Publications TCAD

2021 - 2023

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2023	CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications Borany, Johannes von; Engelmann, Hans-Jürgen; Heinig, Karl-Heinz; Amat, Esteve; Hlawacek, Gregor; Klüpfel, Fabian J.; Hübner, René; Möller, Wolfhard; Pourteau, Marie-Line; Rademaker, Guido; Rommel, Mathias; Baier, Leander; Pichler, Peter; Perez-Murano, Francesc; Tiron, Raluca	Zeitschriftenaufsatz Journal Article
2023	Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework Julliard, Pierre-Louis; Johnsson, Anna; Zographos, Nik; Demoulin, Richard; Monflier, Richard; Jay, Antoine; Er-Riyahi, Oussama; Monsieur, Frédéric; Joblot, Sylvain; Deprat, Frédéric; Rideau, Denis; Pichler, Peter; Hémeryck, Anne; Cristiano, Fuccio	Zeitschriftenaufsatz Journal Article
2023	Secondary ion mass spectrometry quantification of boron distribution in an array of silicon nanowires Michałowski, Pawel Piotr; Müller, Jonas; Rossi, Chiara; Burenkov, Alexander; Bär, Eberhard; Larrieu, Guilhem; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2023	Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation Rossi, Chiara; Burenkov, Alex; Pichler, Peter; Bär, Eberhard; Müller, Jonas; Larrieu, Guilhem	Zeitschriftenaufsatz Journal Article
2022	Comparison of Annealing Quality after 3e15/cm2 50 keV BF2+ implant between Rapid Thermal Annealing and Furnace Annealing Sturm-Rogon, Leonhard; Burenkov, Alexander; Cristiano, Fuccio; Eckert, Dirk; Johnsson, Anna; Neumeier, Karl; Pichler, Peter; Eisele, Ignaz; Lerch, Wilfried	Zeitschriftenaufsatz Journal Article
2022	Process Simulation Lorenz, Jürgen; Pichler, Peter	Aufsatz in Buch Book Article
2022	Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer Mletschnig, Kristijan Luka; Rommel, Mathias; Pobegen, Gregor; Schustereder, Werner; Pichler, Peter	Konferenzbeitrag Conference Paper
2022	A Review of Platinum Diffusion in Silicon and its Application for Lifetime Engineering in Power Devices Johnsson, Anna; Schmidt, Gerhard; Hauf, Moritz; Pichler, Peter	Review
2021	Tracing the Boron Diffusion into a Textured Silicon Solar Cell by Combining Boron Diffusion Simulation with Experimental and Simulated Scanning Transmission Electron Beam Induced Current Meyer, Tobias; Ehrlich, David A.; Pichler, Peter; Titova, Valeriya; Flathmann, Christoph; Schmidt, Jan; Seibt, Michael	Paper
2021	Intrinsic nano-diffusion-couple for studying high temperature diffusion in multi-component superalloys Eggeler, Yolita; Kubacka, Dorota; Pichler, Peter; Wu, Mingjian; Spiecker, Erdmann	Zeitschriftenaufsatz Journal Article
2021	Molecular Dynamics Simulations Supporting the Development of a Continuum Model of Heat Transport in Nanowires Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Sciuto, Alberto; La Magna, Antonino	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2016 - 2020

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2020	An Iterative Surface Potential Algorithm including Interface Traps for Compact Modeling of SiC-MOSFETs Albrecht, M.; Klüpfel, F.J.; Erlbacher, T.	Zeitschriftenaufsatz Journal Article
2020	Study of the manufacture uncertainty impact of the hybrid SET-FET circuit Amat, E.; Moral, A. del; Klüpfel, F.; Bausells, J.; Perez-Murano, F.	Konferenzbeitrag Conference Paper
2020	Advanced Simulations on Laser Annealing: Explosive Crystallization and Phonon Transport Corrections Sciuto, Alberto; Deretzis, Ioannis; Fisicaro, Giuseppe; Lombardo, Salvatore F.; Magna, Antonino la; Grimaldi, Maria Grazia; Huet, Karim; Lespinasse, Bobby; Verstraete, Armand; Curvers, Benoit; Bejenari, Igor; Burenkov, Alexander; Pichler, Peter	Konferenzbeitrag Conference Paper
2020	Molecular Dynamics Modeling of the Radial Heat Transfer from Silicon Nanowires Bejenari, Igor; Burenkov, Alexander; Pichler, Peter; Deretzis, Ioannis; Magna, Antonino la	Konferenzbeitrag Conference Paper
2019	Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc	Zeitschriftenaufsatz Journal Article
2019	Channeling in 4H-SiC from an Application Point of View Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, A.J.; Erlbacher, Tobias	Konferenzbeitrag Conference Paper
2019	Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René	Zeitschriftenaufsatz Journal Article
2019	Process variability - technological challenge and design issue for nanoscale devices Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping	Zeitschriftenaufsatz Journal Article
2019	Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance Klüpfel, Fabian J.	Zeitschriftenaufsatz Journal Article
2019	A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors Klüpfel, Fabian J.	Zeitschriftenaufsatz Journal Article
2019	On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias	Zeitschriftenaufsatz Journal Article
2018	Elektronik Bauer, Anton; Bär, Eberhard; Erlbacher, Tobias; Friedrich, Jochen; Lorenz, Jürgen; Rommel, Mathias; Schellenberger, Martin	Aufsatz in Buch Book Article
2018	Optimized 2D positioning of windings in inductive components by genetic algorithm Rosskopf, Andreas; Knoerzer, Karsten; Baer, Eberhard; Ehrlich, Stefan	Konferenzbeitrag Conference Paper
2018	Quantum dot location relevance into SET-FET circuits based on FinFET devices Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian	Konferenzbeitrag Conference Paper
