GADEST 2026

The GADEST (Gettering and Defect Engineering in Semiconductor Technology) conference is devoted to semiconductor defect physics, materials science, and device technology and focuses on both fundamental as well as technological aspects of defects, growth, processing, and modelling of electronic materials and devices, ranging from microelectronics to photovoltaics.

Since 1985, the GADEST conference series provides a forum for experts in the field of semiconductor technology, semiconductor device physics, and defect physics. Focusing on applied research, an important goal of the GADEST is to bring together academics and industry. The spirit of the GADEST is to establish an atmosphere which allows for close discussions and interactions among participants.
 

The following presentations report on research results of Fraunhofer IISB:

Optical Characterisation of Colour Centres in Nitride Layers
by A. Albrecht et al.
29/09/2026, 19:00 h (poster session)

Origin and Evolution of Basal Dislocations in HVPE Grown GaN
by U. Bläß et al.
29/09/2026, 19:00 h (poster session)

Photoluminescence Spectroscopy Study on Hydride Vapour Phase Epitaxy Grown GaN:Mn using Metal-organic Precursor Doping Approach
by K.-S. Hsu et al.
29/09/2026, 19:00 h (poster session)

Non-destructive Visualization of the Threading Dislocation Content in PVT-grown Bulk AlN on Wafer Scale
by L. Schiller et al.
30/09/2026, 09:30 h (oral presentation)

Plasma Enhanced Atomic Layer Etching on Nitrides and SiC for High Power and Photonic Application
by F.C. Beyer et al.
30/09/2026, 09:50 h (invited presentation)
 

We are looking forward to seeing you in Venice!