Publications TCAD

2021 - 2025

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2025	Radial thermal transport from heated silicon nanowires: Molecular dynamics simulations and compact engineering models Burenkov, Alexander; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2024	Transient-Enhanced Diffusion of Implanted Aluminum in 4H-SiC Mletschnig, Kristijan Luka; Michałowski, Piotr Paweł; Pichler, Peter	Aufsatz in Buch Book Article
2024	TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing Rossi, Chiara; Müller, Jonas; Pichler, Peter; Piotr Michałowski, Paweł; Larrieu, Guilhem	Zeitschriftenaufsatz Journal Article
2023	CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications Borany, Johannes von; Engelmann, Hans-Jürgen; Heinig, Karl-Heinz; Amat, Esteve; Hlawacek, Gregor; Klüpfel, Fabian J.; Hübner, René; Möller, Wolfhard; Pourteau, Marie-Line; Rademaker, Guido; Rommel, Mathias; Baier, Leander; Pichler, Peter; Perez-Murano, Francesc; Tiron, Raluca	Zeitschriftenaufsatz Journal Article
2023	Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation Rossi, Chiara; Burenkov, Alex; Pichler, Peter; Bär, Eberhard; Müller, Jonas; Larrieu, Guilhem	Zeitschriftenaufsatz Journal Article
2023	Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework Julliard, Pierre-Louis; Johnsson, Anna; Zographos, Nik; Demoulin, Richard; Monflier, Richard; Jay, Antoine; Er-Riyahi, Oussama; Monsieur, Frédéric; Joblot, Sylvain; Deprat, Frédéric; Rideau, Denis; Pichler, Peter; Hémeryck, Anne; Cristiano, Fuccio	Zeitschriftenaufsatz Journal Article
2023	Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires Michałowski, Pawel Piotr; Müller, Jonas; Rossi, Chiara; Burenkov, Alexander; Bär, Eberhard; Larrieu, Guilhem; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2022	Comparison of Annealing Quality after 3e15/cm2 50 keV BF2+ implant between Rapid Thermal Annealing and Furnace Annealing Sturm-Rogon, Leonhard; Burenkov, Alexander; Cristiano, Fuccio; Eckert, Dirk; Johnsson, Anna; Neumeier, Karl; Pichler, Peter; Eisele, Ignaz; Lerch, Wilfried	Zeitschriftenaufsatz Journal Article
2022	Process Simulation Lorenz, Jürgen; Pichler, Peter	Aufsatz in Buch Book Article
2022	Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer Mletschnig, Kristijan Luka; Rommel, Mathias; Pobegen, Gregor; Schustereder, Werner; Pichler, Peter	Konferenzbeitrag Conference Paper
2022	A Review of Platinum Diffusion in Silicon and its Application for Lifetime Engineering in Power Devices Johnsson, Anna; Schmidt, Gerhard; Hauf, Moritz; Pichler, Peter	Review
2021	Tracing the Boron Diffusion into a Textured Silicon Solar Cell by Combining Boron Diffusion Simulation with Experimental and Simulated Scanning Transmission Electron Beam Induced Current Meyer, Tobias; Ehrlich, David A.; Pichler, Peter; Titova, Valeriya; Flathmann, Christoph; Schmidt, Jan; Seibt, Michael	Paper
2021	Intrinsic nano-diffusion-couple for studying high temperature diffusion in multi-component superalloys Eggeler, Yolita; Kubacka, Dorota; Pichler, Peter; Wu, Mingjian; Spiecker, Erdmann	Zeitschriftenaufsatz Journal Article
2021	Molecular Dynamics Simulations Supporting the Development of a Continuum Model of Heat Transport in Nanowires Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Sciuto, Alberto; La Magna, Antonino	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2016 - 2020

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2020	An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETs Albrecht, M.; Klüpfel, F.J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2020	Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections Sciuto, Alberto; Deretzis, Ioannis; Fisicaro, Giuseppe; Lombardo, Salvatore F.; Magna, Antonino la; Grimaldi, Maria Grazia; Huet, Karim; Lespinasse, Bobby; Verstraete, Armand; Curvers, Benoit; Bejenari, Igor; Burenkov, Alexander; Pichler, Peter	Konferenzbeitrag Conference Paper
2020	Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Magna, Antonino la	Konferenzbeitrag Conference Paper
2020	Study of the manufacture uncertainty impact of the hybrid SET-FET circuit Amat, E.; Moral, A. del; Klüpfel, F.; Bausells, J.; Perez-Murano, F.	Konferenzbeitrag Conference Paper
2019	Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance Klüpfel, Fabian J.	Zeitschriftenaufsatz Journal Article
2019	Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc	Zeitschriftenaufsatz Journal Article
2019	Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René	Zeitschriftenaufsatz Journal Article
2019	Process variability - technological challenge and design issue for nanoscale devices Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping	Zeitschriftenaufsatz Journal Article
2019	On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias	Zeitschriftenaufsatz Journal Article
2019	A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors Klüpfel, Fabian J.	Zeitschriftenaufsatz Journal Article
2019	Channeling in 4H-SiC from an Application Point of View Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, A.J.; Erlbacher, Tobias	Konferenzbeitrag Conference Paper
2018	Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter	Konferenzbeitrag Conference Paper
2018	Elektronik Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin	Aufsatz in Buch Book Article
2018	Optimized 2D positioning of windings in inductive components by genetic algorithm Rosskopf, Andreas; Knoerzer, Karsten; Baer, Eberhard; Ehrlich, Stefan	Konferenzbeitrag Conference Paper
2018	Process variability for devices at and beyond the 7 nm node Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail	Zeitschriftenaufsatz Journal Article