2018	Modeling of block copolymer dry etching for directed self-assembly lithography Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2018	Autonomous circuit design of a resonant converter (LLC) for on-board chargers using genetic algorithms Rosskopf, A.; Volmering, S.; Ditze, S.; Joffe, C.; Bär, E.	Konferenzbeitrag Conference Paper
2018	Process variability for devices at and beyond the 7 nm node Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail	Konferenzbeitrag Conference Paper
2018	Process variability for devices at and beyond the 7 nm node Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail	Zeitschriftenaufsatz Journal Article
2018	Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter	Konferenzbeitrag Conference Paper
2018	The effect of etching and deposition processes on the width of spacers created during self-aligned double patterning Baer, Eberhard; Lorenz, Juergen	Konferenzbeitrag Conference Paper
2017	Optimization of 4H-SiC photodiodes as selective UV sensors Matthus, C.D.; Burenkov, A.; Erlbacher, T.	Konferenzbeitrag Conference Paper
2017	3D simulation of silicon-based single-electron transistors Klüpfel, Fabian J.; Pichler, Peter	Konferenzbeitrag Conference Paper
2017	Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard	Zeitschriftenaufsatz Journal Article
2016	Verfahren zum Herstellen eines Metall-Keramik-Substrates und zugehöriges Metall-Keramik-Substrat Bayer, Christoph; Waltrich, Uwe; Schletz, Andreas; Bär, Eberhard; Meyer, Andreas	Patent
2016	Enhancement of the partial discharge inception voltage of DBCs by adjusting the permittivity of the encapsulation Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Schneider, Richard; Bär, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Enhancing partial discharge inception voltage of DBCs by geometrical variations based on simulations of the electric field strength Bayer, Christoph Friedrich; Waltrich, Uwe; Schneider, Richard; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact Burenkov, Alex; Lorenz, Juergen	Konferenzbeitrag Conference Paper
2016	Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias	Zeitschriftenaufsatz Journal Article
2016	Influence of varying bundle structures on power electronic systems simulated by a coupled approach of FEM and PEEC Rosskopf, A.; Schuster, S.; Endruschat, A.; Bär, E.	Konferenzbeitrag Conference Paper
2016	Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen	Konferenzbeitrag Conference Paper
2016	Calculation of power losses in litz wire systems by coupling FEM and PEEC method Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher; Bonse, Clemens	Zeitschriftenaufsatz Journal Article
2016	Stacking of insulating substrates and a field plate to increase the PDIV for high voltage power modules Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Simulation of process variations in FinFET transistor patterning Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen	Konferenzbeitrag Conference Paper
2016	Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Bär, Eberhard; Schletz, Andreas	Zeitschriftenaufsatz Journal Article
2016	Simulation of silicon-dot-based single-electron memory devices Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2016	Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, A.J.; Frey, Lothar	Konferenzbeitrag Conference Paper
2016	Empirical cluster modeling revisited Pichler, Peter	Konferenzbeitrag Conference Paper
2016	Simulation of thermo-mechanical effect in bulk-silicon FinFETs Burenkov, Alex; Lorenz, Jürgen	Zeitschriftenaufsatz Journal Article
2016	Simulating wafer bow for integrated capacitors using a multiscale approach Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter	Konferenzbeitrag Conference Paper
2016	Partial discharges in ceramic substrates - correlation of electric field strength simulations with phase resolved partial discharge measurements Bayer, Christoph Friedrich; Waltrich, Uwe; Soueidan, Amal; Baer, Eberhard; Schletz, Andreas	Konferenzbeitrag Conference Paper
2016	Modeling the post-implantation annealing of platinum Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Konferenzbeitrag Conference Paper
2016	Equipment simulation for studying the growth rate and its uniformity of oxide layers deposited by plasma-enhanced oxidation Baer, Eberhard; Niess, Juergen	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2011 - 2015

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2015	Role of defects in the dopant diffusion in Si Pichler, Peter	Aufsatz in Buch Book Article
2015	Simulation of the electric field strength in the vicinity of metallization edges on dielectric substrates Bayer, Christoph; Bär, Eberhard; Waltrich, Uwe; Malipaard, Dirk; Schletz, Andreas	Zeitschriftenaufsatz Journal Article
2015	Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent	Zeitschriftenaufsatz Journal Article
2015	Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2015	Simulation of plasma immersion ion implantation into silicon Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2015	Thermal simulation of paralleled SiC PiN diodes in a module designed for 6.5 kV/1 kA Bayer, Christoph Friedrich; Bär, Eberhard; Kallinger, Birgit; Berwian, Patrick	Konferenzbeitrag Conference Paper
2015	Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald	Konferenzbeitrag Conference Paper
