Other Crystal Materials

We are well experienced in the growth and characterization of a variety of other semiconductor materials (Ge, GaAs, InP, CdTe) as well as of optical, laser and scintillator crystals (sapphire, oxides (LSO, YVO₄, Y₂O₃) or halides (CaF₂, CeBr₃)) by different melt and solution growth techniques.

We support our customers in the development of new crystal growth and epitaxy equipment and processes based on our broad material expertise and by using numerical simulation.

Furthermore, we offer specific characterization services of crystal and wafer material.

Services

• Support of the development of crystal growth and epitaxy equipment by using thermal modeling and our expertise in the engineering of in-situ measuring techniques
• Specific crystal growth experiments in special R&D furnaces in house and at partners’ sites
• Development of sample preparation for the analysis of the properties of the materials
• Characterization of structural, optical, physical, chemical, and electrical properties
• Simulation of heat and mass transport phenomena including the effects of magnetic fields