Publications Computational Lithography and Optics

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2023	3D Mask Simulation and Lithographic Imaging using Physics-Informed Neural Networks Medvedev, Vlad; Erdmann, Andreas; Roßkopf, Andreas	Meeting Abstract
2022	Attenuated phase shift masks: A wild card resolution enhancement for extreme ultraviolet lithography? Erdmann, Andreas; Mesilhy, Hazem; Evanschitzky, Peter	Zeitschriftenaufsatz Journal Article
2022	3D mask defect and repair simulation based on SEM images Medvedev, Vladimir; Evanschitzky, Peter; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2021	Mask defect detection with hybrid deep learning network Evanschitzky, P.; Auth, N.; Heil, T.; Hermanns, C.F.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2021	Simulation study on EUV multilayer polarization effects Bilalaj, L.; Mesilhy, H.; Erdmann, A.	Konferenzbeitrag Conference Paper
2021	Stochastic simulation and calibration of organometallic photoresists for extreme ultraviolet lithography Belete, Z.; Bisschop, P. de; Welling, U.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2021	Simulation of polychromatic effects in high NA EUV lithography Erdmann, A.; Mesilhy, H.; Evanschitzky, P.; Saadeh, Q.; Soltwisch, V.; Bihr, S.; Zimmermann, J.; Philipsen, V.	Konferenzbeitrag Conference Paper
2021	Investigation of waveguide modes in EUV mask absorbers Mesilhy, H.; Evanschitzky, P.; Bottiglieri, G.; Lare, C. Van; Setten, E. Van; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2021	Modeling the impact of shrinkage effects on photoresist development D'Silva, S.; Mülders, T.; Stock, H.-J.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2021	Study of novel EUVL mask absorber candidates Wu, M.; Thakare, D.; Marneffe, J.-F. de; Jaenen, P.; Souriau, L.; Opsomer, K.; Soulié, J.-P.; Erdmann, A.; Mesilhy, H.; Naujok, P.; Foltin, M.; Soltwisch, V.; Saadeh, Q.; Philipsen, V.	Zeitschriftenaufsatz Journal Article
2021	Accurate prediction of EUV lithographic images and 3D mask effects using generative networks Awad, A.; Brendel, P.; Evanschitzky, P.; Woldeamanual, D.S.; Rosskopf, A.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2020	Perspectives and tradeoffs of absorber materials for high NA EUV lithography Erdmann, A.; Mesilhy, H.; Evanschitzky, P.; Philipsen, V.; Timmermans, F.; Bauer, M.	Zeitschriftenaufsatz Journal Article
2020	Mask absorber for next generation EUV lithography Wu, M.; Thakare, D.; Marneffe, J.-F. de; Jaenen, P.; Souriau, L.; Opsomer, K.; Soulié, J.-P.; Erdmann, A.; Mesilhy, H.; Naujok, P.; Foltin, M.; Soltwisch, V.; Saadeh, Q.; Philipsen, V.	Konferenzbeitrag Conference Paper
2020	Pathfinding the perfect EUV mask: The role of the multilayer Mesilhy, H.; Evanschitzky, P.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2019	Lithographic effects due to particles on high-NA EUV mask pellicle Devaraj, L.; Bottiglieri, G.; Erdmann, A.; Wählisch, F.; Kupers, M.; Setten, E. van; Fliervoet, T.	Konferenzbeitrag Conference Paper
2019	Mask absorber development to enable next-generation EUVL Philipsen, V.; Luong, K.V.; Opsomer, K.; Souriau, L.; Rip, J.; Detavernier, C.; Erdmann, A.; Evanschitzky, P.; Laubis, C.; Honicke, P.; Soltwisch, V.; Hendrickx, E.	Konferenzbeitrag Conference Paper
2019	Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects? Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.	Zeitschriftenaufsatz Journal Article
2019	3D mask effects in high NA EUV imaging Erdmann, A.; Evanschitzky, P.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.	Konferenzbeitrag Conference Paper
2019	Learned sensing: Jointly optimized microscope hardware for accurate image classification Muthumbi, A.; Chaware, A.; Kim, K.; Zhou, K.C.; Konda, P.C.; Chen, R.; Judkewitz, B.; Erdmann, A.; Kappes, B.; Horstmeyer, R.	Zeitschriftenaufsatz Journal Article
2018	Fourier ptychography for lithography high NA systems Dejkameh, A.; Erdmann, A.; Evanschitzky, P.; Ekinci, Y.	Konferenzbeitrag Conference Paper
2018	Simulation study of illumination effects in high-NA EUV lithography Ismail, M.; Evanschitzky, P.; Erdmann, A.; Bottiglieri, G.; Setten, E. van; Fliervoet, T.F.	Konferenzbeitrag Conference Paper
2018	Application of deep learning algorithms for Lithographic mask characterization Woldeamanual, D.S.; Erdmann, A.; Maier, A.	Konferenzbeitrag Conference Paper
