Technology Computer-Aided Design (TCAD)

TCAD - Modeling of Processes and Devices

We investigate diffusion and implantation processes, as encountered in semiconductor technology, both theoretically and experimentally.  We develop models and determine the parameters required for process simulation. Our research activities include the investigation of diffusion in multilayer structures, of the electrical activation of dopant atoms, measurements of vacancy concentrations in silicon wafers, for instance using platinum diffusion and DLTS, and theoretical work on diffusion mechanisms.

Another topic covered by our group is the simulation of topography processes, for which we use commercial software, open-source tools, and in-house software modules. This includes:

  • Modeling of dry etching processes as well as of plasma-based, chemical, and physical deposition processes
  • Coupling of feature-scale and equipment-scale simulation for thermal and plasma reactors

In order to investigate how modifications of the technology processes affect device behavior, we study the electrical characteristics of various kinds of devices by means of simulation. To this end, the process simulation modules are tighlty coupled to the device simulation tools.

 

MUNDFAB

H2020 Project MUNDFAB:

Modeling Unconventional Nanoscaled Device FABrication

 

Simulation of Ball Bonding Processes

In the example shown, a ball bonding process is simulated over a high-voltage isolation structure.

 

Publications of the TCAD Group

 

Equipment Simulation

Simulation of thermal and plasma processes for semiconductor technology and other fields of applications.

 

Etching Simulator ANETCH

3D feature-scale simulation of dry etching processes

 

Deposition Simulator DEP3D

3D feature-scale simulation of PVD, CVD, IMP, and electroplating processes