Publications Doping and Device Simulation

YearTitle/AuthorDocument Type
2019Channeling in 4H-SiC from an Application Point of View
Pichler, Peter; Sledziewski, Tomasz; Häublein, Volker; Bauer, Anton J.; Erlbacher, Tobias
Conference Paper
2019A Compact Model Based on Bardeens Transfer Hamiltonian Formalism for Silicon Single Electron Transistors
Klüpfel, Fabian J.
Journal Article
2019Diffusion of phosphorus and boron from Atomic Layer Deposition oxides into silicon
Beljakova, Svetlana; Pichler, Peter; Kalkofen, Bodo; Hübner, René
Journal Article
2019Influence of Quantum Dot Characteristics on the Performance of Hybrid SET-FET Circuits
Amat, Esteve; Klüpfel, Fabian; Bausells, Joan; Perez-Murano, Francesc
Journal Article
2019Influence of Sacrificial Layer Germanium Content on Stacked-Nanowire FET Performance
Klüpfel, Fabian J.
Journal Article
2019On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
Rattmann, Gudrun; Pichler, Peter; Erlbacher, Tobias
Journal Article
2019Post-Implantation Annealing of Platinum in Silicon
Johnsson, Anna; Pichler, Peter; Weigel, Robert
Dissertation
2019Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Journal Article
2019Simulationsgestützte Effizienzoptimierung von industriellen Kaltwassersystemen mit thermischen Speichern
Puls, Philipp; Pichler, Peter; Müller, Karsten
Dissertation
2018Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter
Conference Paper
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Juergen; Asenov, Asen; Baer, Eberhard; Barraud, Sylvain; Kluepfel, Fabian; Millar, Campbell; Nedjalkov, Mihail
Journal Article
2018Quantum dot location relevance into SET-FET circuits based on FinFET devices
Amat, Esteve; Moral, Alberto del; Bausells, Joan; Perez-Murano, Francesc; Klüpfel, Fabian
Conference Paper
20173D simulation of silicon-based single-electron transistors
Klüpfel, Fabian J.; Pichler, Peter
Conference Paper
2017Optimization of 4H-SiC photodiodes as selective UV sensors
Matthus, C.D.; Burenkov, A.; Erlbacher, T.
Conference Paper
2017Platinum diffusion for advanced silicon power devices
Badr, Elie; Pichler, Peter; Wellmann, Peter
Dissertation
2017Silicon self-interstitial properties deduced from platinum profiles after annealing with controlled cooling
Johnsson, Anna; Pichler, Peter; Schmidt, Gerhard
Journal Article
2016Empirical cluster modeling revisited
Pichler, Peter
Conference Paper
2016Gettering and defect engineering in semiconductor technology XVI: Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Pichler, Peter (Hrsg.)
Conference Proceedings
2016Ion implanted 4H-SiC UV pin-diodes for solar radiation detection - simulation and characterization
Matthus, Christian D.; Erlbacher, Tobias; Burenkov, Alexander; Bauer, Anton J.; Frey, Lothar
Conference Paper
2016Modeling the post-implantation annealing of platinum
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2016Optimization of 4H-SiC UV photodiode performance using numerical process and device simulation
Burenkov, Alex; Matthus, Christian David; Erlbacher, Tobias
Journal Article
2016A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact
Burenkov, Alex; Lorenz, Juergen
Conference Paper
2016Process informed accurate compact modelling of 14-nm FinFET variability and application to statistical 6T-SRAM simulations
Wang, Xingsheng; Reid, Dave; Wang, Liping; Millar, Campbell; Burenkov, Alex; Evanschitzky, Peter; Baer, Eberhard; Lorenz, Juergen; Asenov, Asen
Conference Paper
2016Simulating wafer bow for integrated capacitors using a multiscale approach
Wright, Alan; Krach, Florian; Thielen, Nils; Grünler, Saeideh; Erlbacher, Tobias; Pichler, Peter
Conference Paper
2016Simulation of process variations in FinFET transistor patterning
Baer, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Lorenz, Juergen
Conference Paper
2016Simulation of silicon-dot-based single-electron memory devices
Klüpfel, Fabian Johannes; Burenkov, Alexander; Lorenz, Jürgen
Conference Paper
2016Simulation of thermo-mechanical effect in bulk-silicon FinFETs
Burenkov, Alex; Lorenz, Jürgen
Journal Article
2015Comprehensive study of the electron scattering mechanisms in 4H-SiC MOSFETs
Uhnevionak, Viktoryia; Burenkov, Alexander; Strenger, Christian; Ortiz, Guillermo; Bedel-Pereira, Elena; Mortet, Vincent; Cristiano, Fuccio; Bauer, Anton J.; Pichler, Peter
Journal Article
2015Diffusion and segregation model for the annealing of silicon solar cells implanted with phosphorus
Wolf, F. Alexander; Martinez-Limia, Alberto; Grote, Daniela; Stichtenoth, Daniel; Pichler, Peter
Journal Article
2015Hierarchical variability-aware compact models of 20nm bulk CMOS
Wang, Xingsheng; Reid, D.; Wang, Liping; Burenkov, A.; Millar, C.; Lorenz, J.; Asenov, A.
