SiC Power Module Development Platform

SiC CMOS Devices

Our high-temperature SiC CMOS platform provides a dedicated technology basis for integrated circuits and smart sensor functions in harsh environments. The 2 µm process line is available for multiproject wafer runs, giving research groups and SMEs efficient access to SiC CMOS prototyping without requiring a full wafer lot (-> Europractice). The technology supports full CMOS implementation with a 3 µm channel length and enables application-specific MOSFET layouts for high drive currents. In addition to analog and digital circuit functions, temperature and UV sensors can be integrated monolithically, while lateral power transistors based on RESURF concepts extend the platform toward smart-power solutions. Circuit operation has been demonstrated up to 550 °C, and wafer-scale functional testing is available up to 600 °C.

SiC VDMOS Power Devices

On this technology platform, development and fabrication of SiC VDMOS power devices are addressed as a key building block for next-generation power electronics. Activities include the development of robust 1200 V chip solutions that combine high blocking capability with stable and predictable electrical behavior over an extended temperature range. By linking device design, process development, and electrical characterization, the platform supports the realization of SiC power devices tailored for reliable operation in demanding power-electronic applications, including environments with elevated thermal stress and stringent efficiency requirements.

High Temperature Capability

For SiC power devices intended for high-temperature operation, the metallization system becomes a key reliability factor. Conventional aluminum-based metal systems are increasingly limited under sustained thermal load, temperature cycling, and harsh ambient conditions. To address these requirements, platinum- and tantalum-based metallization concepts are adopted and further developed as thermally stable contact and interconnect solutions. In combination with suitable passivation and assembly technologies, these material systems support a robust pathway toward SiC power electronics for applications in which conventional module technologies reach their performance and long term reliability limits.

We combine commercial simulation software with our proprietary in-house calibration and optimization tools for precise modelling and characterization of semiconductor devices.

Within the SiC Power Module Development Platform, our research focuses on the following topics:

• Process simulation
• Simulation of 2D and 3D systems and devices
• Temperature-consistent modelling from 25 °C to 400 °C
• Single- and multi-temperature fitting of measured characteristics
• Accurate material parameter prediction such as (interface) trap density and fixed charges

These capabilities allow us to develop reliable semiconductor solutions for applications with challenging operating conditions.

We enable temperature-consistent simulation and calibration of vertical MOS transistors (upper figure) from 25 °C to 400 °C with a single parameter set, as shown in the lower figure.

The platform enables variable internal module layouts for IISB reference devices as well as customer-specific SiC or GaN chips, while fixed external outlines support fast and cost-efficient prototype realization.

The module architecture supports multichip designs, half-bridge configurations, and advanced multi-layer concepts. An optional second layer allows the integration of high-temperature SiC gate-driver ICs and additional module functions such as temperature sensing, RC snubbers, DESAT (desaturation) detection, or signal routing.

All key assembly technologies are available on-site, including sintering and soldering, wire and ribbon bonding, top-side clip sintering, ultrasonic welding of terminals, leadframe integration, and transfer molding. This in-house technology chain enables rapid iteration from module design to functional prototypes, followed by electrical characterization and reliability testing.