We are well experienced in the growth and characterization of a variety of other semiconductor materials (Ge, GaAs, InP, CdTe) as well as of optical, laser and scintillator crystals (sapphire, oxides (LSO, YVO4, Y2O3) or halides (CaF2, CeBr3)) by different melt and solution growth techniques.
We support our customers in the development of new crystal growth and epitaxy equipment and processes based on our broad material expertise and by using numerical simulation.
Furthermore, we offer specific characterization services of crystal and wafer material.
Support of the development of crystal growth and epitaxy equipment by using thermal modeling and our expertise in the engineering of in-situ measuring techniques
Specific crystal growth experiments in special R&D furnaces in house and at partners’ sites
Development of sample preparation for the analysis of the properties of the materials
Characterization of structural, optical, physical, chemical, and electrical properties
Simulation of heat and mass transport phenomena including the effects of magnetic fields
Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.