Conference Paper
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Journal Article
2015Numerical evaluation of the ITRS transistor scaling
Nagy, R.; Burenkov, A.; Lorenz, J.
Journal Article
2015Role of defects in the dopant diffusion in Si
Pichler, Peter
Book Article
2015Simulation and modeling of silicon carbide devices
Uhnevionak, Viktoryia; Pichler, Peter; Weigel, Robert
Dissertation
2015Simulation of plasma immersion ion implantation into silicon
Burenkov, A.; Lorenz, J.; Spiegel, Y.; Torregrosa, F.
Conference Paper
2015Thermo-mechanical ball bonding simulation with elasto-plastic parameters obtained from nanoindentation and atomic force measurements
Wright, Alan; Koffel, Stephane; Kraft, Silke; Pichler, Peter; Cambieri, Juri; Minixhofer, Rainer; Wachmann, Ewald
Conference Paper
2014Advanced extra functionality CMOS-based devices
Cristiano, F.; Pichler, P.; Tavernier, C.; Windl, W.
Journal Article
2014Challenges and opportunities for process modeling in the nanotechnology era
Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.
Journal Article
2014Deep energy levels of platinum-hydrogen complexes in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Conference Paper
2014Hall factor calculation for the characterization of transport properties in n-channel 4H-SiC MOSFETs
Uhnevionak, U.; Burenkov, A.; Strenger, C.; Mortet, V.; Bedel-Peireira, E.; Cristiano, F.; Bauer, A.J.; Pichler, Peter
Conference Paper
2014Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by hall effect
Ortiz, Guillermo; Mortet, Vincent; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena
Conference Paper
2014Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
Essa, Z.; Cristiano, F.; Spiegel, Y.; Qiu, Y.; Boulenc, P.; Quillec, M.; Taleb, N.; Zographos, N.; Bedel-Pereira, E.; Mortet, V.; Burenkov, A.; Hackenberg, M.; Torregrosa, F.; Tavernier, C.
Journal Article
2014Modeling platinum diffusion in silicon
Badr, Elie; Pichler, Peter; Schmidt, Gerhard
Journal Article
2014Modeling the annealing of dislocation loops in implanted c-Si solar cells
Wolf, F. Alexander; Martinez-Limia, Alberto; Stichtenoth, Daniel; Pichler, Peter
Journal Article
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Journal Article
2014Relaxation of vacancy depth profiles in silicon wafers: A low apparent diffusivity of vacancy species
Voronkov, Vladimir V.; Falster, Robert; Pichler, Peter
Journal Article
2014Simulation for statistical variability in realistic 20nm MOSFET
Wang, L.; Brown, A.R.; Millar, C.; Burenkov, A.; Wang, X.; Asenov, A.; Lorenz, J.
Conference Paper
2014Simulation of AsH3 plasma immersion ion implantation into silicon
Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank
Conference Paper
2014Simulation of the boron build-up formation during melting laser thermal annealing
Hackenberg, M.; Huet, K.; Negru, R.; Fisicaro, G.; La Magna, A.; Taleb, N.; Quillec, M.; Pichler, P.
Journal Article
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Conference Paper
2014Strahlungsquelle und Verfahren zu deren Betrieb
Burenkov, Alexander
Patent
2014Systematic analysis of the high- and low-field channel mobility in lateral 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Mortet, V.; Ortiz, G.; Erlbacher, T.; Burenkov, A.; Bauer, A.J.; Cristiano, F.; Bedel-Pereira, E.; Pichler, P.; Ryssel, H.; Frey, L.
Conference Paper
2014Thermal properties of interconnects in power MOSFETs
Burenkov, Alex; Bär, Eberhard; Boianceanu, Cristian
Conference Paper
2014Thermo-mechanical simulation of plastic deformation during temperature cycling of bond wires for power electronic modules
Wright, Alan; Hutzler, Aaron; Schletz, Andreas; Pichler, Peter
Conference Paper
2014Variability-aware compact model strategy for 20-nm bulk MOSFETs
Wang, Xingsheng; Reid, Dave; Wang, Liping; Burenkov, Alex; Millar, Campbell; Cheng, Binjie; Lange, Andre; Lorenz, Jürgen; Bär, Eberhard; Asenov, Asen
Conference Paper
2013Anomalous impurity segregation and local bonding fluctuation in l-Si
Fisicaro, G.; Huet, K.; Negru, R.; Hackenberg, M.; Pichler, P.; Taleb, N.; La Magna, A.