2015	Improvement of feature-scale profile evolution in a silicon dioxide plasma etching simulator using the level set method Montoliu, C.; Baer, Eberhard; Cerda, J.; Colom, R.J.	Zeitschriftenaufsatz Journal Article
2015	Numerical evaluation of the ITRS transistor scaling Nagy, R.; Burenkov, A.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2015	Coupled simulation to determine the impact of across wafer variations in oxide PECVD on electrical and reliability parameters of through-silicon vias Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Minixhofer, Rainer; Filipovic, Lado; Orio, Roberto de; Selberherr, Siegfried	Zeitschriftenaufsatz Journal Article
2015	Hierarchical variability-aware compact models of 20nm bulk CMOS Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.	Konferenzbeitrag Conference Paper
2015	Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Strahlungsquelle und Verfahren zu deren Betrieb Burenkov, Alexander	Patent
2014	Three-dimensional simulation for the reliability and electrical performance of through-silicon vias Filipovic, Lado; Rudolf, Florian; Bär, Eberhard; Evanschitzky, Peter; Lorenz, Jürgen; Roger, Frederic; Singulani, Anderson; Minixhofer, Rainer; Selberherr, Siegfried	Konferenzbeitrag Conference Paper
2014	Simulation of AsH3 plasma immersion ion implantation into silicon Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank	Konferenzbeitrag Conference Paper
2014	Influence of inner skin- and proximity effects on conduction in litz wires Roßkopf, Andreas; Bär, Eberhard; Joffe, Christopher	Zeitschriftenaufsatz Journal Article
2014	Advanced extra functionality CMOS-based devices Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.	Zeitschriftenaufsatz Journal Article
2014	Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter	Konferenzbeitrag Conference Paper
2014	Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.	Konferenzbeitrag Conference Paper
2014	Large boron-interstitial cluster modelling in BF3 plasma implanted silicon Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2014	Simultaneous simulation of systematic and stochastic process variations Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David	Konferenzbeitrag Conference Paper
2014	Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter	Konferenzbeitrag Conference Paper
2014	Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, A.J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena	Konferenzbeitrag Conference Paper
2014	Simulation for statistical variability in realistic 20nm MOSFET Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2014	Modeling platinum diffusion in silicon Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Zeitschriftenaufsatz Journal Article
2014	Challenges and opportunities for process modeling in the nanotechnology era Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2014	Variability-aware compact model strategy for 20-nm bulk MOSFETs Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen	Konferenzbeitrag Conference Paper
2014	Simulation of the boron build-up formation during melting laser thermal annealing Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2014	Deep energy levels of platinum-hydrogen complexes in silicon Badr, Elie; Pichler, Peter; Schmidt, Gerhard	Konferenzbeitrag Conference Paper
2014	Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Modeling the annealing of dislocation loops in implanted c-Si solar cells Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2014	Calculation of ohmic losses in litz wires by coupling analytical and numerical methods Roßkopf, Andreas; Joffe, Christopher; Bär, Eberhard	Konferenzbeitrag Conference Paper
2014	Thermal properties of interconnects in power MOSFETs Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian	Konferenzbeitrag Conference Paper
2014	On an improved boron segregation calibration from a particularly sensitive power MOS process Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.	Zeitschriftenaufsatz Journal Article
2013	Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015 Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2013	Melt depth and time variations during pulsed laser thermal annealing with one and more pulses Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.	Konferenzbeitrag Conference Paper
2013	Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.	Konferenzbeitrag Conference Paper
2013	Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter	Konferenzbeitrag Conference Paper
2013	Double patterning: Simulating a variability challenge for advanced transistors Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2013	Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.	Konferenzbeitrag Conference Paper
2013	On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.	Konferenzbeitrag Conference Paper
2013	On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.	Konferenzbeitrag Conference Paper
2013	Tunnel field-effect transistors with graphene channels Svintsov, D.A.; Vyurkov, V.V.; Lukichev, V.F.; Orlikovsky, A.A.; Burenkov, A.; Oechsner, R.	Zeitschriftenaufsatz Journal Article
2013	On the strain induced by arsenic into silicon Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de	Konferenzbeitrag Conference Paper
2013	Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.	Zeitschriftenaufsatz Journal Article
