Fraunhofer Institute for Integrated Systems and Device Technology IISBCustomer-driven development and manufacturing of power semiconductor devices on silicon and silicon carbide. The services include modelling and design of devices, the improvement of existing manufacturing technology for their realization, the fabrication of prototype devices and the characterization regarding their electrical properties and their reliability.
Power Devices
Silicon carbide devices
The silicon carbide activities are dedicated towards both actively switched and rectifying power semiconductor devices for operating voltages of 600 V and beyond. The power devices on 4H-SiC offer low on-state losses, enabling higher switching frequencies than with silicon devices. Therefore, smaller and lighter systems (e.g. converters, inverters) can be manufactured.
Silicon devices
While silicon technology has been available for over 50 years, novel device concepts and device topologies are constantly evolving. This includes trench gate and superjunction concepts in power and RF MOSFETs or fast-switching diodes. Our activities are addressing customer-specific requirements for power semiconductor devices that cannot be readily satisfied with existing “off-the-shelf” devices.