ICNS-15

The ICNS-15 presents high-impact scientific and technological advances in materials and devices based on group-III nitride semiconductors, and features plenary sessions, parallel topical sessions, poster sessions, and an industrial exhibition.

The colleagues from Fraunhofer IISB and THM are looking forward to seeing you in Malmö!

The following presentations report on research results from Fraunhofer IISB and THM:

Monday, July 7

04:45 - 05:00 PM, Talk, Room High 3
Improving the quality of PVT-grown AlN-crystals by utilizing a seed recovery process
S. Besendörfer et al.

05:00 - 07:00 PM, Poster Session

Optical and structural characterisation of colour centres in (PVT and PVD synthesized) AlN for quantum applications.
A. Albrecht et al.

Defect analysis comparing polarized stress imaging and X-ray topography methods on gallium nitride epitaxial layers on silicon and sapphire
L. Schiller et al.

Investigation of dislocation types and line vectors of threading dislocations in aluminum nitride using monochromatic and white-beam X-ray topography
L. Schiller et al.

Influence of the atomic layer etching sequence on the electrical behavior of gate recessed AlGaN/GaN High Electron Mobility Transistors
S. Seidel et al.

Determination of the bulk refractive index of AlN by spectroscopic ellipsometry
R. Weingärtner et al.

Numerical and experimental analysis of ammonothermal crystal growth configurations and their impact on the temperature field along the autoclave wall
T. Wostatek et al.

Tuesday, July 8

09:00 - 09:15 AM, Talk, Room Live 2 & 3
Epitaxy of > 7 µm thick GaN drift layers on Si (111) for fully vertical power devices
S. Michler et al.

05:00 - 07:00 PM, Poster Session

AlScN/GaN (MIS)HEMTs grown by metal-organic chemical vapor deposition
F.C. Beyer et al.

Investigation of wide-bandgap semiconductor materials by optical defect spectroscopy and THz-TDS
C. Röder et al.

Correlation study of AlGaN/GaN HEMT structures performed with novel wafer level capacitance mapping technique and spectroscopic ellipsometry
M. Wilson et al.

Thursday, July 10

03:00 - 04:00 PM, Poster Session
Qualification of AlN substrates after different surface treatments
J. Schwar et al.

Friday, July 11

09:45 - 10:00 AM, Talk, Room Live 2 & 3
Self-organised ordering of scandium into monolayers of aluminum nitride and its implication for materials growth and AlScN based semiconductor devices
U. Bläß et al.

09:45 - 10:00 AM, Talk, Room High 1
Impact of dislocations on leakage currents of GaN-on-GaN pn-diodes: A statistical approach comparing X-ray topography with electrical characteristics
R. Weingärtner et al.