2013	Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen	Konferenzbeitrag Conference Paper
2013	Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.	Konferenzbeitrag Conference Paper
2013	Extended model for platinum diffusion in silicon Badr, E.; Pichler, P.; Schmidt, G.	Konferenzbeitrag Conference Paper
2013	A comprehensive model for the diffusion of boron in silicon in presence of fluorine Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter	Zeitschriftenaufsatz Journal Article
2013	On the calculation of hall factors for the characterization of electronic devices Uhnevionak, V.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2013	Anomalous impurity segregation and local bonding fluctuation in l-Si Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.	Zeitschriftenaufsatz Journal Article
2012	Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred	Patent
2012	Enthalpy based modeling of pulsed excimer laser annealing for process simulation Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.	Konferenzbeitrag Conference Paper
2012	Modeling boron profiles in silicon after pulsed excimer laser annealing Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2012	Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.	Vortrag Presentation
2012	Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2012	Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.	Poster
2012	Correlation-aware analysis of the impact of process variations on circuit behavior Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian	Vortrag Presentation
2012	BF3 PIII modeling: Implantation, amorphisation and diffusion Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.	Konferenzbeitrag Conference Paper
2012	Precipitation of antimony implanted into silicon Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2012	Angular distributions of sputtered silicon at grazing gallium ion beam incidence Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner	Zeitschriftenaufsatz Journal Article
2012	Simulation of BF3 plasma immersion ion implantation into silicon Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen	Poster
2011	Self-heating effects in nano-scaled MOSFETs and thermal aware compact models Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2011	Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.	Zeitschriftenaufsatz Journal Article
2011	On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2011	Hierarchical simulation of process variations and their impact on circuits and systems: Methodology Lorenz, J.; Bär, E.; Clees, Tanja; Jancke, R.; Salzig, C.P.J; Selberherr, S.	Zeitschriftenaufsatz Journal Article
2011	Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2011	Hierarchical simulation of process variations and their impact on circuits and systems: Results Lorenz, J.K.; Bär, E.; Clees, Tanja; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.	Zeitschriftenaufsatz Journal Article
2011	Simulation of plasma immersion ion implantation Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.	Konferenzbeitrag Conference Paper
2011	Germanium substrate loss during thermal processing Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2011	Challenges in TCAD simulations of tunneling field effect transistors Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2006 - 2010

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2010	Coupling of equipment simulation and feature-scale profile simulation for dry-etching of polysilicon gate lines Baer, E.; Kunder, D.; Evanschitzky, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Review of stress effects on dopant solubility in silicon and silicon-germanium layers Bennett, N.S.; Ahn, C.; Cowern, N.E.B.; Pichler, P.	Konferenzbeitrag Conference Paper
2010	FD SOI MOSFET compact modeling including process variations Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2010	Impact of technological options for 22 nm SOI CMOS transistors on IC performance Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Honeycomb voids due to ion implantation in germanium Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2010	Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD) Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Lithography induced layout variations in 6-T SRAM cells Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Future challenges in CMOS process modelling Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.	Zeitschriftenaufsatz Journal Article
2010	On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells Kampen, C.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2010	Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.	Zeitschriftenaufsatz Journal Article
2010	Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.	Zeitschriftenaufsatz Journal Article
2010	Coupling of Monte Carlo sputter simulation and feature-scale profile simulation and application to the simulation of back etching of an intermetal dielectric Baer, E.; Kunder, D.; Lorenz, J.; Sekowski, M.; Paschen, Uwe	Konferenzbeitrag Conference Paper
2010	2D Angular distributions of ion sputtered germanium atoms under grazing incidence Sekowski, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2009	PD-SOI MOSFETs: Interface effect on point defects and doping profiles Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2009	Impact of lithography variations on advanced CMOS devices Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.	Konferenzbeitrag Conference Paper
