New epitaxy system for 200 mm SiC wafers
As the only research institution worldwide, Fraunhofer IISB now operates a 200 mm capable AIXTRON SiC epitaxial Planetary Reactor.
This state-of-the-art epitaxy technology is mainly used for the processing of silicon carbide device prototypes.
IISB operates a seamless and industry-compatible 200-mm CMOS line, which is being qualified step by step for silicon carbide within the framework of the Research Fab Microelectronics Germany (FMD).
With this technological equipment, Fraunhofer IISB can offer its research partners, industry, and explicitly SMEs, a unique industry-open research and development platform in the field of SiC power electronics and quantum technologies.
Further information on SiC: