Technology Computer-Aided Design (TCAD)

Modeling of Diffusion and Implantation Processes

We investigate diffusion and implantation processes, as encountered in semiconductor technology, both theoretically and experimentally.  We develop models and determine the parameters required for process simulation. Our research activities include the investigation of diffusion in multilayer structures, of the electrical activation of dopant atoms, measurements of vacancy concentrations in silicon wafers, for instance using platinum diffusion and DLTS, and theoretical work on diffusion mechanisms.

Simulation of Topography Processes

For the simulation of topography processes we use commercial software, open-source tools, and in-house software modules. This includes:

  • Modeling of dry etching processes as well as of plasma-based, chemical, and physical deposition processes
  • Coupling of feature-scale and equipment-scale simulation for thermal and plasma reactors

Etching Simulator ANETCH


3D feature-scale simulation of dry etching processes

Deposition Simulator DEP3D


3D feature-scale simulation of PVD, CVD, IMP, and electroplating processes

Equipment Simulation


Simulation of thermal and plasma processes for semiconductor technology and other fields of applications

Simulation of Devices

In order to investigate how modifications of the technology processes affect device behavior, we study the electrical characteristics of various kinds of devices by means of simulation. To this end, the process simulation modules are tighlty coupled to the device simulation tools.

In addition to studying the behavior of the devices on the chip, we apply simulation tools that allow us to investigate chip packaging, e.g. by means of thermomechanical simulation.


H2020 Project MUNDFAB:

Modeling Unconventional Nanoscaled Device FABrication

Simulation of Ball Bonding Processes


In the example shown, a ball bonding process is simulated over a high-voltage isolation structure.


Publications of the TCAD group in journals and conference proceedings