Publications TCAD

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2021 Intrinsic nano-diffusion-couple for studying high temperature diffusion in multi-component superalloys
Eggeler, Yolita; Kubacka, Dorota; Pichler, Peter; Wu, Mingjian; Spiecker, Erdmann
Zeitschriftenaufsatz
Journal Article
2021 Molecular Dynamics Simulations Supporting the Development of a Continuum Model of Heat Transport in Nanowires
Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Sciuto, Alberto; La Magna, Antonino
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2020 An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETs
Albrecht, M.; Klüpfel, F.J.; Erlbacher, T.
Zeitschriftenaufsatz
Journal Article
2020 Study of the manufacture uncertainty impact of the hybrid SET-FET circuit
Amat, E.; Moral, A. del; Klüpfel, F.; Bausells, J.; Perez-Murano, F.
Konferenzbeitrag
Conference Paper
2020 Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections
Sciuto, Alberto; Deretzis, Ioannis; Fisicaro, Giuseppe; Lombardo, Salvatore F.; Magna, Antonino la; Grimaldi, Maria Grazia; Huet, Karim; Lespinasse, Bobby; Verstraete, Armand; Curvers, Benoit; Bejenari, Igor; Burenkov, Alexander; Pichler, Peter
Konferenzbeitrag
Conference Paper
2020 Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires
Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Magna, Antonino la
Konferenzbeitrag
Conference Paper
2019 Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance
Klüpfel, Fabian J.
Zeitschriftenaufsatz
Journal Article
2019 Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Zeitschriftenaufsatz
Journal Article
2019 On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias
Zeitschriftenaufsatz
Journal Article
2019 A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors
Klüpfel, Fabian J.
Zeitschriftenaufsatz
Journal Article
2019 Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon
Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René
Zeitschriftenaufsatz
Journal Article
2019 Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Konferenzbeitrag
Conference Paper
2019 Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc
Zeitschriftenaufsatz
Journal Article
2018 Elektronik
Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin
Aufsatz in Buch
Book Article
2018 Optimized 2D positioning of windings in inductive components by genetic algorithm
Rosskopf, Andreas; Knoerzer, Karsten; Baer, Eberhard; Ehrlich, Stefan
Konferenzbeitrag
Conference Paper
2018 Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter
Konferenzbeitrag
Conference Paper
2018 Process variability for devices at and beyond the 7 nm node
Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail
Zeitschriftenaufsatz
Journal Article
2018 Modeling of block copolymer dry etching for directed self-assembly lithography
Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas
Konferenzbeitrag
Conference Paper
2018 The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning
Baer, Eberhard; Lorenz, Juergen
Konferenzbeitrag
Conference Paper
2018 Quantum dot location relevance into SET-FET circuits based on FinFET devices
Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian
Konferenzbeitrag
Conference Paper
2018 Autonomous circuit design of a resonant converter (LLC) for on-board chargers using genetic algorithms
Rosskopf, A.; Volmering, S.; Ditze, S.; Joffe, C.; Bär, E.
Konferenzbeitrag
Conference Paper
2018 Process variability for devices at and beyond the 7 nm node
Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail
Konferenzbeitrag
Conference Paper
2017 Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T.
Konferenzbeitrag
Conference Paper
2017 Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling
Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard
Zeitschriftenaufsatz
Journal Article
2017 3D simulation of silicon-based single-electron transistors
Klüpfel, Fabian J.; Pichler, Peter
Konferenzbeitrag
Conference Paper
2016 Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat
Bayer, Christoph; Waltrich, Uwe; Schletz, Andreas; Bär, Eberhard; Meyer, Andreas
Patent
2016 A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact
Burenkov, Alex; Lorenz, Juergen
Konferenzbeitrag
Conference Paper
2016 Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias
Zeitschriftenaufsatz
Journal Article
2016 Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas
Konferenzbeitrag
Conference Paper
2016 Calculation of power losses in litz wire systems by coupling FEM and PEEC method
Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher; Bonse, Clemens
Zeitschriftenaufsatz
Journal Article
2016 Stacking of insulating substrates and a field plate to increase the PDIV for high voltage power modules
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas
Konferenzbeitrag
Conference Paper
2016 Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Schneider, Richard; Bär, Eberhard; Schletz, Andreas
Konferenzbeitrag
Conference Paper
2016 Influence of varying bundle structures on power electronic systems simulated by a coupled approach of FEM and PEEC
Rosskopf, A.; Schuster, S.; Endruschat, A.; Bär, E.
