Device Characterization_new

The continuous reduction in product development times and the high cost pressure place special challenges for the developers of power electronic systems. In an early project stage, the optimal selection of the active or passive components saves time and costs. With our comprehensive test facilities, we evaluate the potential of new technologies for your application in close coordination with you. We also offer you to convert these measurements into powerful simulation models for your virtual prototype.

Fields of Research

  • Static and dynamic characterization of power semiconductors & modules
  • Characterization of inducitve components under real conditions
  • Creation of application-related simulation models

Modul Design

  • Modeling for the geometrical detection of the power module Creo
  • Analysis / simulation for the extraction of the feed characteristics ANSYS Q3D
  • Characterization of the individual switches with Curve-Tracer (Keysight B1505A)
  • Validation of the static characteristic of the complete module with impedance analyzer (Agilent 4294A)
  • Test / Validation switching behavior complete module

Static Device Characterization

The static characteristics of a power semiconductor or module are the basic prerequisites for the development of a power electronic system.


However, the measurement conditions in the data sheet often differ from the target application or there is still no detailed data at all.

Fields of Research

  • Exploration the potential of WBG power semiconductor devices through perfectly matched performance modules
  • Identification of the influencing factors beased on detailed knowledge of the interactions on module and switch level
  • Conclusion on the behavior of the power module by characterizing the individual switches as well as the modeling of electrical properties of the leads



  • Semiconductor and module measurement up to 3,3 kV, 1500A and in the range of -40 – + 600 °C
  • Application-related characterization of the components
  • Free parameter selection and thus generation of measurement results compatible with existing databases
  • Creation of data sheets and capable simulation models

Dynamic Device Characterization

“A new era begins,” “lowest losses,” “Ultra fast switching,” “50 MHz switching frequency,” “10 x higher power density”  

That’s the current opinion of novel SiC and GaN power devices.

We are your manufacturer-independent partner for device evaluation and power semiconductor modelling for virtual prototyping.


Get to know the real benefits of using SiC and GaN in your systems.

Fields of Research and Services

  • Power semiconductor benchmarks
  • Evaluation of novel devices in highly efficient power electronic systems
  • Device modelling for computer-based system optimization and virtual prototyping
  • Verification of measured and simulated device characteristics
  • Modelling of all application-related device characteristics



  • Highly dynamic switch and diode characterization up to 2000 V, 100 A, 250 °C
  • All kinds of packaged and bare die devices
  • Flexible gate drive for normally-on and off behavior
  • Extended features like switching energy, gate charge, on resistance, diode charge according to international standards
  • Ease of use automated documentation and numerical database generation for device modeling

Inductive Components Characterization

SiC and GaN power devices are enablers to increase power density or efficiency of next generation power electronic systems. However, inductive components might be a show stopper, as they make up a large space and involve huge costs in current systems.


You may ask yourself, where are the limits of inductive components regarding higher switching frequencies and power densities?

We are your partner, who evaluates and designs inductors and transformers for customized power electronic systems.

Fields of Research

  • Application-related component characterization
  • Performance Assessment of novel ferrite materials for power electronics
  • Component modeling for computer-aided system design
  • Improvement of the performance of the system - taking into account component losses, building space or weight



The values in the data sheets of the ferrite materials are often insufficient to design these powerful inductive components for a specific application.


That is why we offer standardized material measurements:

  • Material-specific losses with DC bias
  • Perviousness
  • Hysteresis
  • Saturation flow for different temperatures


At the component level, we perform the following measurements:

  • magnetic parameters (eg inductance, coupling, saturation current)
  • Power dissipation measurement for different temperatures and with large signal