2018	Modeling of block copolymer dry etching for directed self-assembly lithography Belete, Zelalem; Bär, Eberhard; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2018	Accurate determination of 3D PSF and resist effects in grayscale laser lithography Onanuga, T.; Kaspar, C.; Sailer, H.; Erdmann, A.	Konferenzbeitrag Conference Paper
2018	Novel EUV mask absorber evaluation in support of next-generation EUV imaging Philipsen, V.; Luong, K.V.; Opsomer, K.; Detavernier, C.; Hendrickx, E.; Erdmann, A.; Evanschitzky, P.; Kruijs, R.W.E. van de; Heidarnia-Fathabad, Z.; Scholze, F.; Laubis, C.	Konferenzbeitrag Conference Paper
2018	Attenuated PSM for EUV Erdmann, A.; Evanschitzky, P.; Mesilhy, H.; Philipsen, V.; Hendrickx, E.; Bauer, M.	Konferenzbeitrag Conference Paper
2017	Special issue on ptychography Erdmann, A.; Situ, G.	Zeitschriftenaufsatz Journal Article
2017	Characterization and mitigation of 3D mask effects in extreme ultraviolet lithography Erdmann, A.; Xu, D.; Evanschitzky, P.; Philipsen, V.; Luong, V.; Hendrickx, E.	Zeitschriftenaufsatz Journal Article
2017	Simulation flow and model verification for laser direct-write lithography Onanuga, T.; Rumler, M.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2017	Levet-set-based inverse lithography under random field shape uncertainty in a vector Hopkins imaging model Wu, X.; Fühner, T.; Erdmann, A.; Lam, E.Y.	Konferenzbeitrag Conference Paper
2017	A physical model for innovative laser direct write lithography Onanuga, T.; Rumler, M.; Erdmann, A.	Konferenzbeitrag Conference Paper
2017	Efficient simulation of EUV pellicles Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2017	Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers Philipsen, V.; Luong, K.V.; Souriau, L.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.; Hendrickx, E.	Zeitschriftenaufsatz Journal Article
2017	Reducing EUV mask 3D effects by alternative metal absorbers Philipsen, V.; Luong, K.V.; Souriau, L.; Hendrickx, E.; Erdmann, A.; Xu, D.; Evanschitzky, P.; Kruijs, R.W.E. van de; Edrisi, A.; Scholze, F.; Laubis, C.; Irmscher, M.; Naasz, S.; Reuter, C.	Konferenzbeitrag Conference Paper
2016	Resolution enhancements for semiconductor lithography: A computational perspective Erdmann, A.	Konferenzbeitrag Conference Paper
2016	Extreme ultraviolet multilayer defect analysis and geometry reconstruction Xu, D.; Evanschitzky, P.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2016	Mask-induced best-focus shifts in deep ultraviolet and extreme ultraviolet lithography Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.	Zeitschriftenaufsatz Journal Article
2016	3D simulation of light exposure and resist effects in laser direct write lithography Onanuga, Temitope; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2016	Incorporating photomask shape uncertainty in computational lithography Wu, X.; Liu, S.; Erdmann, A.; Lam, E.Y.	Konferenzbeitrag Conference Paper
2016	Challenges for predictive EUV mask modeling Evanschitzky, Peter; Erdmann, Andreas	Vortrag Presentation
2016	Extending VLSI and alternative technology with optical and complementary lithography Lai, K.; Erdmann, A.	Editorial
2016	Efficient simulation of EUV pellicles Evanschitzky, Peter; Erdmann, Andreas	Vortrag Presentation
2016	Automated source/mask/directed self-assembly optimization using a self-adaptive hierarchical modeling approach Fühner, T.; Michalak, P.; Wu, X.; Erdmann, A.	Konferenzbeitrag Conference Paper
2015	Application of principal component analysis to EUV multilayer defect printing Xu, D.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2015	Mask-induced best-focus-shifts in DUV and EUV lithography Erdmann, A.; Evanschitzky, P.; Neumann, J.T.; Gräupner, P.	Konferenzbeitrag Conference Paper
2015	Optical and EUV projection lithography: A computational view Erdmann, A.; Fühner, T.; Evanschitzky, P.; Agudelo, V.; Freund, C.; Michalak, P.; Xu, D.B.	Zeitschriftenaufsatz Journal Article
2015	Application of the transport of intensity equation to EUV multilayer defect analysis Xu, D.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2015	Continuation of scaling with optical and complementary lithography. Editorial Lai, K.F.; Erdmann, A.	Editorial
2015	Introduction to the special issue on optical lithography Erdmann, A.; Shibuya, M.	Zeitschriftenaufsatz Journal Article
2014	Advances in lithography: Introduction to the feature. Editorial Erdmann, A.; Liang, R.G.; Sezginer, A.; Smith, B.	Editorial