Konferenzbeitrag
Conference Paper
2016 Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
Conference Paper
2016 Empirical cluster modeling revisited
Pichler, Peter
Konferenzbeitrag
Conference Paper
2016 Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements
Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas
Zeitschriftenaufsatz
Journal Article
2016 Simulation of silicon-dot-based single-electron memory devices
Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen
Konferenzbeitrag
Conference Paper
2016 Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Konferenzbeitrag
Conference Paper
2016 Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Konferenzbeitrag
Conference Paper
2016 Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter
Konferenzbeitrag
Conference Paper
2016 Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength
Bayer, Christoph Friedrich; Waltrich, Uwe; Schneider, Richard; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas
Konferenzbeitrag
Conference Paper
2016 Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation
Baer, Eberhard; Niess, Juergen
Konferenzbeitrag
Conference Paper
2016 Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Konferenzbeitrag
Conference Paper
2016 Simulation of thermo-mechanical effect in bulk-silicon FinFETs
Burenkov, Alex; Lorenz, Jürgen
Zeitschriftenaufsatz
Journal Article
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2015 Simulation of plasma immersion ion implantation into silicon
Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.
Konferenzbeitrag
Conference Paper
2015 Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements
Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald
Konferenzbeitrag
Conference Paper
2015 Role of defects in the dopant diffusion in Si
Pichler, Peter
Aufsatz in Buch
Book Article
2015 Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA
Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick
Konferenzbeitrag
Conference Paper
2015 Simulation of the electric field strength in the vicinity of metallization edges on dielectric substrates
Bayer, Christoph; Bär, Eberhard; Waltrich, Uwe; Malipaard, Dirk; Schletz, Andreas
Zeitschriftenaufsatz
Journal Article
2015 Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Zeitschriftenaufsatz
Journal Article
2015 Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus
Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter
Zeitschriftenaufsatz
Journal Article
2015 Hierarchical variability-aware compact models of 20nm bulk CMOS
Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.
Konferenzbeitrag
Conference Paper
2015 Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias
Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried
Zeitschriftenaufsatz
Journal Article
2015 Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Zeitschriftenaufsatz
Journal Article
2015 Numerical evaluation of the ITRS transistor scaling
Nagy, R.; Burenkov, A.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
2015 Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method
Montoliu, C.; Baer, Eberhard; Cerda, J.; Colom, R.J.
Zeitschriftenaufsatz
Journal Article
2014 Influence of inner skin- and proximity effects on conduction in litz wires
Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher
Zeitschriftenaufsatz
Journal Article
2014 Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Zeitschriftenaufsatz
Journal Article
2014 Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules
Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter
Konferenzbeitrag
Conference Paper
2014 Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Konferenzbeitrag
Conference Paper
2014 Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.
Zeitschriftenaufsatz
Journal Article
2014 Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Konferenzbeitrag
Conference Paper
2014 Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Konferenzbeitrag
Conference Paper
2014 Simulation of the boron build-up formation during melting laser thermal annealing
Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.
Zeitschriftenaufsatz
Journal Article
2014 Modeling the annealing of dislocation loops in implanted c-Si solar cells
Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter
Zeitschriftenaufsatz
Journal Article
2014 Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter
Zeitschriftenaufsatz
Journal Article
2014 On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Zeitschriftenaufsatz
Journal Article
2014 Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Konferenzbeitrag
Conference Paper
2014 Calculation of ohmic losses in litz wires by coupling analytical and numerical methods
Roßkopf, Andreas; Joffe, Christopher; Bär, Eberhard
Konferenzbeitrag
Conference Paper
2014 Thermal properties of interconnects in power MOSFETs
Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian
Konferenzbeitrag
Conference Paper
2014 Deep energy levels of platinum-hydrogen complexes in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Konferenzbeitrag
Conference Paper
2014 Simulation of AsH3 plasma immersion ion implantation into silicon
Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank
Konferenzbeitrag
Conference Paper
2014 Strahlungsquelle und Verfahren zu deren Betrieb
Burenkov, Alexander
Patent
2014 Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.
