We are contributing to the development of next-generation high temperature equipment and processes for crystal growth (Si, SiC, GaN, III-V, II-VI, Halides, Oxides), as well as for thermal treatment of semiconductor wafers by using our expertise in modeling heat and mass transport phenomena. Besides thermal simulations we have profound knowledge to optimize CFD problems. For that purpose we are equipped with tailored software tools such as CrysMAS, OpenFOAM, getdp, and Ansys Products, which run on our high-performance computing cluster. In the field of software development we concentrate on OpenFoam for a more efficient and more robust solution of complex three-dimensional heat and mass transfer problems.
Semiconductor equipment simulation helps in developing and optimizing processes and equipment. The usage of equipment simulation tools allows us to study various processes, including physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced CVD (PECVD), sputter etching, and reactive ion etching (RIE). Furthermore, we couple our inhouse feature-scale simulation tools for etching and deposition to equipment simulation output. This provides the capability to study the impact of equipment settings on structure profiles for etching and deposition.