Other Crystal Materials

We are well experienced in the growth and characterization of a variety of other semiconductor materials (Ge, GaAs, InP, CdTe) as well as of optical, laser and scintillator crystals (sapphire, LSO, YVO4, Y2O3, CaF2, CeBr3) by different melt and solution growth techniques such as Bridgman, VGF or THM. We support our customers in the development of crystal growth and epitaxy equipment and processes based on our broad material expertise and by numerical simulation. Furthermore, we offer specific characterization services of crystal and wafer material.

© Fraunhofer IISB
Solid-liquid interface shape in VGF GaAs
© Kurt Fuchs / Fraunhofer IISB
VGF crystal growth furnace
© Fraunhofer IISB
Etch pits on VGF InP sample



  • Support of the development of crystal growth and epitaxy equipment by using thermal modeling and our expertise in the engineering of in-situ measuring techniques
  • Specific crystal growth experiments in special R&D furnaces in house and at partners’ sites
  • Sample preparation for the analysis of the properties of the materials
  • Characterization of structural, optical, physical, chemical, and electrical properties
  • Simulation of heat and mass transport phenomena including the effects of magnetic fields
© Fraunhofer IISB
Material test equipment for production of scintillator crystals
© Fraunhofer THM
Polishing and defect selective etching for analysis of the structural properties of compound semiconductor samples
© Fraunhofer IISB
Analysis of crystals and wafers by confocal laser microscopy

Focus Areas

Explore the areas of semiconductor crystal growth, epitaxy, and device processing including characterization and modeling.