2009	Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2009	Simulation assessment of process options for advanced CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Comparison of different methods for simulating the effect of specular ion reflection on microtrenching during dry etching of polysilicon Kunder, D.; Baer, E.	Zeitschriftenaufsatz Journal Article
2008	A simulation study on the impact of lithographic process variations on CMOS device performance Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2008	Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Detailed arsenic concentration profiles at Si/SiO2 interfaces Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.	Zeitschriftenaufsatz Journal Article
2008	On the stability of fully depleted SOI MOSFETs under lithography process variations Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Front-end junction and contact formation in future silicon/germanium based devices. Preface Cristianoa, F.; Lauwers, A.; Pichler, P.; Feudel, T.; Windil, W.	Konferenzbeitrag Conference Paper
2008	An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.	Zeitschriftenaufsatz Journal Article
2008	Modeling and simulation of advanced annealing processes Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.	Aufsatz in Buch Book Article
2008	Advanced annealing strategies for the 32 nm node Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing Martinez-Limia, A.; Pichler, P.; Lerch, W.; Paul, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.	Zeitschriftenaufsatz Journal Article
2008	Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2008	Distribution and segregation of arsenic at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.	Zeitschriftenaufsatz Journal Article
2008	Application-driven simulation of nanoscaled CMOS transistors and circuits Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2008	Segregation of antimony to Si/SiO2 interfaces Steen, C.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2008	Process models for advanced annealing schemes and their use in device simulation Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.	Konferenzbeitrag Conference Paper
2008	On a computationally efficient approach to boron-interstitial clustering Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.	Zeitschriftenaufsatz Journal Article
2008	Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.	Konferenzbeitrag Conference Paper
2008	All-quantum simulation of an ultra-small SOI MOSFET Vyurkov, V.; Semenikhin, I.; Lukichev, V.; Burenkov, A.; Orlikovsky, A.	Konferenzbeitrag Conference Paper
2008	Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Modeling and simulation atomistic process simulation and memory modeling Sonoda, K.; Pichler, P.	Konferenzbeitrag Conference Paper
2007	Upcoming challenges for process modeling Pichler, P.	Konferenzbeitrag Conference Paper
2007	Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2007	Characterization of the pile-up of As at the SiO2/Si interface Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.	Konferenzbeitrag Conference Paper
2007	On a computationally efficient approach to Boron-interstitial clustering Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.	Konferenzbeitrag Conference Paper
2007	Experimental and theoretical results of dopant activation by a combination of spike and flash annealing Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.	Konferenzbeitrag Conference Paper
2007	Characterization of the Segregation of Arsenic at the Interface SiO2/Si Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.	Konferenzbeitrag Conference Paper
2007	Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.	Konferenzbeitrag Conference Paper
2007	Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2007	Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2006	Pattern Effects with the Mask Off Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.	Konferenzbeitrag Conference Paper
2006	Verbindungsnetzwerk zwischen Halbleiterstrukturen Burenkov, A.	Patent
2006	Diffusion and activation of dopants in silicon and advanced silicon-based materials Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.	Zeitschriftenaufsatz Journal Article
2006	A fast development simulation algorithm for discrete resist models Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Process-induced diffusion phenomena in advanced CMOS technologies Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.	Konferenzbeitrag Conference Paper
2006	Three-dimensional resist development simulation with discrete models Schnattinger, T.; Baer, E.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2006	Quantum mechanical studies of boron clustering in silicon Deák, P.; Gali, A.; Pichler, P.	Aufsatz in Buch Book Article
2006	Mesoscopic resist processing simulation in optical lithography Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Flash Annealing Technology for USJ: Modeling and Metrology Gelpey, J.; McCoy, S.; Camm, D.; Lerch, W.; Paul, S.; Pichler, P.; Borland, J.O.; Timans, P.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

2001 - 2005

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2005	Comparison of different approaches for the simulation of topography evolution during lithography development Schnattinger, T.; Bär, E.	Konferenzbeitrag Conference Paper
2005	Advanced activation of ultra-shallow junctions using flash-assisted RTP Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.	Konferenzbeitrag Conference Paper
2005	Ab initio identification of the nitrogen diffusion mechanism in silicon Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.	Zeitschriftenaufsatz Journal Article
2005	Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Effect of oxygen on the diffusion of nitrogen implanted in silicon Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.	Zeitschriftenaufsatz Journal Article
2004	Modeling of chemical-mechanical polishing on patterned wafers as part of integrated topography process simulation Nguyen, P.-H.; Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Quantum mechanical studies of boron clustering in silicon Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Intrinsic point defects, impurities, and their diffusion in silicon Pichler, P.	Buch Book
2004	Three-dimensional simulation of ionized metal plasma vapor deposition Kistler, S.; Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	3D simulation of process effects limiting FinFET performance and scalability Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2004	Polierverfahren in der Halbleiterfertigung Pfitzner, L.; Bär, E.; Frickinger, J.; Nguyen, H.; Nutsch, A.	Konferenzbeitrag Conference Paper
2004	Preface to the special issue on the EMRS 2004 Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering" Mannino, G.; Feudel, T.; Pichler, P.; Servidori, M.	Konferenzbeitrag Conference Paper
2004	3D feature-scale simulation of sputter etching with coupling to equipment simulation Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	On the modeling of transient diffusion and activation of boron during post-implantation annealing Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.	Konferenzbeitrag Conference Paper
2004	Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.	Konferenzbeitrag Conference Paper
2004	Adaptive surface triangulations for 3D process simulation Nguyen, P.-H.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2004	A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.	Zeitschriftenaufsatz Journal Article
2004	Ion sputtering at grazing incidence for SIMS-analysis Ullrich, M.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2004	Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.	Konferenzbeitrag Conference Paper
2004	Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.	Konferenzbeitrag Conference Paper
2003	Diffusion and electrical activation of indium in silicon Scalese, S.; Italia, M.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Barozzi, M.; Solmi, S.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2003	On the role of corner effect in FinFETs Lorenz, J.; Burenkov, A.	Konferenzbeitrag Conference Paper
2003	Figures of merit for CMOS switching speed Burenkov, A.; Gund, C.; Lorenz, J.	Konferenzbeitrag Conference Paper
2003	Indium in silicon: A study on diffusion and electrical activation Scalese, S.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Solmi, S.; Pichler, P.	Konferenzbeitrag Conference Paper
2003	Corner effect in double and triple gate FinFETs Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2003	Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds Pichler, P.	Konferenzbeitrag Conference Paper
2003	Transient-diffusion effects Stiebel, D.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2003	Three-dimensional triangle-based simulation of etching processes and applications Lenhart, O.; Bär, E.	Zeitschriftenaufsatz Journal Article
2003	Three-dimensional simulation of superconformal copper deposition based on the curvature-enhanced accelerator coverage mechanism Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2002	Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
2002	Properties of vacancies in silicon determined from laser-annealing experiments Pichler, P.	Konferenzbeitrag Conference Paper
2002	Simulation of the influence of via sidewall tapering on step coverage of sputter-deposited barrier layers Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2002	Determination of aluminum diffusion parameters in silicon Krause, O.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2002	Current status of models for transient phenomena in dopant diffusion and activation Pichler, P.; Stiebel, D.	Zeitschriftenaufsatz Journal Article
2002	Current understanding and modeling of boron-interstitial clusters Pichler, P.	Konferenzbeitrag Conference Paper
2002	Three-dimensional triangle-based simulation of etching processes Lenhart, O.; Bär, E.	Konferenzbeitrag Conference Paper
2001	On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets Burenkov, A.; Mu, Y.; Ryssel, H.	Konferenzbeitrag Conference Paper
2001	A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion Stiebel, D.; Pichler, P.; Cowern, N.E.B.	Zeitschriftenaufsatz Journal Article
2001	Compact modelling of process related effects on electrical behaviour of CMOS transistors Burenkov, A.; Zhou, X.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1996 - 2000