2014	Application of artificial neural networks to compact mask models in optical lithography simulation Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.	Zeitschriftenaufsatz Journal Article
2014	Pixel-based defect detection from high-NA optical projection images Xu, D.B.; Fühner, T.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2014	Aberration measurement technique based on an analytical linear model of a through-focus aerial image Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2014	Advances in lithography: Introduction to the feature. Editorial Erdmann, A.; Liang, R.G.; Sezginer, A.; Smith, B.	Editorial
2014	Challenges and opportunities for process modeling in the nanotechnology era Lorenz, J.K.; Baer, E.; Burenkov, A.; Erdmann, A.; Evanschitzky, P.; Pichler, P.	Zeitschriftenaufsatz Journal Article
2014	Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography Liu, Xiaolei; Wang, Xiangzhao; Li, Sikun; Yan, Guanyong; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2014	Lithographic process window optimization for mask aligner proximity lithography Voelkel, R.; Vogler, U.; Bramati, A.; Erdmann, A.; Ünal, N.; Hofmann, U.; Hennemeyer, M.; Zoberbier, R.; Nguyen, D.; Brugger, J.	Konferenzbeitrag Conference Paper
2014	Rigorous simulation and optimization of the lithography/directed self-assembly co-process Fühner, T.; Welling, U.; Müller, M.; Erdmann, A.	Konferenzbeitrag Conference Paper
2014	In situ aberration measurement method using a phase-shift ring mask Wang, X.; Li, S.; Yang, J.; Tang, F.; Yan, G.; Erdmann, A.	Konferenzbeitrag Conference Paper
2014	Fast rigorous model for mask spectrum simulation and analysis of mask shadowing effects in EUV lithography Liu, X.; Wang, X.; Li, S.; Yan, G.; Erdmann, A.	Konferenzbeitrag Conference Paper
2014	A defocus measurement method for an in situ aberration measurement method using a phase-shift ring mask Li, S.; Wang, X.; Yang, J.; Tang, F.; Yan, G.; Erdmann, A.	Konferenzbeitrag Conference Paper
2013	Defect inspection and detection using optical image projection Xu, D.; Li, S.; Wang, X.; Erdmann, A.	Vortrag Presentation
2013	Efficient simulation of extreme ultraviolet multilayer defects with rigorous data base approach Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas	Zeitschriftenaufsatz Journal Article
2013	Modeling studies on alternative EUV mask concepts for higher NA Erdmann, A.; Fühner, T.; Evanschitzky, P.; Neumann, J.T.; Ruoff, J.; Gräupner, P.	Konferenzbeitrag Conference Paper
2013	Application of artificial neural networks to compact mask models in optical lithography simulation Agudelo, V.; Fühner, T.; Erdmann, A.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2013	In situ aberration measurement technique based on an aerial image with an optimized source Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Duan, L.; Bourov, A.Y.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2013	Adaptive denoising method to improve aberration measurement performance Yang, J.; Wang, X.; Li, S.; Duan, L.; Bourov, A.Y.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2013	Defect parameters retrieval based on optical projection images Xu, D.; Li, S.; Wang, X.; Fühner, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2013	Modeling strategies for EUV mask multilayer defect dispositioning and repair Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheere, R.	Konferenzbeitrag Conference Paper
2013	High-order aberration measurement technique based on quadratic Zernike model with optimized source Yang, J.; Wang, X.; Li, S.; Duan, L.; Yan, G.; Xu, D.; Bourov, A.Y.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2013	Source mask optimization using real-coded genetic algorithms Yang, C.; Wang, X.; Li, S.; Erdmann, A.	Konferenzbeitrag Conference Paper
2012	Advanced mask aligner lithography (AMALITH) Völkel, R.; Vogler, U.; Bramati, A.; Weichelt, T.; Stürzebecher, L.; Zeitner, U.D.; Motzek, K.; Erdmann, A.; Hornung, M.; Zoberbier, R.	Konferenzbeitrag Conference Paper
2012	Simulation of 3D inclined/rotated UV lithography and its application to microneedles Liu, S.; Roeder, G.; Aygun, G.; Motzek, K.; Evanschitzky, P.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2012	Resist properties required for 6.67 nm extreme ultraviolet lithography Kozawa, T.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2012	In-situ aberration measurement technique based on aerial image with optimized source Yan, G.; Wang, X.; Li, S.; Yang, J.; Xu, D.; Duan, L.; Bourov, A.Y.; Erdmann, A.	Konferenzbeitrag Conference Paper