Journal Article
2013Characterization of n-channel 4H-SiC MOSFETs: Electrical measurements and simulation analysis
Uhnevionak, Viktoryia; Strenger, Christian; Burenkov, Alexander; Mortet, Vincent; Bedel-Pereira, Elena; Lorenz, Jürgen; Pichler, Peter
Conference Paper
2013A comprehensive model for the diffusion of boron in silicon in presence of fluorine
Wolf, F. Alexander; Martinez-Limia, Alberto; Pichler, Peter
Journal Article
2013Correlation of interface characteristics to electron mobility in channel-implanted 4H-SiC MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Krieger, M.; Ryssel, H.
Conference Paper
2013Dopant dynamics and defects evolution in implanted silicon under laser irradiations: A coupled continuum and kinetic Monte Carlo approach
Fisicaro, G.; Pelaz, L.; Aboy, M.; Lopez, P.; Italia, M.; Huet, K.; Cristiano, F.; Essa, Z.; Yang, Q.; Bedel-Pereira, E.; Hackenberg, M.; Pichler, P.; Quillec, M.; Taleb, N.; La Magna, A.
Conference Paper
2013Double patterning: Simulating a variability challenge for advanced transistors
Evanschitzky, Peter; Burenkov, Alex; Lorenz, Jürgen
Conference Paper
2013Extended model for platinum diffusion in silicon
Badr, E.; Pichler, P.; Schmidt, G.
Conference Paper
2013Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
Mortet, V.; Bedel-Pereira, E.; Bobo, J.F.; Cristiano, F.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.
Conference Paper
2013Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
Strenger, C.; Uhnevionak, V.; Burenkov, A.; Bauer, A.J.; Pichler, P.; Erlbacher, T.; Ryssel, H.; Frey, L.
Conference Paper
2013Influence of La on the electrical properties of HfSiON: From diffusion to Vth shifts
Hackenberg, M.; Pichler, P.; Baudot, S.; Essa, Z.; Gro-Jean, M.; Tavernier, C.; Schamm-Chardon, S.
Journal Article
2013Melt depth and time variations during pulsed laser thermal annealing with one and more pulses
Hackenberg, Moritz; Rommel, Mathias; Rumler, M; Lorenz, Jürgen; Pichler, Peter; Huet, Karim; Negru, Razvan; Fisicaro, Giuseppe; Magna, Antonino la; Taleb, Nadjib; Quillec, M.
Conference Paper
2013On the calculation of hall factors for the characterization of electronic devices
Uhnevionak, V.; Burenkov, A.; Pichler, P.
Conference Paper
2013On the strain induced by arsenic into silicon
Koffel, Stéphane; Pichler, Peter; Lorenz, Jürgen; Bisognin, Gabriele; Napolitani, Enrico; Salvador, Davide de
Conference Paper
2013On the temperature dependence of the hall factor in n-channel 4H-SiC MOSFETs
Uhnevionak, V.; Burenkov, A.; Strenger, C.; Bauer, A.J.; Pichler, P.
Conference Paper
2013On the thermo-mechanical modelling of a ball bonding process with ultrasonic softening
Wright, A.; Koffel, S.; Pichler, P.; Enichlmair, H.; Minixhofer, R.; Wachmann, E.
Conference Paper
2013Self-Heating Effects in Nano-Scaled MOSFETs and Thermal-Aware Compact Models for the SOI CMOS Generation of 2015
Burenkov, Alex; Lorenz, Jürgen
Conference Paper
2013Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen
Conference Paper
2013Tunnel field-effect transistors with graphene channels
Svintsov, D.A.; Vyurkov, V.V.; Lukichev, V.F.; Orlikovsky, A.A.; Burenkov, A.; Oechsner, R.
Journal Article
2013Verification of near-interface traps models by electrical measurements on 4H-SiC n-channel MOSFETs
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Conference Paper
2012Angular distributions of sputtered silicon at grazing gallium ion beam incidence
Burenkov, Alex; Sekowski, Matthias; Belko, Viktor; Ryssel, Heiner
Journal Article
2012BF3 PIII modeling: Implantation, amorphisation and diffusion
Essa, Z.; Cristiano, F.; Spiegel, Y.; Boulenc, P.; Qiu, Y.; Quillec, M.; Taleb, N.; Burenkov, A.; Hackenberg, M.; Bedel-Pereira, E.; Mortet, V.; Torregrosa, F.; Tavernier, C.
Conference Paper
2012Correlation-aware analysis of the impact of process variations on circuit behavior: Presentation held at SISPAD 2012, International Conference on Simulation of Semiconductor Processes and Devices, September 5-7, 2012; Denver, Colorado
Burenkov, Alex; Baer, Eberhard; Lorenz, Juergen; Kampen, Christian
Conference Paper
2012Enthalpy based modeling of pulsed excimer laser annealing for process simulation
Hackenberg, M.; Pichler, P.; Huet, K.; Negru, R.; Venturini, J.; Pakfar, A.; Tavernier, C.; La Magna, A.
