Doping and Device Simulation

We investigate diffusion processes, as encountered in semiconductor technology, both theoretically and experimentally. Our aim is to improve process characterization and optimization by simulation. We develop models and determine the parameters required for process simulation. Our research activities include the investigation of diffusion in multilayer structures, of the electrical activation of dopant atoms, measurements of vacancy concentrations in silicon wafers using platinum diffusion and DLTS, and theoretical work on diffusion mechanisms.

We work on the development and application of simulation programs that predict dopant concentrations resulting from implantation steps. Furthermore, we simulate electrical properties of devices: We can calculate how modifications in the technology procedure affect device behavior and how to optimize processes. As we can rely on our comprehensive experience with the application of such simulators, we are able to tackle your problems and questions effectively.