A cross-organizational team from Rigaku SE and Fraunhofer IISB has established a new semicon-ductor material characterization method in their jointly operated Center of Expertise for X-ray Topography in Erlangen, Germany. They succeeded not only in developing an industry-ready X-ray topography system, but also in employing defect detection and quantification algorithms, achieving a worldwide unique material characterization method for silicon carbide (SiC) wafers. SiC is an excellent semiconductor for application areas like electric mobility and transportation, sustainable energy supply, industrial infrastructure up to sensors and quantum technologies even under harsh operating conditions. As representatives for the whole research team, Dr. Kranert and Dr. Reimann from Fraunhofer IISB and Dr. Hippler, Managing Director Rigaku Europe SE, have won the Georg Waeber Innovation Award 2023 from the Förderkreis für die Mikroelektronik e.V. (Microelectronics Promotion Society).
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