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2000	Modelling of intrinsic aluminum diffusion for future power devices Krause, O.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Phosphorus ion shower implantation for special power IC applications Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	3D simulation of the conformality of copper layers deposited by low-pressure chemical vapor deposition from cul(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2000	Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.	Zeitschriftenaufsatz Journal Article
2000	Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac) Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2000	Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation Burenkov, A.; Tietzel, K.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2000	Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.	Zeitschriftenaufsatz Journal Article
2000	Vacancy-Nitrogen Complexes in Float-Zone Silicon Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.	Konferenzbeitrag Conference Paper
2000	Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2000	A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
1999	Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	A computationally efficient method for three-dimensional simulation of ion implantation Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1999	Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering Stiebel, D.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1999	Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.	Konferenzbeitrag Conference Paper
1999	Extraction of vacancy parameters from outdiffusion of zinc from silicon Pichler, P.	Konferenzbeitrag Conference Paper
1999	Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.	Konferenzbeitrag Conference Paper
1999	Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
1999	On the influence of boron-interstitial complexes on transient enhanced diffusion Stiebel, D.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1998	On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.	Konferenzbeitrag Conference Paper
1998	Experimental verification of three-dimensional simulations of LTO layer deposition on structures prepared by anisotropic wet etching of silicon Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1998	Coupled 3D process and device simulation of advanced MOSFETs Tietzel, K.; Burenkov, A.; Lorenz, J.	Konferenzbeitrag Conference Paper
1998	Integrated three-dimensional topography simulation and its application to dual-damascene processing Bär, E.; Henke, W.; List, S.; Lorenz, J.	Konferenzbeitrag Conference Paper
1998	Dreidimensionale Simulation von Schichtabscheideprozessen in der Halbleitertechnologie Bär, E.	Dissertation Doctoral Thesis
1998	A reinterpretation of platinum-diffusion experiments Pichler, P.	Konferenzbeitrag Conference Paper
1998	Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
1998	Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1998	Three-dimensional simulation of SiO2 profiles from TEOS-sourced remote microwave plasma-enhanced chemical vapor deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1998	Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.	Zeitschriftenaufsatz Journal Article
1998	Optimization of critical ion implantation steps in 0.18 mu m CMOS technology Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1998	Recombination of point defects via extended defects and its influence Stiebel, D.; Pichler, P.	Konferenzbeitrag Conference Paper
1998	Influence of RTP on Vacancy Concentrations Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.	Aufsatz in Buch Book Article
1997	Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Vacancy-assisted oxygen precipitation phenomena in Si Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.	Zeitschriftenaufsatz Journal Article
1997	Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.	Zeitschriftenaufsatz Journal Article
1997	Distortion of SIMS profiles due to ion beam mixing Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.	Konferenzbeitrag Conference Paper
1997	Low energy implantation and transient enhanced diffusion Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.	Konferenzbeitrag Conference Paper
1997	Integrated three-dimensional topography simulation of contact hole processing Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
1997	3D simulation for sub-micron metallization Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1997	Observation of vacancy enhancement during rapid thermal annealing in nitrogen Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.	Zeitschriftenaufsatz Journal Article
1997	Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.	Konferenzbeitrag Conference Paper
1997	3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2 Bär, E.; Lorenz, J.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1997	Three-dimensional simulation of ion implantation Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	The PROMPT project and its application to the three-dimensional simulation of low-pressure chemical vapor deposition processes Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1997	Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1997	Monte-Carlo simulation of silicon amorphization during ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1997	3D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.	Aufsatz in Buch Book Article