2012	Mask aligner lithography simulation - From lithography simulation to process validation Motzek, K.; Partel, S.; Bramati, A.; Hofmann, U.; Unal, N.; Hennemeyer, M.; Hornung, M.; Heindl, A.; Ruhland, M.; Erdmann, A.; Hudek, P.	Zeitschriftenaufsatz Journal Article
2012	Mutual source, mask and projector pupil optimization Fühner, T.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2012	Influence of two typical defects on the near-field optical properties of multilayer dielectric compression gratings Jin, Y.X.; Guan, H.Y.; Kong, F.Y.; Wang, J.P.; Erdmann, A.; Liu, S.J.; Du, Y.; Shao, J.D.; He, H.B.; Yi, K.	Zeitschriftenaufsatz Journal Article
2012	Imaging characteristics of binary and phase shift masks for EUV projection lithography Erdmann, A.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2012	In situ aberration measurement technique based on quadratic Zernike model Yang, J.; Wang, X.; Li, S.; Duan, L.; Yan, G.; Xu, D.; Bourov, A.Y.; Erdmann, A.	Konferenzbeitrag Conference Paper
2012	Efficient simulation of EUV multilayer defects with rigorous data base approach Evanschitzky, Peter; Shao, Feng; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2012	Rigorous electromagnetic field simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Zeitschriftenaufsatz Journal Article
2012	Analysis of EUV mask multilayer defect printing characteristics Erdmann, A.; Evanschitzky, P.; Bret, T.; Jonckheerec, R.	Konferenzbeitrag Conference Paper
2012	Resonant metamaterials for contrast enhancement in optical lithography Dobmann, S.; Shyroki, D.; Banzer, P.; Erdmann, A.; Peschel, U.	Zeitschriftenaufsatz Journal Article
2012	Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.	Konferenzbeitrag Conference Paper
2011	Modellierung und Simulation bei Mask Aligner Lithographie (Source-Mask Optimization) Vogler, U.; Bramati, A.; Völkel, R.; Hornung, M.; Zoberbier, R.; Motzek, M.; Erdmann, A.; Stürzebecher, L.; Zeitner, U.	Zeitschriftenaufsatz Journal Article
2011	Image simulation of projection systems in photolithography Evanschitzky, Peter; Fühner, Tim; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2011	Analytical model for EUV mask diffraction field calculation Cao, Y.; Wang, X.; Erdmann, A.; Bu, P.; Bu, Y.	Konferenzbeitrag Conference Paper
2011	Accuracy and performance of 3D mask models in optical projection lithography Agudelo, V.; Evanschitzky, P.; Erdmann, A.; Fühner, T.; Shao, F.; Limmer, S.; Fey, D.	Konferenzbeitrag Conference Paper
2011	Computational algorithms for optimizing mask layouts in proximity printing Motzek, K.; Vogler, U.; Hennemeyer, M.; Hornung, M.; Voelkel, R.; Erdmann, A.; Meliorisz, B.	Zeitschriftenaufsatz Journal Article
2011	Modeling of mask diffraction and projection imaging for advanced optical and EUV lithography Erdmann, A.; Shao, F.; Agudelo, V.; Fühner, T.; Evanschitzky, P.	Zeitschriftenaufsatz Journal Article
2011	Influence of geometry variations and defects on the near-field optical properties of pulsed compression gratings Wang, J.; Erdmann, A.; Liu, S.; Shao, J.; Jin, Y.; He, H.; Yi, K.	Konferenzbeitrag Conference Paper
2011	Predictive modeling of EUV-lithography: The role of mask, optics, and photoresist effects Erdmann, A.; Evanschitzky, P.; Shao, F.; Fühner, T.; Lorusso, G.; Hendrickx, E.; Goethals, A.M.; Jonckheere, R.; Bret, T.; Hofmann, T.	Konferenzbeitrag Conference Paper
2011	Innovations in structured thin film design and fabrication for optical applications Qi, H.; Wang, J.; Erdmann, A.; Jin, Y.; Shao, J.; Fan, Z.	Konferenzbeitrag Conference Paper
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, O.H.; Evanschitzky, P.; Erdmann, A.; Bär, E.; Lorenz, J.	Konferenzbeitrag Conference Paper
2011	Compensation of mask induced aberrations by projector wavefront control Evanschitzky, Peter; Shao, Feng; Fühner, Tim; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2011	Determination of the dill parameters of thick positive resist for use in modeling applications Roeder, G.; Liu, S.; Aygun, G.; Evanschitzky, P.; Erdmann, A.; Schellenberger, M.; Pfitzner, L.	Konferenzbeitrag Conference Paper
2011	Rigorous EMF simulation of the impact of photomask line-edge and line-width roughness on lithographic processes Rudolph, Oliver; Evanschitzky, Peter; Erdmann, Andreas; Bär, Eberhard; Lorenz, Jürgen	Poster