Conference Paper
2012Hall effect characterizations of 4H-SiC MOSFETs: Influence of nitrogen channel implantation: Poster at European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
Mortet, V.; Bedel-Pereira, E.; Bobo, J.; Strenger, C.; Uhnevionak, V.; Burenkov, A.; Cristiano, F.; Bauer, A.
Poster
2012Modeling boron profiles in silicon after pulsed excimer laser annealing
Hackenberg, M.; Huet, K.; Negru, R.; Venturini, J.; Fisicaro, G.; La Magna, A.; Pichler, P.
Conference Paper
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Journal Article
2012Simulation of BF3 plasma immersion ion implantation into silicon
Burenkov, A.; Hahn, A.; Spiegel, Y.; Etienne, H.; Torregrosa, F.
Conference Paper
2012Verfahren zur gezielten Einstellung einer Tropfenkondensation auf einer Oberfläche eines Substrats mittels Ionenimplantation
Burenkov, Alexander; Pichler, Peter; Fröba, Andreas; Rausch, Michael Heinrich; Leipertz, Alfred
Patent
2012Verification of near-interface traps by electrical measurements on 4H-SiC n-channel MOSFETs: Presentation held at the European Conference on Silicon Carbide and Related Materials, ECSCRM 2012, September 2 - 6, 2012, Saint Petersburg
Uhnevionak, V.; Strenger, C.; Burenkov, A.; Mortet, V.; Bedel-Pereira, E.; Cristiano, F.; Bauer, A.; Pichler, P.
Presentation
2011Challenges in TCAD simulations of tunneling field effect transistors
Kampen, Christian; Burenkov, Alex; Lorenz, Jürgen
Conference Paper
2011Defects formed by pulsed laser annealing: Electrical properties and depth profiles in n-type silicon measured by deep level transient spectroscopy
Schindele, D.; Pichler, P.; Lorenz, J.; Oesterlin, P.; Ryssel, H.
Journal Article
2011Experiments and simulation of the diffusion and activation of the n-Type dopants P, As, and Sb implanted into germanium
Koffel, S.; Kaiser, R.J.; Bauer, A.J.; Amon, B.; Pichler, P.; Lorenz, J.; Frey, L.; Scheiblin, P.; Mazzocchi, V.; Barnes, J.-P.; Claverie, A.
Journal Article
2011Germanium substrate loss during thermal processing
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Frey, L.; Ryssel, H.
Journal Article
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Journal Article
2011Self-heating effects in nano-scaled MOSFETs and thermal aware compact models
Burenkov, A.; Lorenz, J.
Conference Paper
2011Simulation of plasma immersion ion implantation
Burenkov, A.; Pichler, P.; Lorenz, J.; Spiegel, Y.; Duchaine, J.; Torregrosa, F.
Conference Paper
20102D Angular distributions of ion sputtered germanium atoms under grazing incidence
Sekowski, M.; Burenkov, A.; Ryssel, H.
Conference Paper
2010Characterization of arsenic segregation at Si/SiO2 interface by 3D atom probe tomography
Ngamo, M.; Duguay, S.; Pichler, P.; Daoud, K.; Pareige, P.
Journal Article
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Conference Paper
2010FD SOI MOSFET compact modeling including process variations
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2010Future challenges in CMOS process modelling
Pichler, P.; Burenkov, A.; Lorenz, J.; Kampen, C.; Frey, L.
Journal Article
2010Honeycomb voids due to ion implantation in germanium
Kaiser, R.J.; Koffel, S.; Pichler, P.; Bauer, A.J.; Amon, B.; Claverie, A.; Benassayag, G.; Scheiblin, P.; Frey, L.; Ryssel, H.
Journal Article
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Conference Paper
2010Lithography induced layout variations in 6-T SRAM cells
Kampen, C.; Evanschitzky, P.; Burenkov, A.; Lorenz, J.
Conference Paper
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Conference Paper
2010Review of stress effects on dopant solubility in silicon and silicon-germanium layers
Bennett, N.S.; Ahn, C.; Cowern, N.E.B.; Pichler, P.
Conference Paper
2010Simulation of focused ion beam etching by coupling a topography simulator and a Monte-Carlo sputtering yield simulator
Kunder, D.; Baer, E.; Sekowski, M.; Pichler, P.; Rommel, M.
Journal Article
2009Comparison between 65nm bulk and PD-SOI MOSFETs. Si/BOX interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009Impact of lithography variations on advanced CMOS devices
Lorenz, J.; Kampen, C.; Burenkov, A.; Fühner, T.
Conference Paper
2009PD-SOI MOSFETs: Interface effect on point defects and doping profiles
Bazizi, E.M.; Pakfar, A.; Fazzini, P.F.; Cristiano, F.; Tavernier, C.; Claverie, A.; Burenkov, A.; Pichler, P.
Conference Paper
2009Simulation assessment of process options for advanced CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Advanced activation trends for boron and arsenic by combinations of single, multiple flash anneals and spike rapid thermal annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.; Martinez-Limia, A.; Pichler, P.; Kheyrandish, H.; Bolze, D.
