43. Treffen der Nutzergruppe Heißprozesse und RTP

11. April 2018

Fraunhofer IISB, Erlangen


Anton Bauer, Fraunhofer IISB, Erlangen
Wilfried Lerch

Semiconductor Doping by Atomic Layer Deposition of Thin Film Dopant Sources Followed by Rapid Thermal Annealing
Bodo Kalkofen, Otto-von-Guericke-Universität Magdeburg

Large Scale Graphene Integration for Silicon Technologies
Alexander Scheit, IHP, Frankfurt (Oder)

Reduction of Backside Defects in RTP Tools
Silke Hamm, Mattson Thermal Products, Dornstadt

O2 Partial Pressure Reduction at High Oxidation Temperature for Advanced 4H-SiC Gate Oxides
Anton Bauer, Fraunhofer IISB, Erlangen

Processing of Ohmic Contacts for SiC Power Devices
Tomasz Sledziewski, Fraunhofer IISB, Erlangen

High-K Metal Gate Stacks with Ultra-Thin Interfacial Layers Formed by Low Temperature Microwave-Based Plasma Oxidation
Malte Czernohorsky, Fraunhofer IPMS, Dresden

Nächstes Treffen:

3. April 2019

am Fraunhofer IISB, Erlangen