Zeitschriftenaufsatz
Journal Article
2014 Three-dimensional simulation for the reliability and electrical performance of through-silicon vias
Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried
Konferenzbeitrag
Conference Paper
2014 Modeling platinum diffusion in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Zeitschriftenaufsatz
Journal Article
2014 Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Konferenzbeitrag
Conference Paper
2014 Simulation for statistical variability in realistic 20nm MOSFET
Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2013 Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen
Konferenzbeitrag
Conference Paper
2013 On the strain induced by arsenic into silicon
Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de
Konferenzbeitrag
Conference Paper
2013 Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.
Zeitschriftenaufsatz
Journal Article
2013 Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2013 Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.
Konferenzbeitrag
Conference Paper
2013 Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Konferenzbeitrag
Conference Paper
2013 Double patterning: Simulating a variability challenge for advanced transistors
Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
Conference Paper
2013 Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Konferenzbeitrag
Conference Paper
2013 Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015
Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
Conference Paper
2013 On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening
Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.
Konferenzbeitrag
Conference Paper
2013 On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Konferenzbeitrag
Conference Paper
2013 Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.
Konferenzbeitrag
Conference Paper
2013 Anomalous impurity segregation and local bonding fluctuation in l-Si
Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.
Zeitschriftenaufsatz
Journal Article
2013 Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2013 Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Konferenzbeitrag
Conference Paper
2013 Tunnel field-effect transistors with graphene channels
Svintsov, D.A.; Vyurkov, V.V.; Lukichev, V.F.; Orlikovsky, A.A.; Burenkov, A.; Oechsner, R.
Zeitschriftenaufsatz
Journal Article
2013 Extended model for platinum diffusion in silicon
Badr, E.; Pichler, P.; Schmidt, G.
Konferenzbeitrag
Conference Paper
2013 On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2013 A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter
Zeitschriftenaufsatz
Journal Article
2012 Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.
Konferenzbeitrag
Conference Paper
2012 Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2012 Correlation-aware analysis of the impact of process variations on circuit behavior
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Vortrag
Presentation
2012 Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
2012 Angular distributions of sputtered silicon at grazing gallium ion beam incidence
Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner
Zeitschriftenaufsatz
Journal Article
2012 BF3 PIII modeling: Implantation, amorphisation and diffusion
Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.
Konferenzbeitrag
Conference Paper
2012 Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred
Patent
2012 Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Zeitschriftenaufsatz
Journal Article
2012 Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2012 Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Vortrag
Presentation
2012 Simulation of BF3 plasma immersion ion implantation into silicon
Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.
Konferenzbeitrag
Conference Paper
2011 Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2011 Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, Tanja; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
Journal Article
2011 Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, Tanja; Jancke, R.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
Journal Article
2011 Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Konferenzbeitrag
Conference Paper
2011 Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2011 On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
2011 Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2011 Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen
Konferenzbeitrag
Conference Paper
2011 Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2011 Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Zeitschriftenaufsatz
Journal Article
2011 Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes
Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen
Poster
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2010 Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines
Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2010 Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Zeitschriftenaufsatz
Journal Article
2010 FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2010 Review of stress effects on dopant solubility in silicon and silicon-germanium layers
Bennett, N.S.; Ahn, C.; Cowern, N.E.B.; Pichler, P.
Konferenzbeitrag
Conference Paper
2010 Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2010 Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2010 Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2010 Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2010 Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.
Zeitschriftenaufsatz
Journal Article
2010 Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.
Zeitschriftenaufsatz
Journal Article
2010 Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric
Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe
Konferenzbeitrag
Conference Paper
2010 On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2010 2D Angular distributions of ion sputtered germanium atoms under grazing incidence
Sekowski, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2009 PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2009 Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2009 Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2009 Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.
Konferenzbeitrag
Conference Paper
2008 Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles
Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Konferenzbeitrag
Conference Paper
2008 Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing
Martinez-Limia, A.; Pichler, P.; Lerch, W.; Paul, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.
Zeitschriftenaufsatz
Journal Article
2008 Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes
Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2008 Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.
Zeitschriftenaufsatz
Journal Article
2008 Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon
Kunder, D.; Baer, E.
Zeitschriftenaufsatz
Journal Article
2008 A simulation study on the impact of lithographic process variations on CMOS device performance
Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.
Konferenzbeitrag
Conference Paper
2008 Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 Front-end junction and contact formation in future silicon/germanium based devices. Preface
Cristianoa, F.; Lauwers, A.; Pichler, P.; Feudel, T.; Windil, W.
Konferenzbeitrag
Conference Paper
2008 Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.
Zeitschriftenaufsatz
Journal Article
2008 Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 Modeling and simulation of advanced annealing processes
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Aufsatz in Buch
Book Article
2008 An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Zeitschriftenaufsatz
Journal Article
2008 All-quantum simulation of an ultra-small SOI MOSFET
Vyurkov, V.; Semenikhin, I.; Lukichev, V.; Burenkov, A.; Orlikovsky, A.
Konferenzbeitrag
Conference Paper
2008 Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 Modeling and simulation atomistic process simulation and memory modeling
Sonoda, K.; Pichler, P.
Konferenzbeitrag
Conference Paper
2008 Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2008 Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2008 Segregation of antimony to Si/SiO2 interfaces
Steen, C.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2008 On a computationally efficient approach to boron-interstitial clustering
Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Zeitschriftenaufsatz
Journal Article
2008 Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Konferenzbeitrag
Conference Paper
2008 Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.
Konferenzbeitrag
Conference Paper
2007 Characterization of the Segregation of Arsenic at the Interface SiO2/Si
Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.
Konferenzbeitrag
Conference Paper
2007 Upcoming challenges for process modeling
Pichler, P.
Konferenzbeitrag
Conference Paper
2007 Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon
Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2007 Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.
Konferenzbeitrag
Conference Paper
2007 On a computationally efficient approach to Boron-interstitial clustering
Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Konferenzbeitrag
Conference Paper
2007 Experimental and theoretical results of dopant activation by a combination of spike and flash annealing
Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.
Konferenzbeitrag
Conference Paper
2007 Characterization of the pile-up of As at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.
Konferenzbeitrag
Conference Paper
2007 Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches
Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.
Konferenzbeitrag
Conference Paper
2007 Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2006 Pattern Effects with the Mask Off
Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.
Konferenzbeitrag
Conference Paper
2006 Three-dimensional resist development simulation with discrete models
Schnattinger, T.; Baer, E.; Erdmann, A.
Zeitschriftenaufsatz
Journal Article
2006 Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.
Aufsatz in Buch
Book Article
2006 Verbindungsnetzwerk zwischen Halbleiterstrukturen
Burenkov, A.
Patent
2006 Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Zeitschriftenaufsatz
Journal Article
2006 A fast development simulation algorithm for discrete resist models
Schnattinger, T.; Bär, E.; Erdmann, A.
Konferenzbeitrag
Conference Paper
2006 Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.
Konferenzbeitrag
Conference Paper
2006 Mesoscopic resist processing simulation in optical lithography
Schnattinger, T.; Bär, E.; Erdmann, A.
Konferenzbeitrag
Conference Paper
2006 Flash Annealing Technology for USJ: Modeling and Metrology
Gelpey, J.; McCoy, S.; Camm, D.; Lerch, W.; Paul, S.; Pichler, P.; Borland, J.O.; Timans, P.
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2005 Comparison of different approaches for the simulation of topography evolution during lithography development
Schnattinger, T.; Bär, E.
Konferenzbeitrag
Conference Paper
2005 Ab initio identification of the nitrogen diffusion mechanism in silicon
Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.
Zeitschriftenaufsatz
Journal Article
2005 Advanced activation of ultra-shallow junctions using flash-assisted RTP
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.
Konferenzbeitrag
Conference Paper
2005 Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 3D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2004 Effect of oxygen on the diffusion of nitrogen implanted in silicon
Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.
Zeitschriftenaufsatz
Journal Article
2004 3D feature-scale simulation of sputter etching with coupling to equipment simulation
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 Three-dimensional simulation of ionized metal plasma vapor deposition
Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation
Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 Intrinsic point defects, impurities, and their diffusion in silicon
Pichler, P.
Buch
Book
2004 Polierverfahren in der Halbleiterfertigung
Pfitzner, L.; Bär, E.; Frickinger, J.; Nguyen, H.; Nutsch, A.
Konferenzbeitrag
Conference Paper
2004 Preface to the special issue on the EMRS 2004 Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering"
Mannino, G.; Feudel, T.; Pichler, P.; Servidori, M.
Konferenzbeitrag
Conference Paper
2004 Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments
Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.
Konferenzbeitrag
Conference Paper
2004 Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.
Konferenzbeitrag
Conference Paper
2004 Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2004 Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2004 A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Zeitschriftenaufsatz
Journal Article
2004 Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Konferenzbeitrag
Conference Paper
2004 On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Konferenzbeitrag
Conference Paper
2003 On the role of corner effect in FinFETs
Lorenz, J.; Burenkov, A.
Konferenzbeitrag
Conference Paper
2003 Diffusion and electrical activation of indium in silicon
Scalese, S.; Italia, M.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Barozzi, M.; Solmi, S.; Pichler, P.
Zeitschriftenaufsatz
Journal Article
2003 Figures of merit for CMOS switching speed
Burenkov, A.; Gund, C.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2003 Corner effect in double and triple gate FinFETs
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2003 Transient-diffusion effects
Stiebel, D.; Pichler, P.
Zeitschriftenaufsatz
Journal Article
2003 Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds
Pichler, P.
Konferenzbeitrag
Conference Paper
2003 Indium in silicon: A study on diffusion and electrical activation
Scalese, S.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Solmi, S.; Pichler, P.
Konferenzbeitrag
Conference Paper
2003 Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2003 Three-dimensional triangle-based simulation of etching processes and applications
Lenhart, O.; Bär, E.
Zeitschriftenaufsatz
Journal Article
2002 Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2002 Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
2002 Current understanding and modeling of boron-interstitial clusters
Pichler, P.
Konferenzbeitrag
Conference Paper
2002 Properties of vacancies in silicon determined from laser-annealing experiments
Pichler, P.
Konferenzbeitrag
Conference Paper
2002 Three-dimensional triangle-based simulation of etching processes
Lenhart, O.; Bär, E.
Konferenzbeitrag
Conference Paper
2002 Current status of models for transient phenomena in dopant diffusion and activation
Pichler, P.; Stiebel, D.
Zeitschriftenaufsatz
Journal Article
2002 Determination of aluminum diffusion parameters in silicon
Krause, O.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2001 A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Cowern, N.E.B.
Zeitschriftenaufsatz
Journal Article
2001 On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets
Burenkov, A.; Mu, Y.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2001 Compact modelling of process related effects on electrical behaviour of CMOS transistors
Burenkov, A.; Zhou, X.
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
2000 Vacancy-Nitrogen Complexes in Float-Zone Silicon
Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.
Konferenzbeitrag
Conference Paper
2000 Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2000 Modelling of intrinsic aluminum diffusion for future power devices
Krause, O.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2000 Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2000 3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
2000 Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.
Zeitschriftenaufsatz
Journal Article
2000 Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
2000 Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
2000 Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.
Zeitschriftenaufsatz
Journal Article
2000 Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
2000 A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
Journal Article
1999 A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
Conference Paper
1999 Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1999 Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1999 Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1999 Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
Conference Paper
1999 Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Konferenzbeitrag
Conference Paper
1999 Extraction of vacancy parameters from outdiffusion of zinc from silicon
Pichler, P.
Konferenzbeitrag
Conference Paper
1999 On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1998 Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1998 Coupled 3D process and device simulation of advanced MOSFETs
Tietzel, K.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1998 On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.
Konferenzbeitrag
Conference Paper
1998 Integrated three-dimensional topography simulation and its application to dual-damascene processing
Bär, E.; Henke, W.; List, S.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1998 Dreidimensionale Simulation von Schichtabscheideprozessen in der Halbleitertechnologie
Bär, E.
Dissertation
Doctoral Thesis
1998 Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1998 Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon
Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.
Zeitschriftenaufsatz
Journal Article
1998 Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1998 A reinterpretation of platinum-diffusion experiments
Pichler, P.
Konferenzbeitrag
Conference Paper
1998 Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
Journal Article
1998 Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1998 Recombination of point defects via extended defects and its influence
Stiebel, D.; Pichler, P.
Konferenzbeitrag
Conference Paper
1998 Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Aufsatz in Buch
Book Article
1997 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1997 Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1997 Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology
Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.
Konferenzbeitrag
Conference Paper
1997 Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Zeitschriftenaufsatz
Journal Article
1997 Vacancy-assisted oxygen precipitation phenomena in Si
Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.
Zeitschriftenaufsatz
Journal Article
1997 Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Zeitschriftenaufsatz
Journal Article
1997 Low energy implantation and transient enhanced diffusion
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Konferenzbeitrag
Conference Paper
1997 3D simulation for sub-micron metallization
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1997 Integrated three-dimensional topography simulation of contact hole processing
Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1997 Distortion of SIMS profiles due to ion beam mixing
Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.
Konferenzbeitrag
Conference Paper
1997 Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1997 The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
1997 Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1997 Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1997 Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
Conference Paper
1997 3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1996 Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte
Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.
Aufsatz in Buch
Book Article
1996 Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.
Aufsatz in Buch
Book Article
1996 Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1996 3-D simulation of LPCVD using segment-based topography discretization
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
1996 Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1996 Three-dimensional simulation of low-pressure chemical vapour deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1996 Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1996 3D simulation of LPCVD using segment based topography discretization
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
1995 Platinum diffusion at low temperatures
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Konferenzbeitrag
Conference Paper
1995 Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
Journal Article
1995 Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.
Zeitschriftenaufsatz
Journal Article
1995 Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Konferenzbeitrag
Conference Paper
1995 Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1995 Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1995 Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
Conference Paper
1995 On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1995 Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs
Bauer, H.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1995 Three-dimensional simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Aufsatz in Buch
Book Article
1995 3D simulation of tungsten low-pressure chemical vapor deposition in contact holes
Bär, E.; Lorenz, J.
Zeitschriftenaufsatz
Journal Article
1995 Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
Conference Paper
1995 3D simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Konferenzbeitrag
Conference Paper
1994 Simulation of buried layer experiments containing all four dopant species
Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.
Konferenzbeitrag
Conference Paper
1994 Dynamic behavior of arsenic clusters in silicon
Bauer, H.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1994 On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Zeitschriftenaufsatz
Journal Article
1994 Practical aspects of ion beam analysis of semiconductor structures
Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.
Zeitschriftenaufsatz
Journal Article
1994 3D Simulation of Low Pressure Chemical Vapor Deposition
Bär, E.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1994 Calculation of the transport matrix for the coupled diffusion of dopants and vacancies
List, S.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1994 Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Konferenzbeitrag
Conference Paper
1993 Diffusion and activation of arsenic implanted at high temperature in silicon
Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1993 Dopant migration caused by point defect gradients
Pichler, P.; List, S.
Zeitschriftenaufsatz
Journal Article
1993 Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1992 Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects
Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1992 Thermally activated dopant diffusion in crystalline silicon at 200 degree C.
Pichler, P.; Orlowski, M.
Zeitschriftenaufsatz
Journal Article
1992 Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Zeitschriftenaufsatz
Journal Article
1991 Radiation-enhanced diffusion during high-temperature ion implantation
Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr
Year
Titel/Autor:in
Title/Author
Publikationstyp
Publication Type
1990 Optimization of parameters for process simulation
Dürr, R.; Pichler, P.
Zeitschriftenaufsatz
Journal Article
1990 Trends in practical process simulation.
Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1990 Simulation of silicon semiconductor processing
Pichler, P.; Ryssel, H.
Zeitschriftenaufsatz
Journal Article
1989 Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Konferenzbeitrag
Conference Paper
1989 The influence of point defect concentration on the diffusion of gold in silicon
Zimmermann, H.; Pichler, P.
Konferenzbeitrag
Conference Paper
1989 One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1989 Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Konferenzbeitrag
Conference Paper
1988 Influence of initial conditions on point defect diffusion. Impact on models
Dürr, R.; Pichler, P.
Konferenzbeitrag
Conference Paper
Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica