SISPAD 2026

SISPAD provides an international forum for the presentation of leading-edge research and development results in the area of process and device simulation. SISPAD is one of the longest-running conferences devoted to technology computer-aided design (TCAD) and advanced modeling of novel semiconductor devices and nano electronic structures.

In the Fraunhofer IISB presentation

Multi-phase-field Modeling of Thin-film Silicidation

by C. Pixius et al.

we apply a new model based on the multi-phase-field method to simulate the evolution of thin silicide layers during high-temperature annealing in semiconductor processing.

We are looking forward to seeing you in Kumamoto!