, H.	Zeitschriftenaufsatz Journal Article
2014	Silicon carbide in power electronics: Overcoming the obstacle of bipolar degradation Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Friedrich, Jochen; Rommel, Mathias	Vortrag Presentation
2014	Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes Erlekampf, J.; Seebeck, J.; Savva, P.; Meissner, E.; Friedrich, J.; Alt, N.S.A.; Schlücker, E.; Frey, L.	Konferenzbeitrag Conference Paper
2014	Preface. 8th International Workshop on Bulk Nitrides Semiconductors, IWBNS 2013 Freitas, J.A.; Meissner, E.; Paskova, T.; Miyake, H.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

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2013

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2013	Comparison of carrier lifetime measurements and mapping using time resolved photoluminescence and µ-PCD Kallinger, Birgit; Rommel, Mathias; Lilja, L.; Hassan, J.; Booker, Ian; Janzen, Erik; Bergman, J.P.	Poster
2013	Step-controlled homoepitaxial growth of 4H-SiC on vicinal substrates Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Thomas, Bernd	Zeitschriftenaufsatz Journal Article
2013	Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon Karzel, P.; Ackermann, M.; Gröner, L.; Reimann, C.; Zschorsch, M.; Meyer, S.; Kiessling, F.; Riepe, S.; Hahn, G.	Zeitschriftenaufsatz Journal Article
2013	Non-isothermal model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field Dadzis, K.; Niemietz, K.; Pätzold, O.; Wunderwald, U.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2013	Numerical parameter studies of 3D melt flow and interface shape for directional solidification of silicon in a traveling magnetic field Vizman, D.; Dadzis, K.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2013	Comparative study of the luminescence of Al2O3:C and Al2O3 crystals under synchrotron radiation excitation Zorenko, Y.; Fabisiak, K.; Zorenko, T.; Mandowski, A.; Xia, Q.; Batentschuk, M.; Friedrich, J.; Zhusupkalieva, G.	Zeitschriftenaufsatz Journal Article
2013	Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter	Konferenzbeitrag Conference Paper
2013	HCl assisted growth of thick 4H-SiC epilayers for bipolar devices Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen	Poster
2013	Hydrogen passivation and phosphorous gettering at different grain boundary types in multicrystalline silicon Karzel, P.; Ackermann, M.; Gröner, L.; Reimann, C.; Zschorsch, M.; Meyer, S.; Hahn, G.	Konferenzbeitrag Conference Paper
2013	Fehlpassung bei der Homo- und Heteroepitaxie Kallinger, Birgit	Vortrag Presentation
2013	Constitutional supercooling in Czochralski growth of heavily doped silicon crystals Friedrich, J.; Stockmeier, L.; Müller, G.	Zeitschriftenaufsatz Journal Article
2013	Unsteady coupled 3D calculations of melt flow, interface shape, and species transport for directional solidification of silicon in a traveling magnetic field Dadzis, K.; Vizman, D.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2013	Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.	Zeitschriftenaufsatz Journal Article
2013	Combined global 2D-local 3D modeling of the industrial Czochralski silicon crystal growth process Jung, T.; Seebeck, J.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2013	SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd	Konferenzbeitrag Conference Paper

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2012

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2012	Considerations on the effect of interstitial and precipitated Fe in intentionally Fe-doped mc-silicon Azizi, M.; Meissner, E.; Friedrich, J.	Konferenzbeitrag Conference Paper
2012	Systematic characterization of multi-crystalline silicon String Ribbon wafer Reimann, C.; Müller, G.; Friedrich, J.; Lauer, K.; Simonis, A.; Wätzig, H.; Krehan, S.; Hartmann, R.; Kruse, A.	Zeitschriftenaufsatz Journal Article
2012	Analysis of threading dislocations in 4H-SiC by defect selective etching and X-ray topography Kallinger, Birgit; Berwian, P.; Friedrich, J.; Danilewsky, A.; Wehrhahn, A.; Weber, A.-D.	Vortrag Presentation
2012	SXRT investigations on electrically stressed 4H-SiC PiN diodes for 6.5 kV Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Hecht, Christian; Peters, Dethard; Friedrichs, Peter; Thomas, Bernd	Poster
2012	Development of a novel in situ monitoring technology for ammonothermal reactors Alt, N.S.A.; Meissner, E.; Schluecker, E.	Zeitschriftenaufsatz Journal Article
2012	Mono-crystalline growth in directional solidification of silicon with different orientation and splitting of seed crystals Trempa, M.; Reimann, C.; Friedrich, J.; Müller, G.; Oriwol, D.	Zeitschriftenaufsatz Journal Article
2012	Kristalle - Wunderwerkstoffe für die Industrie Friedrich, J.; Müller, G.	Aufsatz in Buch Book Article
2012	Influence of epilayer thickness and structural defects on the minority carrier lifetime in 4H-SiC Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Azizi, Maral; Rommel, Mathias; Hecht, Christian; Friedrichs, Peter	Poster
2012	Cathodoluminescence imaging for the determination of dislocation density in differently doped HVPE GaN Meissner, E.; Schweigard, S.; Friedrich, J.; Paskova, T.; Udwary, K.; Leibiger, G.; Habel, F.	Zeitschriftenaufsatz Journal Article
2012	Aufreinigung eines Tiegels für eine Halbleiterverarbeitung Schneider, Veronika; Reimann, Christian; Friedrich, J.	Patent
2012	Wiederverwendbarer Tiegel aus einer Siliziumnitrid-Keramik sowie dessen Verwendung bei der Herstellung eines mono- oder multikristallinen Halbmetallkörpers aus einer Schmelze Mono, T.; Schneider, Veronika; Martin, R.; Reimann, Christian; Friedrich, J.	Patent
2012	Doping induced lattice misfit in 4H-SiC homoepitaxy Kallinger, Birgit; Berwian, Patrick; Friedrich, Jochen; Müller, Georg; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann; Thomas, Bernd	Zeitschriftenaufsatz Journal Article
2012	Ohmic and rectifying contacts on bulk AlN for radiation detector applications Erlbacher, Tobias; Bickermann, Matthias; Kallinger, Birgit; Meissner, Elke; Bauer, Anton J.; Frey, Lothar	Zeitschriftenaufsatz Journal Article
2012	Analysis of the growth conditions of long single crystalline basal-plane-faceted sapphire ribbons by the Stepanov/EFG technique Denisov, A.V.; Molchanov, A.; Punin, Y.O.; Krymov, V.M.; Müller, G.; Friedrich, J.	Zeitschriftenaufsatz Journal Article
2012	In situ monitoring technologies for ammonthermal reactors Alt, N.; Meissner, E.; Schlücker, E.; Frey, L.	Zeitschriftenaufsatz Journal Article
2012	Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy Rumler, Maximilian; Rommel, Mathias; Erlekampf, Jürgen; Azizi, Maral; Geiger, Tobias; Bauer, Anton J.; Meißner, Elke; Frey, Lothar	Zeitschriftenaufsatz Journal Article

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2011

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2011	Numerical study of the influence of different types of magnetic fields on the interface shape in directional solidification of multi-crystalline silicon ingots Tanasie, C.; Vizman, D.; Friedrich, J.	Konferenzbeitrag Conference Paper
2011	Liquid phase epitaxy (LPE) of GaN on c- and r-faces of AlN substrates Azizi, M.; Meissner, E.; Friedrich, J.; Müller, G.	Zeitschriftenaufsatz Journal Article
2011	Device useful for producing silicon blocks, comprises a container for receiving a silicon melt with a base, an inner side, an outer side and a central longitudinal axis Radel, G.; Nauert, D.; Trempa, M.; Dadzis, K.; Dietrich, M.; Proske, S.; Reimann, C.; Friedrich, J.; Freudenberg, B.	Patent
2011	Phonons in SiAs: Raman scattering study and DFT calculations Kutzner, J.; Kortus, J.; Pätzold, O.; Wunderwald, U.; Irmer, G.	Zeitschriftenaufsatz Journal Article
2011	4H-SiC homoepitaxial growth on substrates with different off-cut directions Kallinger, B.; Thomas, B.; Berwian, P.; Friedrich, J.; Trachta, G.; Weber, A.-D.	Konferenzbeitrag Conference Paper
2011	Device for producing silicon blocks, comprises vessel, which is provided to receive silicon melt and has bottom, inner side, outer side and middle-longitudinal axis, supporting plate, and unit for generating inhomogeneous temperature field Freudenberg, B.; Radel, G.; Trempa, M.; Dadzis, K.; Dietrich, M.; Nauert, D.; Proske, S.; Reimann, C.; Friedrich, J.	Patent
2011	Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography Kallinger, B.; Polster, S.; Berwian, P.; Friedrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, A.-D.	Zeitschriftenaufsatz Journal Article
2011	Versetzungsverhalten bei der Homoepitaxie von hexagonalem Siliziumkarbid (4H-SiC) Kallinger, Birgit	Dissertation Doctoral Thesis
2011	DEVICE AND METHOD FOR THE PRODUCTION OF SILICON BLOCKS Freudenberg, Bernhard; Hollatz, Mark; Trempa, Matthias; Reimann, Christian; Friedrich, Jochen	Patent
2011	Reliability of nitrided gate oxides for N- and P-type 4H-SiC(0001) metal-oxide-semiconductor devices Noborio, M.; Grieb, M.; Bauer, A.J.; Peters, D.; Friedrichs, P.; Suda, J.; Kimoto, T.	Zeitschriftenaufsatz Journal Article
2011	Homoepitaxial growth and defect characterization of 4H-SiC epilayers Kallinger, Birgit; Thomas, Bernd; Berwian, Patrick; Friedrich, Jochen; Weber, Arnd-Dietrich; Volz, Eduard; Trachta, Gerd; Spiecker, Erdmann	Vortrag Presentation
2011	Model experiments and numerical simulations for directional solidification of multicrystalline silicon in a traveling magnetic field Dadzis, K.; Ehrig, J.; Niemietz, K.; Pätzold, O.; Wunderwald, U.; Friedrich, J.	Zeitschriftenaufsatz Journal Article

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