2018	Autonomous circuit design of a resonant converter (LLC) for on-board chargers using genetic algorithms Rosskopf, A.; Volmering, S.; Ditze, S.; Joffe, C.; Bär, E.	Konferenzbeitrag Conference Paper
2018	Process variability for devices at and beyond the 7 nm node Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail	Konferenzbeitrag Conference Paper
2018	Modeling of block copolymer dry etching for directed self-assembly lithography Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2018	The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning Baer, Eberhard; Lorenz, Juergen	Konferenzbeitrag Conference Paper
2018	Quantum dot location relevance into SET-FET circuits based on FinFET devices Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian	Konferenzbeitrag Conference Paper
2017	Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard	Zeitschriftenaufsatz Journal Article
2017	Optimization of 4H-SiC photodiodes as selective UV sensors Matthus, C.D.; Burenkov, A.; Erlbacher, T.	Konferenzbeitrag Conference Paper
2017	3D simulation of silicon-based single-electron transistors Klüpfel, Fabian J.; Pichler, Peter	Konferenzbeitrag Conference Paper
2016	Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat Bayer, Christoph; Waltrich, Uwe; Schletz, Andreas; Bär, Eberhard; Meyer, Andreas	Patent
2016	Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Schneider, Richard; Bär, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Influence of varying bundle structures on power electronic systems simulated by a coupled approach of FEM and PEEC Rosskopf, A.; Schuster, S.; Endruschat, A.; Bär, E.	Konferenzbeitrag Conference Paper
2016	Stacking of insulating substrates and a field plate to increase the PDIV for high voltage power modules Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Calculation of power losses in litz wire systems by coupling FEM and PEEC method Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher; Bonse, Clemens	Zeitschriftenaufsatz Journal Article
2016	Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, A.J.; Frey, Lothar	Konferenzbeitrag Conference Paper
2016	Empirical cluster modeling revisited Pichler, Peter	Konferenzbeitrag Conference Paper
2016	Simulation of thermo-mechanical effect in bulk-silicon FinFETs Burenkov, Alex; Lorenz, Jürgen	Zeitschriftenaufsatz Journal Article
2016	Simulation of silicon-dot-based single-electron memory devices Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2016	Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen	Konferenzbeitrag Conference Paper
2016	Simulation of process variations in FinFET transistor patterning Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen	Konferenzbeitrag Conference Paper
2016	Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation Baer, Eberhard; Niess, Juergen	Konferenzbeitrag Conference Paper
2016	Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas	Zeitschriftenaufsatz Journal Article
2016	Modeling the post-implantation annealing of platinum Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Konferenzbeitrag Conference Paper
2016	Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength Bayer, Christoph Friedrich; Waltrich, Uwe; Schneider, Richard; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Simulating wafer bow for integrated capacitors using a multiscale approach Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter	Konferenzbeitrag Conference Paper
2016	Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias	Zeitschriftenaufsatz Journal Article
2016	A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact Burenkov, Alex; Lorenz, Juergen	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2011 - 2015

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2015	Role of defects in the dopant diffusion in Si Pichler, Peter	Aufsatz in Buch Book Article
2015	Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick	Konferenzbeitrag Conference Paper
2015	Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent	Zeitschriftenaufsatz Journal Article
2015	Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2015	Simulation of the electric field strength in the vicinity of metallization edges on dielectric substrates Bayer, Christoph; Bär, Eberhard; Waltrich, Uwe; Malipaard, Dirk; Schletz, Andreas	Zeitschriftenaufsatz Journal Article
2015	Numerical evaluation of the ITRS transistor scaling Nagy, R.; Burenkov, A.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2015	Simulation of plasma immersion ion implantation into silicon Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2015	Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald	Konferenzbeitrag Conference Paper
2015	Hierarchical variability-aware compact models of 20nm bulk CMOS Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.	Konferenzbeitrag Conference Paper
2015	Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method Montoliu, C.; Baer, Eberhard; Cerda, J.; Colom, R.J.	Zeitschriftenaufsatz Journal Article
2015	Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried	Zeitschriftenaufsatz Journal Article
2015	Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Modeling the annealing of dislocation loops in implanted c-Si solar cells Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Simulation of the boron build-up formation during melting laser thermal annealing Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2014	Challenges and opportunities for process modeling in the nanotechnology era Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2014	Influence of inner skin- and proximity effects on conduction in litz wires Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher	Zeitschriftenaufsatz Journal Article
2014	Calculation of ohmic losses in litz wires by coupling analytical and numerical methods Roßkopf, Andreas; Joffe, Christopher; Bär, Eberhard	Konferenzbeitrag Conference Paper
2014	Thermal properties of interconnects in power MOSFETs Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian	Konferenzbeitrag Conference Paper
2014	Deep energy levels of platinum-hydrogen complexes in silicon Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Konferenzbeitrag Conference Paper
2014	Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter	Konferenzbeitrag Conference Paper
2014	Advanced extra functionality CMOS-based devices Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.	Zeitschriftenaufsatz Journal Article
2014	Variability-aware compact model strategy for 20-nm bulk MOSFETs Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen	Konferenzbeitrag Conference Paper
2014	Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter	Konferenzbeitrag Conference Paper
2014	Large boron-interstitial cluster modelling in BF3 plasma implanted silicon Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2014	Simultaneous simulation of systematic and stochastic process variations Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David	Konferenzbeitrag Conference Paper
2014	Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.	Konferenzbeitrag Conference Paper
2014	Strahlungsquelle und Verfahren zu deren Betrieb Burenkov, Alexander	Patent
2014	Simulation of AsH3 plasma immersion ion implantation into silicon Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank	Konferenzbeitrag Conference Paper
2014	Three-dimensional simulation for the reliability and electrical performance of through-silicon vias Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried	Konferenzbeitrag Conference Paper
2014	Modeling platinum diffusion in silicon Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Zeitschriftenaufsatz Journal Article
2014	Simulation for statistical variability in realistic 20nm MOSFET Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2014	Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, A.J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena	Konferenzbeitrag Conference Paper
2014	On an improved boron segregation calibration from a particularly sensitive power MOS process Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.	Zeitschriftenaufsatz Journal Article
2013	Double patterning: Simulating a variability challenge for advanced transistors Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2013	Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter	Konferenzbeitrag Conference Paper
2013	Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.	Konferenzbeitrag Conference Paper
2013	Melt depth and time variations during pulsed laser thermal annealing with one and more pulses Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.	Konferenzbeitrag Conference Paper
2013	Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.	Konferenzbeitrag Conference Paper
2013	On the strain induced by arsenic into silicon Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de	Konferenzbeitrag Conference Paper
2013	Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.	Konferenzbeitrag Conference Paper
2013	Tunnel field-effect transistors with graphene channels Svintsov, D.A.; Vyurkov, V.V.; Lukichev, V.F.; Orlikovsky, A.A.; Burenkov, A.; Oechsner, R.	Zeitschriftenaufsatz Journal Article
2013	On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.	Zeitschriftenaufsatz Journal Article
2013	Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2013	Extended model for platinum diffusion in silicon Badr, E.; Pichler, P.; Schmidt, G.	Konferenzbeitrag Conference Paper
2013	On the calculation of hall factors for the characterization of electronic devices Uhnevionak, V.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	A comprehensive model for the diffusion of boron in silicon in presence of fluorine Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2013	Anomalous impurity segregation and local bonding fluctuation in l-Si Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.	Zeitschriftenaufsatz Journal Article
2013	Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.	Konferenzbeitrag Conference Paper
2013	On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.	Konferenzbeitrag Conference Paper
2013	Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015 Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2012	Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.	Poster
2012	Correlation-aware analysis of the impact of process variations on circuit behavior Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian	Vortrag Presentation
2012	Enthalpy based modeling of pulsed excimer laser annealing for process simulation Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.	Konferenzbeitrag Conference Paper
2012	Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2012	Angular distributions of sputtered silicon at grazing gallium ion beam incidence Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner	Zeitschriftenaufsatz Journal Article
2012	Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred	Patent
2012	BF3 PIII modeling: Implantation, amorphisation and diffusion Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.	Konferenzbeitrag Conference Paper
2012	Precipitation of antimony implanted into silicon Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2012	Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.	Vortrag Presentation