Conference Paper
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008All-quantum simulation of an ultra-small SOI MOSFET
Vyurkov, V.; Semenikhin, I.; Lukichev, V.; Burenkov, A.; Orlikovsky, A.
Conference Paper
2008Alternative source/drain contact-pad architectures for contact resistance improvement in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Angular distributions of sputtered atoms from semiconductor targets at grazing ion beam incidence angles
Sekowski, M.; Burenkov, A.; Hernández-Mangas, J.; Martinez-Limia, A.; Ryssel, H.
Conference Paper
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Journal Article
2008Application-driven simulation of nanoscaled CMOS transistors and circuits
Burenkov, A.; Kampen, C.; Baer, E.; Lorenz, J.; Ryssel, H.
Journal Article
2008Detailed arsenic concentration profiles at Si/SiO2 interfaces
Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.
Journal Article
2008Distribution and segregation of arsenic at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Paul, S.; Lerch, W.; Pei, L.; Duscher, G.; Severac, F.; Cristiano, F.; Windl, W.
Journal Article
2008Experimental investigations and simulation of the deactivation of arsenic during thermal processes after activation by SPER and spike annealing
Martinez-Limia, A.; Pichler, P.; Lerch, W.; Paul, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.
Journal Article
2008Front-end junction and contact formation in future silicon/germanium based devices. Preface
Cristianoa, F.; Lauwers, A.; Pichler, P.; Feudel, T.; Windil, W.
Conference Paper
2008Modeling and simulation atomistic process simulation and memory modeling
Sonoda, K.; Pichler, P.
Journal Article
2008Modeling and simulation of advanced annealing processes
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Book Article
2008Modeling of the diffusion and activation of arsenic in silicon including clustering and precipitation
Martinez-Limia, A.; Pichler, P.; Steen, C.; Paul, S.; Lerch, W.
Conference Paper
2008On a computationally efficient approach to boron-interstitial clustering
Schermer, J.; Martinez-Limia, A.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Journal Article
2008On the stability of fully depleted SOI MOSFETs under lithography process variations
Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Pre-silicon SPICE modeling of nano-scaled SOI MOSFETs
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Conference Paper
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Conference Paper
2008Segregation of antimony to Si/SiO2 interfaces
Steen, C.; Pichler, P.; Ryssel, H.
Journal Article
2008A simulation study on the impact of lithographic process variations on CMOS device performance
Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.
Conference Paper
2008Total reflection x-ray fluorescence as a sensitive analysis method for the investigation of sputtering processes
Sekowski, M.; Steen, C.; Nutsch, A.; Birnbaum, E.; Burenkov, A.; Pichler, P.
Conference Paper
2007Advanced activation and deactivation of arsenic-implanted ultra-shallow junctions using flash and spike + flash annealing
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Gelpey, J.; Bolze, D.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Martinez, A.; Pichler, P.
Conference Paper
2007Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon
Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.
Journal Article
2007Characterization of the pile-up of As at the SiO2/Si interface
Steen, C.; Martinez-Limia, A.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Windl, W.
Conference Paper
2007Characterization of the Segregation of Arsenic at the Interface SiO2/Si
Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.
Conference Paper
2007Diffusion and deactivation of As in Si: Combining atomistic and continuum simulation approaches
Martinez-Limia, A.; Steen, C.; Pichler, P.; Gupta, N.; Windl, W.; Paul, S.; Lerch, W.
Conference Paper
2007Experimental and theoretical results of dopant activation by a combination of spike and flash annealing
Lerch, W.; Paul, S.; Niess, J.; Chan, J.; McCoy, S.; Gelpey, J.; Cristiano, F.; Severac, F.; Fazzini, P.F.; Bolze, D.; Pichler, P.; Martinez, A.; Mineji, A.; Shishiguchi, S.
Conference Paper
2007On a computationally efficient approach to Boron-interstitial clustering
Schermer, J.; Pichler, P.; Zechner, C.; Lerch, W.; Paul, S.
Conference Paper
2007Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths
Burenkov, A.; Kampen, C.; Lorenz, J.; Ryssel, H.
Abstract
2007Upcoming challenges for process modeling
Pichler, P.
Conference Paper
2006Diffusion and activation of dopants in silicon and advanced silicon-based materials
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Uppal, S.; Karunaratne, M.S.A.; Bonar, J.M.; Willoughby, A.F.W.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Journal Article
2006Flash Annealing Technology for USJ: Modeling and Metrology
Gelpey, J.; McCoy, S.; Camm, D.; Lerch, W.; Paul, S.; Pichler, P.; Borland, J.O.; Timans, P.
Conference Paper
2006Pattern Effects with the Mask Off
Nenyei, Z.; Niess, J.; Lerch, W.; Dietl, W.; Timans, P.J.; Pichler, P.