2011	Numerical optimization of illumination and mask layout for the enlargement of process windows and for the control of photoresist profiles in proximity printing Motzek, Kristian; Partel, Stefan; Vogler, Uwe; Erdmann, Andreas	Konferenzbeitrag Conference Paper
2011	Feasibility study of chemically amplified resists for short wavelength extreme ultraviolet lithography Kozawa, T.; Erdmann, A.	Zeitschriftenaufsatz Journal Article

Diese Liste ist ein Auszug aus der Publikationsplattform Fraunhofer-Publica

This list has been generated from the publication platform Fraunhofer-Publica

Jahr Year	Titel/Autor:in Title/Author	Publikationstyp Publication Type
2010	Extraordinary low transmission of a metamaterial for application in lithography Dobmann, S.; Ploss, D.; Reibold, D.; Erdmann, A.; Peschel, U.	Konferenzbeitrag Conference Paper
2010	Topography-aware BARC optimization for double patterning Liu, S.; Fühner, T.; Shao, F.; Barenbaum, A.; Jahn, J.; Erdmann, A.	Konferenzbeitrag Conference Paper
2010	Optimization of illumination pupils and mask structures for proximity printing Motzek, K.; Bich, A.; Erdmann, A.; Hornung, M.; Hennemeyer, M.; Meliorisz, B.; Hofmann, U.; Ünal, N.; Völkel, R.; Partel, S.; Hudek, P.	Konferenzbeitrag Conference Paper
2010	Rigorous EMF simulation of absorber shape variations and their impact on lithographic processes Rahimi, Z.; Erdmann, A.; Evanschitzky, P.; Pflaum, C.	Konferenzbeitrag Conference Paper
2010	Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes Erdmann, A.; Shao, F.; Fuhrmann, J.; Fiebach, A.; Patsis, G.P.; Trefonas, P.	Konferenzbeitrag Conference Paper
2010	Mask diffraction analysis and optimization for extreme ultraviolet masks Erdmann, A.; Evanschitzky, P.; Fühner, T.	Zeitschriftenaufsatz Journal Article
2010	Characterization of the scattering effect of complex mask geometries with surface roughness Rahimi, Z.; Erdmann, A.; Pflaum, C.	Konferenzbeitrag Conference Paper
2010	Efficient simulation of three-dimensional EUV masks for rigorous source mask optimization and mask induced imaging artifact analysis Evanschitzky, P.; Fühner, T.; Shao, F.; Erdmann, A.	Konferenzbeitrag Conference Paper
2010	Acid diffusion effects between resists in freezing processes used for contact hole patterning Fuhrmann, J.; Fiebach, A.; Erdmann, A.; Trefonas, P.	Konferenzbeitrag Conference Paper
2010	Modeling of exploration of reversible contrast enhacement layers for double exposure lithography Shao, F.; Cooper, G.D.; Chen, Z.; Erdmann, A.	Konferenzbeitrag Conference Paper
2010	Mask-topography-induced phase effects and wave aberrations in optical and extreme ultraviolet lithography Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.	Konferenzbeitrag Conference Paper
2010	Fast and highly accurate simulation of the printing behavior of EUV multilayer defects based on different models Shao, F.; Evanschitzky, P.; Motzek, K.; Erdmann, A.	Konferenzbeitrag Conference Paper
2010	Mask and wafer topography effects in optical and EUV-lithography Erdmann, A.; Shao, F.; Evanschitzky, P.; Fühner, T.	Konferenzbeitrag Conference Paper
2009	Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2009	Extraordinary low transmission effects for ultra-thin patterned metal films Reibold, D.; Shao, F.; Erdmann, A.; Peschel, U.	Zeitschriftenaufsatz Journal Article
2009	Lithography simulation: Modeling techniques and selected applications Erdmann, A.; Fühner, T.; Shao, F.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2009	Lithographic importance of base diffusion in chemically amplified photoresists Schnattinger, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2009	Rigorous diffraction simulations of topographic wafer stacks in double patterning Feng, S.; Evanschitzky, P.; Fühner, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2009	A model of self-limiting residual acid diffusion for pattern doubling Fuhrmann, J.; Fiebach, A.; Uhle, M.; Erdmann, A.; Szmanda, C.R.; Truong, C.	Konferenzbeitrag Conference Paper
2009	Efficient simulation and optimization of wafer topographies in double patterning Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2009	Mask diffraction analysis and optimization for EUV masks Erdmann, A.; Evanschitzky, P.; Fühner, T.	Konferenzbeitrag Conference Paper
