Workshop "Optimization of mechanical layer properties; new developments in deposition and etching"

November 14, 2006

Fraunhofer IISB, Erlangen

Optimization of mechanical layer properties; new developments in deposition and etching

New developments in etching

Improved wafer yield by bevel engineering
M. Schmidt, Qimonda Dresden GmbH & Co. OHG, Germany

Endpoint detection for low open area contact etch
M. Schardin, Qimonda Dresden GmbH & Co. OHG, Germany

New developments in deposition

Electroplated metallization in automotive semiconductors
W. Robl, Infineon AG, Regensburg, Germany

Precursor selection and chemical delivery challenges in advanced materials processing
H. Treichel, F. Schoene, Aviza Technology GmbH, Dresden, Germany

Characterization of ruthenium layers for MIM capacitor applications prepared by atomic vapor deposition
P. Baumann, C. Manke, AIXTRON AG, Aachen, Germany

Optimization of mechanical layer properties

Measurement and influence of local mechanic stress in silicon wafers
B. Dietrich, IHP-Innovations for high performance microelctronics, Frankfurt (Oder), Germany

Raman spectroscopy for microelectronic applications
R. Geiger, HORIBA Jobin Yvon GmbH, Bensheim, Germany

Transistor performance enhancement by the use of stress engineering
C. Kurthen, Applied Materials GmbH, Dresden, Germany

Influences on stress in metal layers
C. Bromberger, A. Priebe, Atmel Germany GmbH, Heilbronn, Germany