Conference Paper
2006Process-induced diffusion phenomena in advanced CMOS technologies
Pichler, P.; Burenkov, A.; Lerch, W.; Lorenz, J.; Paul, S.; Niess, J.; Nényei, Z.; Gelpey, J.; McCoy, S.; Windl, W.; Giles, L.F.
Conference Paper
2006Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.
Book Article
2006Verbindungsnetzwerk zwischen Halbleiterstrukturen
Burenkov, A.
Patent
2005Ab initio identification of the nitrogen diffusion mechanism in silicon
Stoddard, N.; Pichler, P.; Duscher, G.; Windl, W.
Journal Article
2005Advanced activation of ultra-shallow junctions using flash-assisted RTP
Lerch, W.; Paul, S.; Niess, J.; McCoy, S.; Selinger, T.; Gelpey, J.; Cristiano, F.; Severac, F.; Gavelle, M.; Boninelli, S.; Pichler, P.; Bolze, D.
Conference Paper
2005Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Conference Paper
20043D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J.
Conference Paper
2004Adaptive surface triangulations for 3D process simulation
Nguyen, P.-H.; Burenkov, A.; Lorenz, J.
Conference Paper
2004Boron-interstitial cluster kinetics: Extraction of binding energies from dedicated experiments
Ortiz, C.J.; Pichler, P.; Haublein, V.; Mannino, G.; Scalese, S.; Privitera, V.; Solmi, S.; Lerch, W.
Conference Paper
2004Current understanding and modeling of B diffusion and activation anomalies in preamorphized ultra-shallow junctions
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Pawlak, B.J.; Cristiano, F.; Duffy, R.; Claverie, A.; Ortiz, C.J.; Pichler, P.; Lampin, E.; Zechner, C.
Conference Paper
2004Effect of oxygen on the diffusion of nitrogen implanted in silicon
Mannino, G.; Privitera, V.; Scalese, S.; Libertino, S.; Napolitani, E.; Pichler, P.; Cowern, N.E.B.
Journal Article
2004Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: Interstitial transport and F co-implant control
Colombeau, B.; Smith, A.J.; Cowern, N.E.B.; Lerch, W.; Paul, S.; Pawlak, B.J.; Cristiano, F.; Hebras, X.; Bolze, D.; Ortiz, C.; Pichler, P.
Conference Paper
2004Intrinsic point defects, impurities, and their diffusion in silicon
Pichler, P.
Book
2004Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Conference Paper
2004On the modeling of transient diffusion and activation of boron during post-implantation annealing
Pichler, P.; Ortiz, C.J.; Colombeau, B.; Cowern, N.E.B.; Lampin, E.; Claverie, A.; Cristiano, F.; Lerch, W.; Paul, S.
Conference Paper
2004A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
Ortiz, C.J.; Pichler, P.; Fühner, T.; Cristiano, F.; Colombeau, B.; Cowern, N.E.B.; Claverie, A.
Journal Article
2004Preface to the special issue on the EMRS 2004 Symposium B on "Material Science Issues in Advanced CMOS Source-drain Engineering"
Mannino, G.; Feudel, T.; Pichler, P.; Servidori, M.
Conference Paper
2004Quantum mechanical studies of boron clustering in silicon
Deák, P.; Gali, A.; Pichler, P.; Ryssel, H.
Conference Paper
2004Silicon Front-End Junction Formation - Physics and Technology: Symposium held April 13 - 15, 2004, San Francisco, California, U.S.A. ; Symposium C, held at the 2004 MRS spring meeting
Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W.
Conference Proceedings
2003Corner effect in double and triple gate FinFETs
Burenkov, A.; Lorenz, J.
Conference Paper
2003Diffusion and electrical activation of indium in silicon
Scalese, S.; Italia, M.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Barozzi, M.; Solmi, S.; Pichler, P.
Journal Article
2003Figures of merit for CMOS switching speed
Burenkov, A.; Gund, C.; Lorenz, J.
Conference Paper
2003Indium in silicon: A study on diffusion and electrical activation
Scalese, S.; La Magna, A.; Mannino, G.; Privitera, V.; Bersani, M.; Giubertoni, D.; Solmi, S.; Pichler, P.
Conference Paper
2003Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds
Pichler, P.
Conference Paper
2003On the role of corner effect in FinFETs
Lorenz, J.; Burenkov, A.
Conference Paper
2003Transient-diffusion effects
Stiebel, D.; Pichler, P.
Journal Article
2002Current status of models for transient phenomena in dopant diffusion and activation
Pichler, P.; Stiebel, D.
Journal Article
2002Current understanding and modeling of boron-interstitial clusters
Pichler, P.
Conference Paper
2002Determination of aluminum diffusion parameters in silicon
Krause, O.; Pichler, P.; Ryssel, H.
Journal Article
2002Properties of vacancies in silicon determined from laser-annealing experiments
Pichler, P.
Conference Paper
2002Three-dimensional simulation of the channel stop implant effects in sub-quarter micron PMOS transistors
Burenkov, A.; Lorenz, J.
Conference Paper
2001Compact modelling of process related effects on electrical behaviour of CMOS transistors
Burenkov, A.; Zhou, X.
Conference Paper
2001On the effect of local electronic stopping on ion implantation profiles in non-crystalline targets
Burenkov, A.; Mu, Y.; Ryssel, H.
Conference Paper
2001A reduced approach for modeling the influence of nanoclusters and {113}-defects on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Cowern, N.E.B.
Journal Article
2000Charge state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.; Burenkov, A.; Ryssel, H.; Xia, Y.; Mei, L.
Journal Article
2000Charge-state dependence of stopping power for light ions penetrating thin carbon foils at low velocity
Mu, Y.G.; Burenkov, A.; Ryssel, H.; Xia, Y.Y.; Mei, L.M.
Journal Article
2000A Computationally Efficient Method for Three-Dimensional Simulation of Ion Implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
2000Modeling the Amorphization of Si due to the Implantation of As, Ge, and Si
Stiebel, D.; Burenkov, A.; Pichler, P.; Cristiano, F.; Claverie, A.; Ryssel, H.
Conference Paper
2000Modelling of intrinsic aluminum diffusion for future power devices
Krause, O.; Pichler, P.; Ryssel, H.
Conference Paper
2000Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J.
Journal Article
2000Phosphorus ion shower implantation for special power IC applications
Kröner, F.; Schork, R.; Frey, L.; Burenkov, A.; Ryssel, H.
Conference Paper
2000Vacancy-Nitrogen Complexes in Float-Zone Silicon
Quast, F.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
1999A computationally efficient method for three-dimensional simulation of ion implantation
Burenkov, A.; Tietzel, K.; Hössinger, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1999Extraction of vacancy parameters from outdiffusion of zinc from silicon
Pichler, P.
Conference Paper
1999Investigation of the Suppression of the Narrow Channel Effect in Deep Sub-Micron EXTIGATE Transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Conference Paper
1999Investigation of the supression of the narrow channel effect in deep submicron EXTIGATE transistors
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.; Schwalke, U.
Conference Paper
1999Modeling of transient enhanced dopant diffusion by using a moment-based model describing point-defect clustering
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1999On the influence of boron-interstitial complexes on transient enhanced diffusion
Stiebel, D.; Pichler, P.; Ryssel, H.
Conference Paper
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1998Coupled 3D process and device simulation of advanced MOSFETs
Tietzel, K.; Burenkov, A.; Lorenz, J.
Conference Paper
1998Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon
Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.
Journal Article
1998Influence of RTP on Vacancy Concentrations
Jacob, M.; Pichler, P.; Wohs, M.; Ryssel, H.; Falster, R.
Book Article
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1998On the Asymmetrical Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers
Alquier, D.; Cowern, N.E.B.; Pichler, P.; Armand, C.; Martinez, A.; Mathiot, D.; Omri, M.; Claverie, A.
Conference Paper
1998Optimization of critical ion implantation steps in 0.18 mu m CMOS technology
Burenkov, A.; Wittl, J.; Schwalke, U.; Lorenz, J.; Ryssel, H.
Conference Paper
1998Recombination of point defects via extended defects and its influence
Stiebel, D.; Pichler, P.
Conference Paper
1998A reinterpretation of platinum-diffusion experiments
Pichler, P.
Conference Paper
1997Comparison of HDD and pocket architecture for 0.18 mu m N-MOSFETs
Burenkov, A.; Tietzel, K.; Lorenz, J.; Ryssel, H.
Conference Paper
1997Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Journal Article
1997Distortion of SIMS profiles due to ion beam mixing
Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.
Conference Paper
1997Low energy implantation and transient enhanced diffusion: Physical mechanisms and technology implications
Cowern, N.E.B.; Collart, E.J.H.; Politiek, J.; Bancken, P.H.L.; Berkum, J.G.M. van; Kyllesbech Larsen, K.; Stolk, P.A.; Huizing, H.G.A.; Pichler, P.; Burenkov, A.; Gravensteijn, D.J.
Conference Paper
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1997Observation of vacancy enhancement during rapid thermal annealing in nitrogen
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.; Cornara, M.; Gambaro, D.; Olmo, M.; Pagani, M.
Journal Article
1997Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology
Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.
Conference Paper
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Conference Paper
1997Vacancy-assisted oxygen precipitation phenomena in Si
Falster, R.; Pagani, M.; Gambaro, D.; Cornara, M.; Olmo, M.; Ferrero, G.; Pichler, P.; Jacob, M.
Journal Article
1996Fortschrittliche Prozeßmodelle für 0,25 µm CMOS Technologien
Lorenz, J.; Bauer, H.; Burenkov, A.; List, S.; Pichler, P.