2009	Exploration of linear and non-linear double exposure techniques by simulation Petersen, J.S.; Greenway, R.T.; Fühner, T.; Evanschitzky, P.; Shao, F.; Erdmann, A.	Konferenzbeitrag Conference Paper
2009	Efficient analysis of three dimensional EUV mask imaging artifacts using the waveguide decomposition method Shao, F.; Evanschitzky, P.; Fühner, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2009	Finite Integration (FI) method for modelling optical waves in lithography masks Rahimi, Z.; Erdmann, A.; Pflaum, C.	Konferenzbeitrag Conference Paper
2009	Extended Abbe approach for fast and accurate lithography imaging simulations Evanschitzky, P.; Erdmann, A.; Fühner, T.	Konferenzbeitrag Conference Paper
2009	Advanced lithography models for strict process control in the 32 nm technology node Patsis, G.P.; Drygiannakis, D.; Raptis, I.; Gogolides, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Photomasks for semiconductor lithography: From simple shadow casters to complex 3D scattering objects Erdmann, A.; Reibold, D.; Fühner, T.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2008	Increasing the predictability of AIMSTM measurements by coupling to resist simulations Meliorisz, B.; Erdmann, A.; Schnattinger, T.; Strößner, U.; Scherübl, T.; Bisschop, P. de; Philipsen, V.	Konferenzbeitrag Conference Paper
2008	A simulation study on the impact of lithographic process variations on CMOS device performance Fühner, T.; Kampen, C.; Kodrasi, I.; Burenkov, A.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	On the stability of fully depleted SOI MOSFETs under lithography process variations Kampen, C.; Fühner, T.; Burenkov, A.; Erdmann, A.; Lorenz, J.; Ryssel, H.	Konferenzbeitrag Conference Paper
2008	Optimization of mask absorber stacks and illumination settings for contact hole imaging Erdmann, A.; Fühner, T.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2008	Fast rigorous simulation of mask diffraction using the waveguide method with parallelized decomposition technique Shao, F.; Evanschitzky, P.; Reibold, D.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Investigation of high-resolution contact printing Meliorisz, B.; Partel, S.; Schnattinger, T.; Fühner, T.; Erdmann, A.; Hudek, P.	Konferenzbeitrag Conference Paper
2008	A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography Schnattinger, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios Erdmann, A.; Evanschitzky, P.; Fühner, T.; Schnattinger, T.; Xu, C.B.; Szmanda, C.	Konferenzbeitrag Conference Paper
2008	Benchmark of rigorous methods for electromagnetic field simulations Burger, S.; Zschiedrich, L.; Schmidt, F.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2008	Simulation-based EUV source and mask optimization Fühner, T.; Erdmann, A.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2007	Rigorous electromagnetic field mask modeling and related lithographic effects in the low k(1) and ultrahigh numerical aperture regime Erdmann, A.; Evanschitzky, P.	Zeitschriftenaufsatz Journal Article
2007	Memetic algorithms: Parametric optimization for microlithography Dürr, C.; Fühner, T.; Tollkühn, B.; Erdmann, A.; Kokai, G.	Aufsatz in Buch Book Article
2007	Dr.LiTHO - a development and research lithography simulator Fühner, T.; Schnattinger, T.; Ardelean, G.; Erdmann, A.	Konferenzbeitrag Conference Paper
2007	The impact of the mask stack and its optical parameters on the imaging performance Erdmann, A.; Fühner, T.; Seifert, S.; Popp, S.; Evanschitzky, P.	Konferenzbeitrag Conference Paper
2007	Direct optimization approach for lithographic process conditions Fühner, T.; Erdmann, A.; Seifert, S.	Zeitschriftenaufsatz Journal Article
2007	Fast near field simulation of optical and EUV masks using the waveguide method Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2007	Impact of alternative mask stacks on the imaging performance at NA 1.20 and above Philipsen, V.; Mesuda, K.; Bisschop, P. de; Erdmann, A.; Citarella, G.; Evanschitzky, P.; Birkner, R.; Richter, R.; Scherübl, T.	Konferenzbeitrag Conference Paper
2007	Simulation of larger mask areas using the waveguide method with fast decomposition technique Evanschitzky, P.; Shao, F.; Erdmann, A.; Reibold, D.	Konferenzbeitrag Conference Paper
2007	Simulation of proximity and contact lithography Meliorisz, B.; Evanschitzky, P.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2007	Simulation of mask proximity printing Meliorisz, B.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2006	Rigorous mask modelling beyond the hopkins approach Schermer, J.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Rigorous mask modeling beyond the Hopkins approach Schermer, J.; Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	A fast development simulation algorithm for discrete resist models Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Benchmark of a lithography simulation tool for next generation applications Tollkühn, B.; Uhle, M.; Fuhrmann, J.; Gärtner, K.; Heubner, A.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Efficient optimization of lithographic process conditions using a distributed, combined global/local search approach Fühner, T.; Popp, S.; Dürr, C.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Mesoscopic resist processing simulation in optical lithography Schnattinger, T.; Bär, E.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Three-dimensional resist development simulation with discrete models Schnattinger, T.; Baer, E.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2006	Accurate extraction of maximum current densities from the layout Seidl, A.; Schnattinger, T.; Erdmann, A.; Hartmann, H.; Petrashenko, A.	Konferenzbeitrag Conference Paper
2006	Defect printability study using EUV lithography Holfeld, C.; Bubke, K.; Lehmann, F.; La Fontaine, B.; Pawloski, A.R.; Schwarzl, S.; Kamm, F.M.; Graf, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2006	Mask defect printing mechanisms for future lithography generations Erdmann, A.; Graf, T.; Bubke, K.; Höllein, I.; Teuber, S.	Konferenzbeitrag Conference Paper
2006	Validity of the Hopkins approximation in simulations of hyper-NA (NA>1) line-space structures for an attenuated PSM mask Erdmann, A.; Citarella, G.; Evanschitzky, P.; Schermer, H.; Philipsen, V.; Bisschop, P. de	Konferenzbeitrag Conference Paper
2006	Rigorous mask modeling using waveguide and FDTD methods. An assessment for typical hyper NA imaging problems Erdmann, A.; Evanschitzky, P.; Citarella, G.; Fühner, T.; Bisschop, P. de	Konferenzbeitrag Conference Paper
2005	Mask modeling in the low k(1) and ultrahigh NA regime: Phase and polarization effects Erdmann, A.	Konferenzbeitrag Conference Paper
2005	Modeling and simulation Erdmann, A.	Aufsatz in Buch Book Article
2005	Improved mask and source representations for automatic optimization of lithographic process conditions using a genetic algorithm Fühner, T.; Erdmann, A.	Konferenzbeitrag Conference Paper
2005	Simulation of the effect of a resist-surface bound air bubble on imaging in immersion lithography Bisschop, P. de; Erdmann, A.; Rathsfeld, A.	Konferenzbeitrag Conference Paper
2005	Mask modeling in the low k1 and ultrahigh NA regime: phase and polarization effects Erdmann, A.	Konferenzbeitrag Conference Paper
2005	Mask and wafer topography effects in immersion lithography Erdmann, A.; Evanschitzky, P.; Bisschop, P. de	Konferenzbeitrag Conference Paper
2005	Simplified resist models for efficient simulation of contact holes and line ends Tollkühn, B.; Erdmann, A.; Semmler, A.; Nölscher, C.	Konferenzbeitrag Conference Paper
2005	Three dimensional EUV simulations: a new mask near field and imaging simulation system Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2005	Correlation analysis: A fast and reliable method for a better understanding of simulation models in optical lithography Tollkühn, B.; Heubner, A.; Elian, K.; Ruppenstein, B.; Erdmann, A.	Konferenzbeitrag Conference Paper
2005	Aerial image analysis for defective masks in optical lithography Graf, T.; Erdmann, A.; Evanschitzky, P.; Tollkühn, B.; Eggers, K.; Ziebold, R.; Teuber, S.; Höllein, I.	Konferenzbeitrag Conference Paper
2004	Verfahren zur Bestimmung von Strukturparametern einer Oberflaeche Weidner, A.; Erdmann, A.; Schneider, C.	Patent
2004	Genetic algorithms to improve mask and illumination geometries in lithographic imaging systems Fühner, T.; Erdmann, A.; Farkas, R.; Tollkühn, B.; Kokai, G.	Konferenzbeitrag Conference Paper
2004	Genetic algorithm for optimization and calibration in process simulation Fühner, T.; Erdmann, A.; Ortiz, C.J.; Lorenz, J.	Konferenzbeitrag Conference Paper
2004	Simulation is essential to successful design of modern semiconductors Erdmann, A.	Zeitschriftenaufsatz Journal Article