2012	Simulation of BF3 plasma immersion ion implantation into silicon Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2012	Modeling boron profiles in silicon after pulsed excimer laser annealing Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2011	Hierarchical simulation of process variations and their impact on circuits and systems: Methodology Lorenz, J.; Bär, E.; Clees, Tanja; Jancke, R.; Salzig, C.P.J; Selberherr, S.	Zeitschriftenaufsatz Journal Article
2011	Hierarchical simulation of process variations and their impact on circuits and systems: Results Lorenz, J.K.; Bär, E.; Clees, Tanja; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.	Zeitschriftenaufsatz Journal Article
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2011	Simulation of plasma immersion ion implantation Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2011	On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2011	Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2011	Self-heating effects in nano-scaled MOSFETs and thermal aware compact models Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2011	Germanium substrate loss during thermal processing Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2011	Challenges in TCAD simulations of tunneling field effect transistors Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2011	Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.	Zeitschriftenaufsatz Journal Article
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen	Poster

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2006 - 2010

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2010	Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Review of stress effects on dopant solubility in silicon and silicon-germanium layers Bennett, N.S.; Ahn, C.; Cowern, N.E.B.; Pichler, P.	Konferenzbeitrag Conference Paper
2010	FD SOI MOSFET compact modeling including process variations Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2010	Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD) Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.	Zeitschriftenaufsatz Journal Article
2010	On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells Kampen, C.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe	Konferenzbeitrag Conference Paper
2010	Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.	Zeitschriftenaufsatz Journal Article
2010	Impact of technological options for 22 nm SOI CMOS transistors on IC performance Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Future challenges in CMOS process modelling Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.	Zeitschriftenaufsatz Journal Article
2010	Lithography induced layout variations in 6-T SRAM cells Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	2D Angular distributions of ion sputtered germanium atoms under grazing incidence Sekowski, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2010	Honeycomb voids due to ion implantation in germanium Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2009	PD-SOI MOSFETs: Interface effect on point defects and doping profiles Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2009	Simulation assessment of process options for advanced CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2009	Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2009	Impact of lithography variations on advanced CMOS devices Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.	Konferenzbeitrag Conference Paper
2008	Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	A simulation study on the impact of lithographic process variations on CMOS device performance Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2008	Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon Kunder, D.; Baer, E.	Zeitschriftenaufsatz Journal Article
2008	Detailed arsenic concentration profiles at Si/SiO2 interfaces Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.	Zeitschriftenaufsatz Journal Article
2008	Front-end junction and contact formation in future silicon/germanium based devices. Preface Cristianoa, F.; Lauwers, A.; Pichler, P.; Feudel, T.; Windil, W.	Konferenzbeitrag Conference Paper
2008	Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2008	Process models for advanced annealing schemes and their use in device simulation Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.	Konferenzbeitrag Conference Paper
2008	On a computationally efficient approach to boron-interstitial clustering Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.	Zeitschriftenaufsatz Journal Article
2008	An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.	Zeitschriftenaufsatz Journal Article
2008	Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.	Konferenzbeitrag Conference Paper
2008	Application-driven simulation of nanoscaled CMOS transistors and circuits Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2008	Segregation of antimony to Si/SiO2 interfaces Steen, C.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2008	Modeling and simulation of advanced annealing processes Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.	Aufsatz in Buch Book Article
2008	Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing Martinez-Limia, A.; Pichler, P.; Lerch, W.; Paul, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2008	Distribution and segregation of arsenic at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.	Zeitschriftenaufsatz Journal Article
2008	Advanced annealing strategies for the 32 nm node Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Modeling and simulation atomistic process simulation and memory modeling Sonoda, K.; Pichler, P.	Konferenzbeitrag Conference Paper
2008	Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	All-quantum simulation of an ultra-small SOI MOSFET Vyurkov, V.; Semenikhin, I.; Lukichev, V.; Burenkov, A.; Orlikovsky, A.	Konferenzbeitrag Conference Paper
2008	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	On the stability of fully depleted SOI MOSFETs under lithography process variations Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2007	Upcoming challenges for process modeling Pichler, P.	Konferenzbeitrag Conference Paper
2007	Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2007	Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2007	Experimental and theoretical results of dopant activation by a combination of spike and flash annealing Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.	Konferenzbeitrag Conference Paper
2007	Characterization of the pile-up of As at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.	Konferenzbeitrag Conference Paper
2007	On a computationally efficient approach to Boron-interstitial clustering Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.	Konferenzbeitrag Conference Paper
2007	Characterization of the Segregation of Arsenic at the Interface SiO2/Si Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.	Konferenzbeitrag Conference Paper
2007	Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2007	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2006	Pattern Effects with the Mask Off Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.	Konferenzbeitrag Conference Paper
2006	Three-dimensional resist development simulation with discrete models Schnattinger, T.; Baer, E.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2006	Quantum mechanical studies of boron clustering in silicon Deák, P.; Gali, A.; Pichler, P.	Aufsatz in Buch Book Article
2006	Flash Annealing Technology for USJ: Modeling and Metrology Gelpey, J.; McCoy, S.; Camm, D.; Lerch, W.; Paul, S.; Pichler, P.; Borland, J.O.; Timans, P.	Konferenzbeitrag Conference Paper
2006	Mesoscopic resist processing simulation in optical lithography Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Process-induced diffusion phenomena in advanced CMOS technologies Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.	Konferenzbeitrag Conference Paper
2006	Verbindungsnetzwerk zwischen Halbleiterstrukturen Burenkov, A.	Patent
2006	A fast development simulation algorithm for discrete resist models Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Diffusion and activation of dopants in silicon and advanced silicon-based materials Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.	Zeitschriftenaufsatz Journal Article

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2001 - 2005

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2005	Advanced activation of ultra-shallow junctions using flash-assisted RTP Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.	Konferenzbeitrag Conference Paper
2005	Ab initio identification of the nitrogen diffusion mechanism in silicon Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.	Zeitschriftenaufsatz Journal Article
2005	Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2005	Comparison of different approaches for the simulation of topography evolution during lithography development Schnattinger, T.; Bär, E.	Konferenzbeitrag Conference Paper
2004	Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Quantum mechanical studies of boron clustering in silicon Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Intrinsic point defects, impurities, and their diffusion in silicon Pichler, P.	Buch Book
2004	Three-dimensional simulation of ionized metal plasma vapor deposition Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	3D simulation of process effects limiting FinFET performance and scalability Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2004	Effect of oxygen on the diffusion of nitrogen implanted in silicon Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.	Zeitschriftenaufsatz Journal Article
2004	Polierverfahren in der Halbleiterfertigung Pfitzner, L.; Bär, E.; Frickinger, J.; Nguyen, H.; Nutsch, A.	Konferenzbeitrag Conference Paper
2004	On the modeling of transient diffusion and activation of boron during post-implantation annealing Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.	Konferenzbeitrag Conference Paper
2004	Adaptive surface triangulations for 3D process simulation Nguyen, P.-H.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2004	A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.	Zeitschriftenaufsatz Journal Article
2004	Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.	Konferenzbeitrag Conference Paper
2004	Preface to the special issue on the EMRS 2004 Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering" Mannino, G.; Feudel, T.; Pichler, P.; Servidori, M.	Konferenzbeitrag Conference Paper
2004	3D feature-scale simulation of sputter etching with coupling to equipment simulation Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2004	Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.	Konferenzbeitrag Conference Paper
2003	Diffusion and electrical activation of indium in silicon Scalese, S.; Italia, M.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Barozzi, M.; Solmi, S.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2003	Corner effect in double and triple gate FinFETs Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2003	Indium in silicon: A study on diffusion and electrical activation Scalese, S.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Solmi, S.; Pichler, P.	Konferenzbeitrag Conference Paper
2003	Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds Pichler, P.	Konferenzbeitrag Conference Paper
2003	Transient-diffusion effects Stiebel, D.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2003	Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2003	Three-dimensional triangle-based simulation of etching processes and applications Lenhart, O.; Bär, E.	Zeitschriftenaufsatz Journal Article
2003	Figures of merit for CMOS switching speed Burenkov, A.; Gund, C.; Lorenz, J.	Konferenzbeitrag Conference Paper
2003	On the role of corner effect in FinFETs Lorenz, J.; Burenkov, A.	Konferenzbeitrag Conference Paper
2002	Current status of models for transient phenomena in dopant diffusion and activation Pichler, P.; Stiebel, D.	Zeitschriftenaufsatz Journal Article
2002	Properties of vacancies in silicon determined from laser-annealing experiments Pichler, P.	Konferenzbeitrag Conference Paper
2002	Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2002	Determination of aluminum diffusion parameters in silicon Krause, O.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2002	Current understanding and modeling of boron-interstitial clusters Pichler, P.	Konferenzbeitrag Conference Paper
2002	Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2002	Three-dimensional triangle-based simulation of etching processes Lenhart, O.; Bär, E.	Konferenzbeitrag Conference Paper
2001	On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets Burenkov, A.; Mu, Y.; Ryssel, H.	Konferenzbeitrag Conference Paper
2001	A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion Stiebel, D.; Pichler, P.; Cowern, N.E.B.	Zeitschriftenaufsatz Journal Article
2001	Compact modelling of process related effects on electrical behaviour of CMOS transistors Burenkov, A.; Zhou, X.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1996 - 2000

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2000	Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Modelling of intrinsic aluminum diffusion for future power devices Krause, O.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Phosphorus ion shower implantation for special power IC applications Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2000	Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation Burenkov, A.; Tietzel, K.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2000	Vacancy-Nitrogen Complexes in Float-Zone Silicon Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.	Konferenzbeitrag Conference Paper
2000	Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.	Zeitschriftenaufsatz Journal Article
2000	Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2000	A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
2000	Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.	Zeitschriftenaufsatz Journal Article
2000	3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	A computationally efficient method for three-dimensional simulation of ion implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1999	Extraction of vacancy parameters from outdiffusion of zinc from silicon Pichler, P.	Konferenzbeitrag Conference Paper
1999	Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering Stiebel, D.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.	Konferenzbeitrag Conference Paper
1999	On the influence of boron-interstitial complexes on transient enhanced diffusion Stiebel, D.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
1999	Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.	Konferenzbeitrag Conference Paper
1998	Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1998	Coupled 3D process and device simulation of advanced MOSFETs Tietzel, K.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
1998	Integrated three-dimensional topography simulation and its application to dual-damascene processing Bär, E.; Henke, W.; List, S.; Lorenz, J.	Konferenzbeitrag Conference Paper
1998	On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.	Konferenzbeitrag Conference Paper
1998	Dreidimensionale Simulation von Schichtabscheideprozessen in der Halbleitertechnologie Bär, E.	Dissertation Doctoral Thesis
1998	Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1998	A reinterpretation of platinum-diffusion experiments Pichler, P.	Konferenzbeitrag Conference Paper
1998	Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
1998	Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.	Zeitschriftenaufsatz Journal Article
1998	Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1998	Influence of RTP on Vacancy Concentrations Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.	Aufsatz in Buch Book Article
1998	Optimization of critical ion implantation steps in 0.18 mu m CMOS technology Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1998	Recombination of point defects via extended defects and its influence Stiebel, D.; Pichler, P.	Konferenzbeitrag Conference Paper
1997	Vacancy-assisted oxygen precipitation phenomena in Si Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.	Zeitschriftenaufsatz Journal Article
1997	Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2 Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1997	Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.	Konferenzbeitrag Conference Paper
1997	Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Three-dimensional simulation of ion implantation Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1997	Integrated three-dimensional topography simulation of contact hole processing Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
1997	Low energy implantation and transient enhanced diffusion Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.	Konferenzbeitrag Conference Paper
1997	3D simulation for sub-micron metallization Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1997	Distortion of SIMS profiles due to ion beam mixing Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.	Konferenzbeitrag Conference Paper
1997	Observation of vacancy enhancement during rapid thermal annealing in nitrogen Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.	Zeitschriftenaufsatz Journal Article
1997	3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1997	Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.	Zeitschriftenaufsatz Journal Article
1996	Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.	Aufsatz in Buch Book Article
1996	3-D simulation of LPCVD using segment-based topography discretization Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1996	Three-dimensional simulation of ion implantation Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.	Aufsatz in Buch Book Article
1996	Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	3D simulation of LPCVD using segment based topography discretization Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1996	Three-dimensional simulation of low-pressure chemical vapour deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1991 - 1995

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
1995	Trajectory split method for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
1995	Platinum diffusion at low temperatures Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.	Konferenzbeitrag Conference Paper
1995	Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1995	Three-dimensional simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.	Aufsatz in Buch Book Article
1995	On the implantation models for simulation of the FOND devices Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1995	3D simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.	Konferenzbeitrag Conference Paper
1995	Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs Bauer, H.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1995	Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1995	Analytical model for phosphorus large angle tilted implantation Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1995	3D simulation of tungsten low-pressure chemical vapor deposition in contact holes Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1995	Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.	Zeitschriftenaufsatz Journal Article
1995	Determination of vacancy concentration in float zone and Czochralski silicon Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.	Konferenzbeitrag Conference Paper
1995	Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1994	Dynamic behavior of arsenic clusters in silicon Bauer, H.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1994	Simulation of buried layer experiments containing all four dopant species Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.	Konferenzbeitrag Conference Paper
1994	On modeling of ion implantation at high temperatures Pichler, P.; Schork, R.	Zeitschriftenaufsatz Journal Article
1994	Practical aspects of ion beam analysis of semiconductor structures Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.	Zeitschriftenaufsatz Journal Article
1994	Calculation of the transport matrix for the coupled diffusion of dopants and vacancies List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1994	3D Simulation of Low Pressure Chemical Vapor Deposition Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
1994	Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.	Konferenzbeitrag Conference Paper
1993	Dopant migration caused by point defect gradients Pichler, P.; List, S.	Zeitschriftenaufsatz Journal Article
1993	Diffusion and activation of arsenic implanted at high temperature in silicon Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1993	Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1992	Thermally activated dopant diffusion in crystalline silicon at 200 degree C. Pichler, P.; Orlowski, M.	Zeitschriftenaufsatz Journal Article
1992	Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures. Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.	Zeitschriftenaufsatz Journal Article
1992	Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1991	Radiation-enhanced diffusion during high-temperature ion implantation Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1986 - 1990

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
1990	Optimization of parameters for process simulation Dürr, R.; Pichler, P.	Zeitschriftenaufsatz Journal Article
1990	Trends in practical process simulation. Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1990	Simulation of silicon semiconductor processing Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1989	One- and two-dimensional process simulation with ICECREM and COMPLAN. Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1989	Programs for VLSI process simulation Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1989	The influence of point defect concentration on the diffusion of gold in silicon Zimmermann, H.; Pichler, P.	Konferenzbeitrag Conference Paper
1989	Simulation of complete process step sequences in silicon technology Pichler, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
1988	Influence of initial conditions on point defect diffusion. Impact on models Dürr, R.; Pichler, P.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

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