1996	Experimental verification of three-dimensional simulations of LTO layer deposition using geometries prepared with anisotropic wet-etching of silicon with KOH Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	3-D simulation of LPCVD using segment-based topography discretization Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1996	Three-dimensional simulation of ion implantation Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	Three-dimensional simulation of low-pressure chemical vapour deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.	Aufsatz in Buch Book Article
1996	Three-dimensional simulation of layer deposition Bär, E.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1996	3D simulation of LPCVD using segment based topography discretization Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1991 - 1995

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
1995	Trajectory split method for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Zeitschriftenaufsatz Journal Article
1995	Platinum diffusion at low temperatures Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.	Konferenzbeitrag Conference Paper
1995	Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.	Zeitschriftenaufsatz Journal Article
1995	Determination of vacancy concentration in float zone and Czochralski silicon Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.	Konferenzbeitrag Conference Paper
1995	Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1995	Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1995	Three-dimensional simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.	Aufsatz in Buch Book Article
1995	On the implantation models for simulation of the FOND devices Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1995	Analytical model for phosphorus large angle tilted implantation Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1995	Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs Bauer, H.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1995	3D simulation of tungsten low-pressure chemical vapor deposition in contact holes Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
1995	Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.	Konferenzbeitrag Conference Paper
1995	3D simulation of topography and doping processes at FhG Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.	Konferenzbeitrag Conference Paper
1994	Dynamic behavior of arsenic clusters in silicon Bauer, H.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1994	Simulation of buried layer experiments containing all four dopant species Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.	Konferenzbeitrag Conference Paper
1994	On modeling of ion implantation at high temperatures Pichler, P.; Schork, R.	Zeitschriftenaufsatz Journal Article
1994	Practical aspects of ion beam analysis of semiconductor structures Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.	Zeitschriftenaufsatz Journal Article
1994	3D Simulation of Low Pressure Chemical Vapor Deposition Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
1994	Calculation of the transport matrix for the coupled diffusion of dopants and vacancies List, S.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1994	Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.	Konferenzbeitrag Conference Paper
1993	Dopant migration caused by point defect gradients Pichler, P.; List, S.	Zeitschriftenaufsatz Journal Article
1993	Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients List, S.; Pichler, P.; Ryssel, H.	Konferenzbeitrag Conference Paper
1993	Diffusion and activation of arsenic implanted at high temperature in silicon Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1992	Thermally activated dopant diffusion in crystalline silicon at 200 degree C. Pichler, P.; Orlowski, M.	Zeitschriftenaufsatz Journal Article
1992	Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1992	Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures. Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.	Zeitschriftenaufsatz Journal Article
1991	Radiation-enhanced diffusion during high-temperature ion implantation Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

1986 - 1990

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
1990	Optimization of parameters for process simulation Dürr, R.; Pichler, P.	Zeitschriftenaufsatz Journal Article
1990	Trends in practical process simulation. Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1990	Simulation of silicon semiconductor processing Pichler, P.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
1989	Programs for VLSI process simulation Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1989	One- and two-dimensional process simulation with ICECREM and COMPLAN. Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
1989	The influence of point defect concentration on the diffusion of gold in silicon Zimmermann, H.; Pichler, P.	Konferenzbeitrag Conference Paper
1989	Simulation of complete process step sequences in silicon technology Pichler, P.; Lorenz, J.	Konferenzbeitrag Conference Paper
1988	Influence of initial conditions on point defect diffusion. Impact on models Dürr, R.; Pichler, P.	Konferenzbeitrag Conference Paper

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

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