2004	Enhanced model for the efficient 2D and 3D simulation of defective EUV masks Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2004	Genetic algorithms for geometry optimization in lithographic imaging systems Fühner, T.; Erdmann, A.; Schnattinger, T.	Konferenzbeitrag Conference Paper
2004	Do we need complex resist models for predictive simulation of lithographic process performance? Tollkühn, B.; Erdmann, A.; Lammers, J.; Nolscher, C.; Semmler, A.	Konferenzbeitrag Conference Paper
2004	Process optimization using lithography simulation Erdmann, A.	Konferenzbeitrag Conference Paper
2004	Towards automatic mask and source optimization for optical lithography Erdmann, A.; Fühner, T.; Schnattinger, T.; Tollkühn, B.	Konferenzbeitrag Conference Paper
2004	The impact of EUV mask defects on lithographic process performance Evanschitzky, P.; Erdmann, A.	Konferenzbeitrag Conference Paper
2003	Optical lithography for future technology generations Erdmann, A.	Zeitschriftenaufsatz Journal Article
2003	EUV mask simulation for AIMS Windpassinger, R.; Rosenkranz, N.; Scherübl, T.; Evanschitzky, P.; Erdmann, A.; Zibold, A.	Konferenzbeitrag Conference Paper
2003	Rigorous simulation of defective EUV multilayer masks Sambale, C.; Schmöller, T.; Erdmann, A.; Evanschitzky, P.; Kalus, C.	Konferenzbeitrag Conference Paper
2003	New models for the simulation of post-exposure bake of chemically amplified resist Matiut, D.; Erdmann, A.; Tollkühn, B.; Semmler, A.	Konferenzbeitrag Conference Paper
2003	Rigorous simulation of alignment for microlithography Nikolaev, N.I.; Erdmann, A.	Zeitschriftenaufsatz Journal Article
2003	Mask and source optimization for lithographic imaging systems Erdmann, A.; Farkas, R.; Fühner, T.; Tollkühn, B.; Kokai, G.	Konferenzbeitrag Conference Paper
2003	Rigorous simulation of exposure over nonplanar wafers Erdmann, A.; Kalus, C.K.; Schmöller, T.; Klyonova, Y.; Sato, T.; Endo, A.; Shibata, T.; Kobayashi, Y.	Konferenzbeitrag Conference Paper
2003	Will Darwin's law help us to improve our resist models? Tollkühn, B.; Fühner, T.; Matiut, D.; Erdmann, A.; Semmler, A.; Kuchler, B.; Kokai, B.	Konferenzbeitrag Conference Paper
2003	Simulation of extreme ultraviolet masks with defective multilayers Evanschitzky, P.; Erdmann, A.; Besacier, M.; Schiavone, P.	Konferenzbeitrag Conference Paper
2003	Efficient simulation of light diffraction from 3-dimensional EUV-masks using field decomposition techniques Erdmann, A.; Kalus, C.K.; Schmöller, T.; Wolter, A.	Konferenzbeitrag Conference Paper
2002	Herstellung von optisch abgebildeten Strukturen mit einer Phasenschiebung von transmittierten Lichtanteilen Erdmann, A.; Vial, A.	Patent
2002	New methods to calibrate simulation parameters for chemically amplified resists Tollkuehn, B.; Erdmann, A.; Kivel, N.; Robertson, S.A.; Kang, D.; Hansen, S.G.; Fumar, P.A.; Tsann, B.C.; Hoppe, W.	Konferenzbeitrag Conference Paper
2002	Enhancements in rigorous simulation of light diffraction from phase-shift masks Erdmann, A.; Kachwala, N.	Konferenzbeitrag Conference Paper
2002	Modification of boundaries conditions in the FDTD algorithm for EUV masks modeling Vial, A.; Erdmann, A.; Schmoeller, T.; Kalus, C.	Konferenzbeitrag Conference Paper
2001	Effect of copper on the breakthrough voltage of Poly-Si - Poly-Si capacitors Boehringer, M.; Pillion, J.E.; Erdmann, V.; Rygula, M.; Winz, K.; Brauchle, P.; Aquino, D.; Zhang, H.; Zahka, J.; Zielonka, G.; Hauber, J.	Konferenzbeitrag Conference Paper
2001	Optical simulation of 3D Mask effects Rosenbusch, A.; Erdmann, A.; Friedrich, C.	Zeitschriftenaufsatz Journal Article
2001	Benchmarking of available rigorous electromagnetic field (EMF) simulators for phase-shift mask applications Kalus, C.; List, S.; Erdmann, A.; Gordon, R.; McCallum, M.; Semmler, A.	Zeitschriftenaufsatz Journal Article
2001	3D-electromagnetic field simulation for Low-k1 lithography applications Erdmann, A.; Gordon, R.; McCallum, M.; Rosenbusch, A.	Zeitschriftenaufsatz Journal Article
2001	Trace analysis for 300 mm wafers and processes with total- reflection x-ray-fluorescence Nutsch, A.; Erdmann, V.; Zielonka, G.; Pfitzner, L.; Ryssel, H.	Zeitschriftenaufsatz Journal Article
2001	Comparison of simulation approaches for chemically amplified resists Erdmann, A.; Henke, W.; Robertson, S.; Richter, E.; Tollkühn, B.; Hoppe, W.	Konferenzbeitrag Conference Paper
2001	Topography effects and wave aberrations in advanced PSM technology Erdmann, A.	Konferenzbeitrag Conference Paper

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