Book Article
1996Mehrdimensionale Simulation halbleitertechnologischer Fertigungsschritte
Lorenz, J.; Bär, E.; Burenkov, A.; Tietzel, K.
Book Article
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Conference Paper
19953D simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Conference Paper
19956th International Conference on Simulation of Semiconductor Devices and Processes. SISDEP '95. Proceedings
Ryssel, H.; Pichler, P.
Conference Proceedings
1995Analytical model for phosphorus large angle tilted implantation
Burenkov, A.; Bohmayr, W.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1995Anatomistic evaluation of diffusion theories for the dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Atomistic evalution of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1995Determination of vacancy concentration in float zone and Czochralski silicon
Jacob, M.; Pichler, P.; Ryssel, H.; Gambaro, D.; Falster, R.
Conference Paper
1995Modeling dynamic clustering of arsenic including non-neglible concentration of arsenic-point defect pairs
Bauer, H.; Pichler, P.; Ryssel, H.
Journal Article
1995On the implantation models for simulation of the FOND devices
Burenkov, A.; List, S.; Lorenz, J.; Ryssel, H.
Conference Paper
1995Phosphourus-enhanced diffusion of antimony due to generation of self-interstitials
Pichler, P.; Ryssel, H.; Ploß, R.; Bonafos, C.; Claverie, A.
Journal Article
1995Platinum diffusion at low temperatures
Jacob, M.; Pichler, P.; Ryssel, H.; Falster, R.
Conference Paper
1995Statistical accuracy and CPU-time characteristic of three trajectory split methods for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Conference Paper
1995Three-dimensional simulation of topography and doping processes at FhG
Lorenz, J.; Bär, E.; Burenkov, A.; Henke, W.; Tietzel, K.; Weiß, M.
Book Article
1995Trajectory split method for Monte-Carlo simulation of ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Journal Article
1994Calculation of the transport matrix for the coupled diffusion of dopants and vacancies
List, S.; Pichler, P.; Ryssel, H.
Journal Article
1994Dynamic behavior of arsenic clusters in silicon
Bauer, H.; Pichler, P.; Ryssel, H.
Conference Paper
1994Enhanced diffusion of antimony caused by phosphorus diffusion at high concentrations
Pichler, P.; Ryssel, H.; Wallmann, G.; Ploß, R.
Conference Paper
1994On modeling of ion implantation at high temperatures
Pichler, P.; Schork, R.
Journal Article
1994Practical aspects of ion beam analysis of semiconductor structures
Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L.
Journal Article
1994Simulation of buried layer experiments containing all four dopant species
Ghaderi, K.; Hobler, G.; Budil, M.; Pötzl, H.; Pichler, P.; Ryssel, H.; Hansch, W.; Eisele, I.; Tian, C.; Stingeder, G.
Conference Paper
1993Atomistic evaluation of diffusion theories for the diffusion of dopants in vacancy gradients
List, S.; Pichler, P.; Ryssel, H.
Conference Paper
1993Diffusion and activation of arsenic implanted at high temperature in silicon
Yu, Y.H.; Schork, R.; Pichler, P.; Ryssel, H.
Journal Article
1993Dopant migration caused by point defect gradients
Pichler, P.; List, S.
Conference Paper
1992Direct experimental evidence for diffusion of dopants via pairs with intrinsic point defects
Pichler, P.; Schork, R.; Klauser, T.; Ryssel, H.
Journal Article
1992Evaluation of the point defect bulk recombination rate by ion implantation at high temperatures.
Klauser, T.; Pichler, P.; Ryssel, H.; Schork, R.
Journal Article
1992Thermally activated dopant diffusion in crystalline silicon at 200 degree C.
Pichler, P.; Orlowski, M.
Journal Article
1991Radiation-enhanced diffusion during high-temperature ion implantation
Schork, R.; Kluge, A.; Pichler, P.; Ryssel, H.
Journal Article
1990Optimization of parameters for process simulation
Dürr, R.; Pichler, P.
Journal Article
1990Simulation of silicon semiconductor processing
Pichler, P.; Ryssel, H.
Journal Article
1990Trends in practical process simulation.
Pichler, P.; Ryssel, H.
Journal Article
1989The influence of point defect concentration on the diffusion of gold in silicon
Zimmermann, H.; Pichler, P.
Conference Paper
1989One- and two-dimensional process simulation with ICECREM and COMPLAN.
Pichler, P.; Dürr, R.; Holzer, N.; Schott, K.; Barthel, A.; Lorenz, J.; Ryssel, H.
Conference Paper
1989Programs for VLSI process simulation
Pichler, P.; Lorenz, J.; Pelka, J.; Ryssel, H.
Conference Paper
1989Simulation of complete process step sequences in silicon technology
Pichler, P.; Lorenz, J.
Conference Paper
1988Influence of initial conditions on point defect diffusion. Impact on models
Dürr, R.; Pichler, P.
Conference Paper
This publication list has been generated from the publication database Fraunhofer-Publica.