SiC Services

Custom-tailored SiC Services with One-stop Solutions from Material to System

Drawing on 20 years of cooperation with partners from SiC industry and research, Fraunhofer IISB has been established as Germany‘s hotspot for silicon carbide power device manufacturing on a 150 mm SiC line. Our mission is to share our many years of experience with the customers and to provide them with distinct SiC power device prototypes for newly arising markets.  We are currently ramping up our 200 mm SiC line - many tools and processes are ready and technological gaps will be closed soon.

4H-SiC is the ideal semiconductor for the realization of high-voltage and high-power electronic devices due to its outstanding material properties. With SiC services as a crosscut topic of the departments of Fraunhofer IISB and in close collaboration with the in-house brand π-Fab, we offer R&D services ranging from material development and prototype devices to module assembly and mechatronic systems.

Core competences

  • Simulation and modeling
  • Homoepitaxy and defect engineering
  • Device and circuit design
  • Full power device manufacturing
  • Wafer thinning and packaging
  • Device characterization

SiC power device prototypes

  • Diodes (SBD, PIN, MPS)
  • MOSFETs (planar, trench)
  • Specific devices (bipolar, CMOS, sensor)
  • Industry collaboration towards qualified high-volume foundries


  • Hybrid electric vehicles and electric vehicles
  • Renewable energies (wind, solar)
  • Power grid

SiC Materials

Development and optimization of SiC epitaxy processes


We develop SiC epitaxy processes with emphasis on improved material quality. State of the art metrology tools such as UV-PL or XRT together with the possibility to process complete devices allows us to correlate the properties of the epilayer and the substrate with electrical device parameters. Based on the findings, solutions are developed that allow one to overcome harmful defects. Process development is supported by the simulation of fluid dynamics, heat transfer, species transport, and chemical reactions with tailored CFD software.

In addition, the potential of SiC and diamond for quantum applications is explored. In particular, we investigate how color centers in SiC and diamond can be generated.

SiC Devices

One-stop solutions for development and prototype fabrication of SiC devices

Our SiC device activities provide one-stop solutions for development and prototype fabrication of SiC devices, circuits and systems. IISB is operating a complete 150 mm SiC process line for implementation of its prototype fabrication technologies. We offer a broad range of device-related services including proof-of-concept for new device concepts, technology development for device improvements, and small-volume fabrication for small and medium-sized enterprises. Continuous progress in TCAD process and device modeling augments the device development and helps to reduce time-to-market for our partners.

© Kurt Fuchs / Fraunhofer IISB

SiC Device Fabrication at Fraunhofer IISB

Tobias Erlbacher, head of the Semiconductor Devices department explains, how the entire value chain from materials to power electronic systems is covered by the research and development activities of Fraunhofer IISB. Our 150 mm SiC pilot process line, which is unique in Europe, allows us to study and optimize manufacturing technologies for the realization of highly demanded power devices.

SiC Packaging

Packaging solutions addressing the benefits of SiC devices

Fraunhofer IISB offers a wide variety of packaging solutions for wide band gap devices, particularly for SiC. The solutions we provide address the main benefits of our devices, such as high switching speed, high switching frequency, high blocking voltage, and high temperature operation. Our packaging lab offers different technologies from experimental-state and single devices up to small-volume production of multichip modules. For our packed devices, full electrical characterization as well as lifetime evaluation and modelling are available.