Technology Computer-Aided Design (TCAD)

Modeling of Diffusion and Implantation Processes

We investigate diffusion and implantation processes, as encountered in semiconductor technology, both theoretically and experimentally.  We develop models and determine the parameters required for process simulation. Our research activities include the investigation of diffusion in multilayer structures, of the electrical activation of dopant atoms, measurements of vacancy concentrations in silicon wafers, for instance using platinum diffusion and DLTS, and theoretical work on diffusion mechanisms.

Simulation of Topography Processes

For the simulation of topography processes we use commercial software, open-source tools, and in-house software modules. This includes:

  • Modeling of dry etching processes as well as of plasma-based, chemical, and physical deposition processes
  • Coupling of feature-scale and equipment-scale simulation for thermal and plasma reactors

Etching Simulator ANETCH

3D feature-scale simulation of dry etching processes


Deposition Simulator DEP3D

3D feature-scale simulation of PVD, CVD, IMP, and electroplating processes


Equipment Simulation

Simulation of thermal and plasma processes for semiconductor technology and other fields of applications

Simulation of Devices

In order to investigate how modifications of the technology processes affect device behavior, we study the electrical characteristics of various kinds of devices by means of simulation. To this end, the process simulation modules are tighlty coupled to the device simulation tools.

Coupling of device simulation results with compact models allows us to treat not only single devices but also entire circuits.


Publications of the TCAD group in journals and conference proceedings